133 research outputs found

    Commercial Concession: Issues of Conceptual Apparatus

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    The article discusses the theoretical issues of correlation of terms used to refer to the agreement of commercial concession, as well as related issues arising from legal practice and theory of civil law

    Quantum-chemical estimation of the stability and reactivity of diphosphonium salts

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    For a series of diphosphonium salts containing two positively charged covalently bonded phosphorus atoms, XnY3-nP +P+XnY3-n (X = alkyl substituent, Y = amino group, n = 0-3), the stability, reactivity, and P-P bond strength were evaluated by various physicochemical methods. The P-P bond energy is appreciably influenced by both steric factors and donor properties of the substituents. The calculations confirmed that transformations of diphosphonium salts can involve cleavage of both P-P and P-N (or P-C) bonds

    Quantum-chemical estimation of the stability and reactivity of diphosphonium salts

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    For a series of diphosphonium salts containing two positively charged covalently bonded phosphorus atoms, XnY3-nP +P+XnY3-n (X = alkyl substituent, Y = amino group, n = 0-3), the stability, reactivity, and P-P bond strength were evaluated by various physicochemical methods. The P-P bond energy is appreciably influenced by both steric factors and donor properties of the substituents. The calculations confirmed that transformations of diphosphonium salts can involve cleavage of both P-P and P-N (or P-C) bonds

    Foresight technologies in the formation of a sustainable regional development strategy

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    In the modern regional management system, new principles, methods and tools should be used. The purpose of this paper is to substantiate theoretical and methodological approaches to the application of foresight technologies as a modern tool for optimizing the system of regional management in the formation of a strategy for sustainable development. The paper analyzes the Russian and international experience of foresight formation and identifies the features of foresight introduction at the meso level; a roadmap for the sustainable development of a region, developed based on an analysis of long-term forecast and program regional documents, as well as a SWOT analysis of the socio-ecological and economic system of the Republic of Tatarstan. The study determines the significance of foresight technologies in the context of the formation of sustainable development strategies for regional and municipal administrations. Recommendations on the developed "Roadmap for the Sustainable Development of the Republic of Tatarstan" were studied and used in implementing measures to ensure the sustainable development of the urban economy.peer-reviewe

    Precision determination of band offsets in strained InGaAs/GaAs quantum wells by C-V-profiling and Schroedinger-Poisson self-consistent simulation

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    The results of measurements and numerical simulation of charge carrier distribution and energy states in strained quantum wells In_xGa_{1-x}As/GaAs (0.06 < x < 0.29) by C-V-profiling are presented. Precise values of conduction band offsets for these pseudomorphic QWs have been obtained by means of self-consistent solution of Schroedinger and Poisson equations and following fitting to experimental data. For the conduction band offsets in strained In_xGa_{1-x}As/GaAs - QWs the expression DE_C(x) = 0.814x - 0.21x^2 has been obtained.Comment: 9 pages, 12 figures, RevTeX

    Fabrication and characterization of 1, 5, 10 at.% Ce:Y2O3 nanopowders

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    Nanopowders (particle size of about 7-14 nm) of yttrium oxide doped with cerium ions with concentrations of 1, 5, 10 at.% have been synthesized by laser ablation of the target. For the first time in the world the cerium concentration of 10 at.% in the yttrium oxide lattice has been obtained. Their morphology, structure, and scintillation properties have been investigated. No significant cathodoluminescence of the activator in the Ce3+ state has been detected in the powders, and X-ray luminescence was completely absent. Presumably, the cerium ion is in the nonradiative state of Ce4+. Β© Published under licence by IOP Publishing Ltd.Russian Foundation for Basic Research,Β RFBR: 19-08-00117The reported study was funded by RFBR, project number 19-08-00117. The authors gratefully acknowledge E.V. Tihonov and Dr. A.I. Medvedev from Institute of Electrophysics UrB RAS for laser synthesis of nanopowders and XRD analysis, respectively

    ΠŸΠΎΠ΄Π³ΠΎΡ‚ΠΎΠ²ΠΊΠ° спСциалистов ΠΈ магистров ΠΏΠΎ ΠΌΠ΅Ρ‚Ρ€ΠΎΠ»ΠΎΠ³ΠΈΠΈ, стандартизации ΠΈ сСртификации

