Effects of laser wavelength and fluence on the growth of ZnO thin films by pulsed laser deposition

Transparent, electrically conductive and c-axis oriented ZnO thin films have been grown by the pulsed laser deposition (PLD) technique on silicon and Corning glass substrates employing either a KrF excimer laser (¿ = 248 nm) or a frequency-doubled Nd:YAG laser (¿ = 532 nm). The crystalline structure, surface morphology, optical and electrical properties of the deposited films were found to depend not only on the substrate temperature and oxygen partial pressure, but also on the irradiation conditions. The quality of the ZnO layers grown by the shorter wavelength laser was always better than that of the layers grown by the longer wavelength, under otherwise identical deposition conditions. This behaviour was qualitatively accounted for by the results of the numerical solution of a one-dimensional heat diffusion equation which indicated a strong superheating effect of the melted target material for the case of frequency-doubled Nd:YAG laser irradiations. By optimizing the deposition conditions we have grown, employing the KrF laser, very smooth c-axis oriented ZnO films having a full-width at half-maximum value of the (002) X-ray diffraction value less than 0.16° and optical transmittance around 85% in the visible region of the spectrum at a substrate temperature of only 300°C

Characteristics of high quality ZnO thin films deposited by pulsed laser deposition

This paper show that under optimized deposition condition, films can be grown having a full width at half maximum (FWHM) value of the (002) x-ray diffraction (XRD) line a factor of 4 smaller than the previously published results using PLD and among the best reported so far by any technique. Under optimized conditions, c-axis oriented ZnO films having a FWHM value of the (002) XRD reflection line less than 15°, electrical resistivities around 5 × 10-2 Ω cm and optical transmittance higher than 85% in the visible region of the spectrum were obtained. Refractive index was around 1.98 and the Eg = 3.26 eV, values characteristic of very high quality ZnO thin films

Growth of ZnO thin films on GaAs by pulsed laser deposition

ZnO thin films have been grown on GaAs substrates using the pulsed laser deposition technique with or without a photodeposited SiO2 buffer layer. The presence of the SiO2 layer has a beneficial effect on the crystalline quality of the grown ZnO films. Highly c-axis oriented ZnO films having a full width at half maximum value of the (002) X-ray diffraction line of less than 0.13 ° have been grown on such buffer layers at a substrate temperature of only 350 °C

Optical Properties of Ar Ions Irradiated Nanocrystalline ZrC and ZrN Thin Films

Thin nanocrystalline ZrC and ZrN films (less than 400 nanometers), grown on (100) Si substrates at a substrate temperature of 500 degrees Centigrade by the pulsed laser deposition (PLD) technique, were irradiated by 800 kiloelectronvolts Ar ion irradiation with fluences from 1 times 10(sup 14) atoms per square centimeter up to 2 times 10(sup 15) atoms per square centimeter. Optical reflectance data, acquired from as-deposited and irradiated films, in the range of 500-50000 per centimeter (0.066 electronvolts), was used to assess the effect of irradiation on the optical and electronic properties. Both in ZrC and ZrN films we observed that irradiation affects the optical properties of the films mostly at low frequencies, which is dominated by the free carriers response. In both materials, we found a significant reduction in the free carriers scattering rate, i.e. possible increase in mobility, at higher irradiation flux. This is consistent with our previous findings that irradiation affects the crystallite size and the micro-strain, but it does not induce major structural changes

Monitoring of Cell Layer Integrity with a Current-Driven Organic Electrochemical Transistor

The integrity of CaCo-2 cell barriers is investigated by organic electrochemical transistors (OECTs) in a current-driven configuration. Ion transport through cellular barriers via the paracellular pathway is modulated by tight junctions between adjacent cells. Rupturing its integrity by H2O2 is monitored by the change of the output voltage in the transfer characteristics. It is demonstrated that by operating the OECT in a current-driven configuration, the sensitive and temporal resolution for monitoring the cell barrier integrity is strongly enhanced as compared to the OECT transient response measurement. As a result, current-driven OECTs are useful tools to assess dynamic and critical changes in tight junctions, relevant for clinical applications as drug targeting and screening

