372 research outputs found
Hafnium carbide formation in oxygen deficient hafnium oxide thin films
On highly oxygen deficient thin films of hafnium oxide (hafnia, HfO)
contaminated with adsorbates of carbon oxides, the formation of hafnium carbide
(HfC) at the surface during vacuum annealing at temperatures as low as 600
{\deg}C is reported. Using X-ray photoelectron spectroscopy the evolution of
the HfC surface layer related to a transformation from insulating into
metallic state is monitored in situ. In contrast, for fully stoichiometric
HfO thin films prepared and measured under identical conditions, the
formation of HfC was not detectable suggesting that the enhanced adsorption
of carbon oxides on oxygen deficient films provides a carbon source for the
carbide formation. This shows that a high concentration of oxygen vacancies in
carbon contaminated hafnia lowers considerably the formation energy of hafnium
carbide. Thus, the presence of a sufficient amount of residual carbon in
resistive random access memory devices might lead to a similar carbide
formation within the conducting filaments due to Joule heating
Evaluation of geomechanical and acustic properties of shales using drill cuttings as the way to better understand the formation
Structural and electronic properties of Pb1-xCdxTe and Pb1-xMnxTe ternary alloys
A systematic theoretical study of two PbTe-based ternary alloys, Pb1-xCdxTe
and Pb1-xMnxTe, is reported. First, using ab initio methods we study the
stability of the crystal structure of CdTe - PbTe solid solutions, to predict
the composition for which rock-salt structure of PbTe changes into zinc-blende
structure of CdTe. The dependence of the lattice parameter on Cd (Mn) content x
in the mixed crystals is studied by the same methods. The obtained decrease of
the lattice constant with x agrees with what is observed in both alloys. The
band structures of PbTe-based ternary compounds are calculated within a
tight-binding approach. To describe correctly the constituent materials new
tight-binding parameterizations for PbTe and MnTe bulk crystals as well as a
tight-binding description of rock-salt CdTe are proposed. For both studied
ternary alloys, the calculated band gap in the L point increases with x, in
qualitative agreement with photoluminescence measurements in the infrared. The
results show also that in p-type Pb1-xCdxTe and Pb1-xMnxTe mixed crystals an
enhancement of thermoelectrical power can be expected.Comment: 10 pages, 13 figures, submitted to Physical Review
Self-reduction of the native TiO2(110) surface during cooling after thermal annealing - in-operando investigations
We investigate the thermal reduction of TiO2 in ultra-high vacuum. Contrary to what is usually assumed, we observe that the maximal surface reduction occurs not during the heating, but during the cooling of the sample back to room temperature. We describe the self-reduction, which occurs as a result of differences in the energies of defect formation in the bulk and surface regions. The findings presented are based on X-ray photoelectron spectroscopy carried out in-operando during the heating and cooling steps. The presented conclusions, concerning the course of redox processes, are especially important when considering oxides for resistive switching and neuromorphic applications and also when describing the mechanisms related to the basics of operation of solid oxide fuel cells
Studies of resistance switching effects in metal/YBa2Cu3O7-x interface junctions
Current-voltage characteristics of planar junctions formed by an epitaxial
c-axis oriented YBa2Cu3O7-x thin film micro-bridge and Ag counter-electrode
were measured in the temperature range from 4.2 K to 300 K. A hysteretic
behavior related to switching of the junction resistance from a high-resistive
to a low-resistive state and vice-versa was observed and analyzed in terms of
the maximal current bias and temperature dependence. The same effects were
observed on a sub-micrometer scale YBa2Cu3O7-x thin film - PtIr point contact
junctions using Scanning Tunneling Microscope. These phenomena are discussed
within a diffusion model, describing an oxygen vacancy drift in YBa2Cu3O7-x
films in the nano-scale vicinity of the junction interface under applied
electrical fields.Comment: To be published in Applied Surface Science
Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale
Stable and switchable polarization of ferroelectric materials opens a
possibility to electrically control their functional behavior. A particularly
promising approach is to employ ferroelectric tunnel junctions where the
polarization reversal in a ferroelectric barrier changes the tunneling current
across the junction. Here, we demonstrate the reproducible tunneling
electroresistance effect using a combination of Piezoresponse Force Microscopy
(PFM) and Conducting Atomic Force Microscopy (C-AFM) techniques on
nanometer-thick epitaxial BaTiO3 single crystal thin films on SrRuO3 bottom
electrodes. Correlation between ferroelectric and electronic transport
properties is established by the direct nanoscale visualization and control of
polarization and tunneling current in BaTiO3 films. The obtained results show a
change in resistance by about two orders of magnitude upon polarization
reversal on a lateral scale of 20 nm at room temperature. These results are
promising for employing ferroelectric tunnel junctions in non-volatile memory
and logic devices, not involving charge as a state variable.Comment: 18 pages, 4 figure
- …