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    In work advantages of engineers and masters education of the higher engineering school in metrology, standardization and certification in the conditions of multilevel structure of the basic educational programs in the Moscow state academy of fine chemical technology named after M.V. Lomonosov are openedΠ’ Ρ€Π°Π±ΠΎΡ‚Π΅ раскрыты прСимущСства ΠΏΠΎΠ΄Π³ΠΎΡ‚ΠΎΠ²ΠΊΠΈ магистров ΠΈ спСциалистов Π²Ρ‹ΡΡˆΠ΅ΠΉ ΠΈΠ½ΠΆΠ΅Π½Π΅Ρ€Π½ΠΎΠΉ ΡˆΠΊΠΎΠ»Ρ‹ ΠΏΠΎ ΠΌΠ΅Ρ‚Ρ€ΠΎΠ»ΠΎΠ³ΠΈΠΈ, стандартизации ΠΈ сСртификации Π² условиях ΠΌΠ½ΠΎΠ³ΠΎΡƒΡ€ΠΎΠ²Π½Π΅Π²ΠΎΠΉ структуры основных ΠΎΠ±Ρ€Π°Π·ΠΎΠ²Π°Ρ‚Π΅Π»ΡŒΠ½Ρ‹Ρ… ΠΏΡ€ΠΎΠ³Ρ€Π°ΠΌΠΌ Π² Московской Π°ΠΊΠ°Π΄Π΅ΠΌΠΈΠΈ Ρ‚ΠΎΠ½ΠΊΠΎΠΉ химичСской Ρ‚Π΅Ρ…Π½ΠΎΠ»ΠΎΠ³ΠΈΠΈ ΠΈΠΌΠ΅Π½ΠΈ М.Π’. Ломоносов

    ΠšΡ€Π΅ΠΌΠ½ΠΈΠ΅Π²Π°Ρ элСктронно-Ρ‡ΡƒΠ²ΡΡ‚Π²ΠΈΡ‚Π΅Π»ΡŒΠ½Π°Ρ pin-Π»ΠΈΠ½Π΅ΠΉΠΊΠ°, облучаСмая с ΠΎΠ±Ρ€Π°Ρ‚Π½ΠΎΠΉ стороны

