Electron and hole transmission through superconductor - normal metal interfaces

We have investigated the transmission of electrons and holes through interfaces between superconducting aluminum (Tc = 1.2 K) and various normal non-magnetic metals (copper, gold, palladium, platinum, and silver) using Andreev-reflection spectroscopy at T = 0.1 K. We analyzed the point contacts with the modified BTK theory that includes Dynes' lifetime as a fitting parameter G in addition to superconducting energy gap 2D and normal reflection described by Z. For contact areas from 1 nm^2 to 10000 nm^2 the BTK Z parameter was 0.5, corresponding to transmission coefficients of about 80 %, independent of the normal metal. The very small variation of Z indicates that the interfaces have a negligible dielectric tunneling barrier. Fermi surface mismatch does not account for the observed transmission coefficient.Comment: 9 pages, 4 figures, submitted to Proceedings of the 19th International Conference on Magnetism ICM2012 (Busan 2012

Spontaneous Spin Polarized Currents in Superconductor-Ferromagnetic Metal Heterostructures

We study a simple microscopic model for thin, ferromagnetic, metallic layers on semi-infinite bulk superconductor. We find that for certain values of the exchange spliting, on the ferromagnetic side, the ground states of such structures feature spontaneously induced spin polarized currents. Using a mean-field theory, which is selfconsistent with respect to the pairing amplitude $\chi$, spin polarization $\vec{m}$ and the spontaneous current $\vec{j}_s$, we show that not only there are Andreev bound states in the ferromagnet but when their energies $E_n$ are near zero they support spontaneous currents parallel to the ferromagnetic-superconducting interface. Moreover, we demonstrate that the spin-polarization of these currents depends sensitively on the band filling.Comment: 4 pages, 5 Postscript figures (included

Spin-polarized quasiparticle injection effects in YBCO thin films

We report detailed transport studies on ferromagnet-superconductor heterostructures. Epitaxial heterostructures of half-metal colossal magnetoresistive La2/3Ca1/3MnO3 (HM-CMR) and high Tc superconducting YBa2Cu3O7 (YBCO) are grown on SrTiO3 (100) single crystal substrates by pulsed laser deposition. Using the HM--CMR layer as source for spin-polarized quasiparticles, we show the effect of injection of spin-polarized quasiparticles into the ab-plane and along the c-axis of YBCO. The results show a drop in the ab-plane resistance Rab (T) in the case of injection along the c-axis that is discussed to be related to the opening of a pseudogap.Comment: 6 pages, 2 figure

Spintronics: Fundamentals and applications

Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.Comment: invited review, 36 figures, 900+ references; minor stylistic changes from the published versio

Cardiac resynchronization therapy guided by cardiovascular magnetic resonance

Cardiac resynchronization therapy (CRT) is an established treatment for patients with symptomatic heart failure, severely impaired left ventricular (LV) systolic dysfunction and a wide (> 120 ms) complex. As with any other treatment, the response to CRT is variable. The degree of pre-implant mechanical dyssynchrony, scar burden and scar localization to the vicinity of the LV pacing stimulus are known to influence response and outcome. In addition to its recognized role in the assessment of LV structure and function as well as myocardial scar, cardiovascular magnetic resonance (CMR) can be used to quantify global and regional LV dyssynchrony. This review focuses on the role of CMR in the assessment of patients undergoing CRT, with emphasis on risk stratification and LV lead deployment

2017 HRS/EHRA/ECAS/APHRS/SOLAECE expert consensus statement on catheter and surgical ablation of atrial fibrillation: executive summary.

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Semiconductor Spintronics

Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spindependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent nteraction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field.Comment: tutorial review; 342 pages, 132 figure