Electrical compensation and cation vacancies in Al rich Si-doped AlGaN

We report positron annihilation results on vacancy defects in Si-doped Al0.90Ga0.10N alloys grown by metalorganic vapor phase epitaxy. By combining room temperature and temperature-dependent Doppler broadening measurements, we identify negatively charged in-grown cation vacancies in the concentration range from below 1 x 10 16 cm(-3) to 2 x 10 18 cm(-3) in samples with a high C content, strongly correlated with the Si doping level in the samples ranging from 1 x 10 17 cm(-3) to 7 x 10 18 cm(-3). On the other hand, we find predominantly neutral cation vacancies with concentrations above 5 x 10 18 cm(-3) in samples with a low C content. The cation vacancies are important as compensating centers only in material with a high C content at high Si doping levels.Peer reviewe

A 6-12 GHz Analogue Lag-Correlator for Radio Interferometry

Aims: We describe a 6-12 GHz analogue correlator that has been developed for use in radio interferometers. Methods: We use a lag-correlator technique to synthesis eight complex spectral channels. Two schemes were considered for sampling the cross-correlation function, using either real or complex correlations, and we developed prototypes for both of them. We opted for the ``add and square'' detection scheme using Schottky diodes over the more commonly used active multipliers because the stability of the device is less critical. Results: We encountered an unexpected problem, in that there were errors in the lag spacings of up to ten percent of the unit spacing. To overcome this, we developed a calibration method using astronomical sources which corrects the effects of the non-uniform sampling as well as gain error and dispersion in the correlator.Comment: 14 pages, 21 figures, accepted for publication in A&

A 6-12 GHz Analogue Lag-Correlator for Radio Interferometry

Aims: We describe a 6-12 GHz analogue correlator that has been developed for use in radio interferometers. Methods: We use a lag-correlator technique to synthesis eight complex spectral channels. Two schemes were considered for sampling the cross-correlation function, using either real or complex correlations, and we developed prototypes for both of them. We opted for the ``add and square'' detection scheme using Schottky diodes over the more commonly used active multipliers because the stability of the device is less critical. Results: We encountered an unexpected problem, in that there were errors in the lag spacings of up to ten percent of the unit spacing. To overcome this, we developed a calibration method using astronomical sources which corrects the effects of the non-uniform sampling as well as gain error and dispersion in the correlator.Comment: 14 pages, 21 figures, accepted for publication in A&

Cosmological constraints from the cluster contribution to the power spectrum of the soft X-ray background. New evidence for a low sigma_8

We use the X-ray power spectrum of the ROSAT all-sky survey in the R6 band (approximately 0.9-1.3 keV) to set an upper limit on the galaxy cluster power spectrum. The cluster power spectrum is modelled with a minimum number of robust assumptions regarding the structure of the clusters. The power spectrum of ROSAT sets an upper limit on the Omega_m-sigma_8 plane which excludes all the models with sigma_8 above sigma_8 = 0.5/(Omega_m^0.38) in a flat LCDM universe. We discuss the possible sources of systematic errors in our conclusions, mainly dominated by the assumed L_x-T relation. Alternatively, this relation could be constrained by using the X-ray power spectrum, if the cosmological model is known. Our conclusions suggest that only models with a low value of sigma_8 (sigma_8 < 0.8 for Omega_m = 0.3) may be compatible with our upper limit. We also find that models predicting lower luminosities in galaxy clusters are favoured. Reconciling our cosmological constraints with these arising by other methods might require either a high entropy floor or wide-spread presence of cooling flows in the low-redshift clusters.Comment: 14 pages, 19 plots (2 as gif files). MNRAS submitte

Large Oligomeric Complex Structures Can Be Computationally Assembled by Efficiently Combining Docked Interfaces

Macromolecular oligomeric assemblies are involved in many biochemical processes of living organisms. The benefits of such assemblies in crowded cellular environments include increased reaction rates, efficient feedback regulation, cooperativity and protective functions. However, an atom‐level structural determination of large assemblies is challenging due to the size of the complex and the difference in binding affinities of the involved proteins. In this study, we propose a novel combinatorial greedy algorithm for assembling large oligomeric complexes from information on the approximate position of interaction interfaces of pairs of monomers in the complex. Prior information on complex symmetry is not required but rather the symmetry is inferred during assembly. We implement an efficient geometric score, the transformation match score, that bypasses the model ranking problems of state‐of‐the‐art scoring functions by scoring the similarity between the inferred dimers of the same monomer simultaneously with different binding partners in a (sub)complex with a set of pregenerated docking poses. We compiled a diverse benchmark set of 308 homo and heteromeric complexes containing 6 to 60 monomers. To explore the applicability of the method, we considered 48 sets of parameters and selected those three sets of parameters, for which the algorithm can correctly reconstruct the maximum number, namely 252 complexes (81.8%) in, at least one of the respective three runs. The crossvalidation coverage, that is, the mean fraction of correctly reconstructed benchmark complexes during crossvalidation, was 78.1%, which demonstrates the ability of the presented method to correctly reconstruct topology of a large variety of biological complexes. Proteins 2015; 83:1887–1899. © 2015 The Authors. Proteins: Structure, Function, and Bioinformatics Published by Wiley Periodicals, Inc

Low resistance n-contact for UVC LEDs by a two-step plasma etching process

The impact of plasma etching on the formation of low-resistance n-contacts on the AlGaN:Si current spreading layer during the chip fabrication of ultraviolet light-emitting diodes (UV LEDs) emitting at 265 nm is investigated. A two-step plasma etching process with a first rapid etching using BCl3/Cl2 gas mixture and a second slow etching step using pure Cl2 gas has been developed. The etching sequence provides smooth mesa side-walls and an n-AlGaN surface with reduced surface damage. Ohmic n-contacts with a contact resistivity of 3.5 10-4 Ωcm2 are obtained on Si-doped Al0.65Ga0.35N layers and the operating voltages of the UVC LEDs were reduced by 2 V for a current of 20 mA. © 2020 The Author(s). Published by IOP Publishing Ltd

Transition Rates between Mixed Symmetry States: First Measurement in 94Mo

The nucleus 94Mo was investigated using a powerful combination of gamma-singles photon scattering experiments and gamma-gamma-coincidence studies following the beta-decay of 94mTc. The data survey short-lived J^pi=1+,2+ states and include branching ratios, E2/M1 mixing ratios, lifetimes, and transition strengths. The mixed-symmetry (MS) 1+ scissors mode and the 2+ MS state are identified from M1 strengths. A gamma transition between MS states was observed and its rate was measured. Nine M1 and E2 strengths involving MS states agree with the O(6) limit of the interacting boson model-2 using the proton boson E2 charge as the only free parameter.Comment: 9 pages, 3 PostScript figures included, ReVTeX, accepted for publication in Physical Review Letters, tentatively scheduled for August 9, 199