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    Introduction. In recent decades, in the field of photoelectronics, special attention has been paid to the development of semiconductor matrix photodetectors. These detectors have become an effective alternative to existing television receiving systems. Among such devices, linear position-sensitive sensors are used in cases where the rapid registration of changes to the environment is required (for instance, high-speed locators for flying vehicles).Aim. To develop a strip of silicon pin-diodes as part of a hybrid IR-detector for effective registration of photoelectrons with time resolution less than 10 ns, as well as to model the key electro-physical characteristics of the strip.Materials and methods. In the device under development, the registration of photoelectrons is achieved by the presence of a near-surface field using p ++–p junction formed by diffusion of boron into the silicon with resistivity of 3 kΞ© Β· cm. The pulling field is also formed in the space charge region between p ++ - and n ++ -regions. Diffusion of phosphorus was carried out to create the n ++ -region. Numerical calculations of potential distribution, concentration of free charge carriers and currents were carried out using software for 1D- and 2D-modelling (SimWin and TCAD Synopsys).Results. 2D-calculation of charge carrier concentration and potential distribution was performed. The study determined the minimum bias for the complete depletion of the i-layer, including that for longitudinal grooves of various depths. The strip was tested as part of a hybrid photoelectric device by irradiating light pulses from IR LED. When the voltage on the diodes was reached –270 V, the duration of the signal front on all channels was 5…9 ns.Conclusion. For use in IR-hybrid detectors, a