Bulk Fermi surface and electronic properties of Cu0.07_{0.07}Bi2_{2}Se3_{3}

The electronic properties of Cu$_{0.07}$Bi$_{2}$Se$_{3}$ have been investigated using Shubnikov-de Haas and optical reflectance measurements. Quantum oscillations reveal a bulk, three-dimensional Fermi surface with anisotropy $k^{c}_{F}/k^{ab}_{F}\approx$ 2 and a modest increase in free-carrier concentration and in scattering rate with respect to the undoped Bi$_{2}$Se$_{3}$, also confirmed by reflectivity data. The effective mass is almost identical to that of Bi$_{2}$Se$_{3}$. Optical conductivity reveals a strong enhancement of the bound impurity bands with Cu addition, suggesting that a significant number of Cu atoms enter the interstitial sites between Bi and Se layers or may even substitute for Bi. This conclusion is also supported by X-ray diffraction measurements, where a significant increase of microstrain was found in Cu$_{0.07}$Bi$_{2}$Se$_{3}$, compared to Bi$_{2}$Se$_{3}$.Comment: Accepted to Phys. Rev B (R

Magneto-transport through graphene nano-ribbons

We investigate magneto-transport through graphene nano-ribbons as a function of gate and bias voltage, and temperature. We find that a magnetic field systematically leads to an increase of the conductance on a scale of a few tesla. This phenomenon is accompanied by a decrease in the energy scales associated to charging effects, and to hopping processes probed by temperature-dependent measurements. All the observations can be interpreted consistently in terms of strong-localization effects caused by the large disorder present, and exclude that the insulating state observed in nano-ribbons can be explained solely in terms of a true gap between valence and conduction band.Comment: 4 pages, 5 figure

Investigation of infrared phonon modes in multiferroic single-crystal FeTe2_{2}O5_{5}Br

Reflection and transmission as a function of temperature (5--300 K) have been measured on single crystals of the multiferroic compound FeTe$_{2}$O$_{5}$Br utilizing light spanning the far infrared to the visible portions of the electromagnetic spectrum. The complex dielectric function and optical properties were obtained via Kramers-Kronig analysis and by fits to a Drude-Lortentz model. Analysis of the anisotropic excitation spectra via Drude-Lorentz fitting and lattice dynamical calculations have lead to the observation of all 52 IR-active modes predicted in the $ac$ plane and 43 or the 53 modes predicted along the b axis of the monoclinic cell. Assignments to groups (clusters) of phonons have been made and trends within them are discussed in light of our calculated displacement patterns.Comment: 9 pages, 7 figure

Шеечная беременность: обзор литературы и клинический случай

USMF „Nicolae Testemiţanu”, Catedra Obstetrică şi Ginecologie FECMFCervical pregnancy is a rare form of ectopic pregnancy with an estimated incidence of 0.15-1% of all ectopic pregnancies. It is defined as the implantation of pregnancy in the cervix. Predisposing factors are previous abortion, previous caesarian, Asherman syndrome, exposure to DES, IVF, leiomyoma etc. Early detection by endovaginal ultrasound is desirable in order to plan management early and avoid serious and often life threatening complications. The management of a cervical pregnancy includes medical and surgical options. Medical options includes methotrexate therapy and intraamniotic administration of potassium chloride. Surgical options include uterine artery embolisation, dilatation, curettage and tamponade, hysterectomy. We report a case of cervical pregnancy of a 33-year-old woman with previous lower segment cesarean and two curettages, resulting in hysterectomyШеечная беременность является редкой разновидностью внематочной беременности с предполагаемой частотой 0,15-1% из всех внематочных беременностей и определяется как имплантация беременности в шейку матки. Предраспологающими факторами являются предшествующий аборт, кесарево сечение, синдром Ашермана, внутриматочные контрацептивние средства, ЭКО, лейомиома и т. д. Ранняя диагностика с помощью эндовагинальной УЗИ, желательно для раннего планирования лечения и для предотвращения серьезных и опасных для жизни осложнений. Лечение шеечной беременности включает медицинские и хирургические методы. Медицинские варианты включают терапию с метотрексатом и внутриматочное введение калия хлорид. Хирургические варианты включают эмболизацию маточной артерии, выскабливание и тампонаду, гистерэктомию. Мы представляем случай 33-летней пациентки с шеечной беременности, с кесаревым сечением и двумя выскабливаниями в анамнезе, которые закончился гистерэктомией