strip of 12 silicon pin-diodes was developed with a sensitive element of 24 Γ— 0.2 mm in dimension. The study of pulse characteristics showed that the necessary duration of the front signal on all channels was achieved without thinning thus satisfying the requirements for high-speed position-sensitive sensor of the infrared radiation.Π’Π²Π΅Π΄Π΅Π½ΠΈΠ΅. Π’ послСдниС дСсятилСтия Π² фотоэлСктроникС особоС Π²Π½ΠΈΠΌΠ°Π½ΠΈΠ΅ удСляСтся Ρ€Π°Π·Ρ€Π°Π±ΠΎΡ‚ΠΊΠ΅ ΠΏΠΎΠ»ΡƒΠΏΡ€ΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊΠΎΠ²Ρ‹Ρ… ΠΌΠ°Ρ‚Ρ€ΠΈΡ‡Π½Ρ‹Ρ… Ρ„ΠΎΡ‚ΠΎΠΏΡ€ΠΈΠ΅ΠΌΠ½Ρ‹Ρ… устройств, ΠΊΠΎΡ‚ΠΎΡ€Ρ‹Π΅ фактичСски стали эффСктивной Π°Π»ΡŒΡ‚Π΅Ρ€Π½Π°Ρ‚ΠΈΠ²ΠΎΠΉ ΡΡƒΡ‰Π΅ΡΡ‚Π²ΡƒΡŽΡ‰ΠΈΠΌ Π°Π½Π°Π»ΠΎΠ³ΠΎΠ²Ρ‹ΠΌ Ρ‚Π΅Π»Π΅Π²ΠΈΠ·ΠΈΠΎΠ½Π½Ρ‹ΠΌ ΠΏΡ€ΠΈΠ΅ΠΌΠ½Ρ‹ΠΌ систСмам. Π‘Ρ€Π΅Π΄ΠΈ Ρ‚Π°ΠΊΠΈΡ… устройств Π»ΠΈΠ½Π΅ΠΉΠ½Ρ‹Π΅ ΠΏΠΎΠ·ΠΈΡ†ΠΈΠΎΠ½Π½ΠΎ-Ρ‡ΡƒΠ²ΡΡ‚Π²ΠΈΡ‚Π΅Π»ΡŒΠ½Ρ‹Π΅ Π΄Π°Ρ‚Ρ‡ΠΈΠΊΠΈ ΠΏΡ€ΠΈΠΌΠ΅Π½ΡΡŽΡ‚ΡΡ для рСгистрации быстрых ΠΈΠ·ΠΌΠ΅Π½Π΅Π½ΠΈΠΉ Π² ΠΎΠΊΡ€ΡƒΠΆΠ°ΡŽΡ‰Π΅ΠΉ обстановкС ΠΈ ΠΈΡ… ΠΏΠΎΡΠ»Π΅Π΄ΡƒΡŽΡ‰Π΅ΠΉ ΠΎΠ±Ρ€Π°Π±ΠΎΡ‚ΠΊΠΈ (Π½Π°ΠΏΡ€ΠΈΠΌΠ΅Ρ€, Π±Ρ‹ΡΡ‚Ρ€ΠΎΠ΄Π΅ΠΉΡΡ‚Π²ΡƒΡŽΡ‰ΠΈΠ΅ Π»ΠΎΠΊΠ°Ρ‚ΠΎΡ€Ρ‹ Π»Π΅Ρ‚Π°Ρ‚Π΅Π»ΡŒΠ½Ρ‹Ρ… Π°ΠΏΠΏΠ°Ρ€Π°Ρ‚ΠΎΠ²).ЦСль Ρ€Π°Π±ΠΎΡ‚Ρ‹. Π‘ΠΎΠ·Π΄Π°Π½ΠΈΠ΅ Π»ΠΈΠ½Π΅ΠΉΠΊΠΈ ΠΊΡ€Π΅ΠΌΠ½ΠΈΠ΅Π²Ρ‹Ρ… pin-Π΄ΠΈΠΎΠ΄ΠΎΠ² для использования Π² составС Π³ΠΈΠ±Ρ€ΠΈΠ΄Π½ΠΎΠ³ΠΎ Π΄Π΅Ρ‚Π΅ΠΊΡ‚ΠΎΡ€Π° ИК-излучСния с Ρ†Π΅Π»ΡŒΡŽ рСгистрации фотоэлСктронов с врСмСнны́м Ρ€Π°Π·Ρ€Π΅ΡˆΠ΅Π½ΠΈΠ΅ΠΌ Π»ΡƒΡ‡ΡˆΠ΅ 10 нс. ΠœΠΎΠ΄Π΅Π»ΠΈΡ€ΠΎΠ²Π°Π½ΠΈΠ΅ основных элСктрофизичСских характСристик Π»ΠΈΠ½Π΅ΠΉΠΊΠΈ.ΠœΠ°Ρ‚Π΅Ρ€ΠΈΠ°Π»Ρ‹ ΠΈ ΠΌΠ΅Ρ‚ΠΎΠ΄Ρ‹. Π’ Ρ€Π°Π·Ρ€Π°Π±Π°Ρ‚Ρ‹Π²Π°Π΅ΠΌΠΎΠΌ ΠΏΡ€ΠΈΠ±ΠΎΡ€Π΅ рСгистрация фотоэлСктронов обСспСчиваСтся Π·Π° счСт наличия приповСрхностного поля ΠΏΡ€ΠΈ использовании p ++–p-ΠΏΠ΅Ρ€Π΅Ρ…ΠΎΠ΄Π°, сформированного Π΄ΠΈΡ„Ρ„ΡƒΠ·ΠΈΠ΅ΠΉ Π±ΠΎΡ€Π° Π² ΠΊΡ€Π΅ΠΌΠ½ΠΈΠΉ с ΡƒΠ΄Π΅Π»ΡŒΠ½Ρ‹ΠΌ сопротивлСниСм 3 кОм Β· см. ВянущСС ΠΏΠΎΠ»Π΅, Π² свою ΠΎΡ‡Π΅Ρ€Π΅Π΄ΡŒ, Ρ‚Π°ΠΊΠΆΠ΅ формируСтся Π² области объСмного заряда ΠΌΠ΅ΠΆΠ΄Ρƒ p ++ - ΠΈ n ++ -областями. Для создания n ++ -области ΠΏΡ€ΠΎΠ²ΠΎΠ΄ΠΈΠ»Π°ΡΡŒ диффузия фосфора. ЧислСнныС расчСты распрСдСлСния ΠΏΠΎΡ‚Π΅Π½Ρ†ΠΈΠ°Π»Π°, ΠΊΠΎΠ½Ρ†Π΅Π½Ρ‚Ρ€Π°Ρ†ΠΈΠΈ свободных носитСлСй заряда ΠΈ Ρ‚ΠΎΠΊΠΎΠ² ΠΏΡ€ΠΎΠ²ΠΎΠ΄ΠΈΠ»ΠΈΡΡŒ Π² ΠΏΡ€ΠΎΠ³Ρ€Π°ΠΌΠΌΠ½Ρ‹Ρ… ΠΏΠ°ΠΊΠ΅Ρ‚Π°Ρ… ΠΎΠ΄Π½ΠΎΠΌΠ΅Ρ€Π½ΠΎΠ³ΠΎ (SimWin) ΠΈ Π΄Π²ΡƒΠΌΠ΅Ρ€Π½ΠΎΠ³ΠΎ (TCAD Synopsys) модСлирования.Π Π΅Π·ΡƒΠ»ΡŒΡ‚Π°Ρ‚Ρ‹. ΠŸΡ€ΠΎΠ²Π΅Π΄Π΅Π½ Π΄Π²ΡƒΠΌΠ΅Ρ€Π½Ρ‹ΠΉ расчСт распрСдСлСния ΠΊΠΎΠ½Ρ†Π΅Π½Ρ‚Ρ€Π°Ρ†ΠΈΠΈ свободных носитСлСй заряда ΠΈ ΠΏΠΎΡ‚Π΅Π½Ρ†ΠΈΠ°Π»Π° Π² исслСдуСмой pin-структурС. ΠžΠΏΡ€Π΅Π΄Π΅Π»Π΅Π½Ρ‹ ΠΌΠΈΠ½ΠΈΠΌΠ°Π»ΡŒΠ½Ρ‹Π΅ напряТСния, ΠΎΠ±Π΅ΡΠΏΠ΅Ρ‡ΠΈΠ²Π°ΡŽΡ‰ΠΈΠ΅ ΠΏΠΎΠ»Π½ΠΎΠ΅ ΠΎΠ±Π΅Π΄Π½Π΅Π½ΠΈΠ΅ i-слоя, Π² Ρ‚ΠΎΠΌ числС для случая ΠΏΡ€ΠΎΠ΄ΠΎΠ»ΡŒΠ½ΠΎΠΉ ΠΊΠ°Π½Π°Π²ΠΊΠΈ Ρ€Π°Π·Π»ΠΈΡ‡Π½ΠΎΠΉ Π³Π»ΡƒΠ±ΠΈΠ½Ρ‹. Π›ΠΈΠ½Π΅ΠΉΠΊΠ° Ρ‚Π΅ΡΡ‚ΠΈΡ€ΠΎΠ²Π°Π»Π°ΡΡŒ Π² составС Π³ΠΈΠ±Ρ€ΠΈΠ΄Π½ΠΎΠ³ΠΎ фотоэлСктронного ΠΏΡ€ΠΈΠ±ΠΎΡ€Π° ΠΎΠ±Π»ΡƒΡ‡Π΅Π½ΠΈΠ΅ΠΌ свСтовыми ΠΈΠΌΠΏΡƒΠ»ΡŒΡΠ°ΠΌΠΈ ΠΎΡ‚ ИК-свСтодиода. ΠŸΡ€ΠΈ напряТСнии Π½Π° Π΄ΠΈΠΎΠ΄Π°Ρ… Π»ΠΈΠ½Π΅ΠΉΠΊΠΈ –270 Π’ достигнута Π΄Π»ΠΈΡ‚Π΅Π»ΡŒΠ½ΠΎΡΡ‚ΡŒ Ρ„Ρ€ΠΎΠ½Ρ‚Π° сигнала Π½Π° всСх ΠΊΠ°Π½Π°Π»Π°Ρ… 5...9 нс.Π—Π°ΠΊΠ»ΡŽΡ‡Π΅Π½ΠΈΠ΅. Для Π³ΠΈΠ±Ρ€ΠΈΠ΄Π½ΠΎΠ³ΠΎ Π΄Π΅Ρ‚Π΅ΠΊΡ‚ΠΎΡ€Π° ИК-излучСния Ρ€Π°Π·Ρ€Π°Π±ΠΎΡ‚Π°Π½Π° Π»ΠΈΠ½Π΅ΠΉΠΊΠ° ΠΈΠ· 12 ΠΊΡ€Π΅ΠΌΠ½ΠΈΠ΅Π²Ρ‹Ρ… pin-Π΄ΠΈΠΎΠ΄ΠΎΠ², с Ρ€Π°Π·ΠΌΠ΅Ρ€Π°ΠΌΠΈ Ρ‡ΡƒΠ²ΡΡ‚Π²ΠΈΡ‚Π΅Π»ΡŒΠ½ΠΎΠΉ области элСмСнта 24 Γ— 0.2 ΠΌΠΌ. По Ρ€Π΅Π·ΡƒΠ»ΡŒΡ‚Π°Ρ‚Π°ΠΌ исслСдований ΠΈΠΌΠΏΡƒΠ»ΡŒΡΠ½ΠΎΠΉ характСристики ΠΏΠΎΠΊΠ°Π·Π°Π½ΠΎ, Ρ‡Ρ‚ΠΎ Π±Π΅Π· ΠΎΠΏΠ΅Ρ€Π°Ρ†ΠΈΠΈ утонСния достигнута Π΄Π»ΠΈΡ‚Π΅Π»ΡŒΠ½ΠΎΡΡ‚ΡŒ Ρ„Ρ€ΠΎΠ½Ρ‚Π° сигнала Π½Π° всСх ΠΊΠ°Π½Π°Π»Π°Ρ…, ΡƒΠ΄ΠΎΠ²Π»Π΅Ρ‚Π²ΠΎΡ€ΡΡŽΡ‰Π°Ρ трСбованиям ΠΊ Π±Ρ‹ΡΡ‚Ρ€ΠΎΠ΄Π΅ΠΉΡΡ‚Π²ΡƒΡŽΡ‰Π΅ΠΌΡƒ ΠΏΠΎΠ·ΠΈΡ†ΠΈΠΎΠ½Π½ΠΎ-Ρ‡ΡƒΠ²ΡΡ‚Π²ΠΈΡ‚Π΅Π»ΡŒΠ½ΠΎΠΌΡƒ Π΄Π°Ρ‚Ρ‡ΠΈΠΊΡƒ ИК-излучСния
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