Soliton physics with semiconductor exciton–polaritons in confined systems

In the past decade, there has been a significant progress in the study of non-linear polariton phenomena in semiconductor microcavities. One of the key features of nonlinear systems is the emergence of solitons. The complexity and the inherently strong nonlinearity of the polariton system made it a perfect sandpit for observing solitonic effects in half-light half-matter environment. This review focuses on the theory and the latest experimental elucidating physics as well as potential applications of conservative and dissipative solitons in exciton–polariton systems

Vortices in resonant polariton condensates in semiconductor microcavities

Covering general theoretical concepts and the research to date, this book demonstrates that Bose-Einstein condensation is a truly universal phenomenon

Polarization bistability and resultant spin rings in semiconductor microcavities

The transmission of a pump laser resonant with the lower polariton branch of a semiconductor microcavity is shown to be highly dependent on the degree of circular polarization of the pump. Spin dependent anisotropy of polariton-polariton interactions allows the internal polarization to be controlled by varying the pump power. The formation of spatial patterns, spin rings with high degree of circular polarization, arising as a result of polarization bistability, is observed. A phenomenological model based on spin dependent Gross-Pitaevskii equations provides a good description of the experimental results. Inclusion of interactions with the incoherent exciton reservoir, which provides spin-independent blueshifts of the polariton modes, is found to be essential.Comment: 5 pages, 3 figure

Backward Cherenkov radiation emitted by polariton solitons in a microcavity wire

Exciton-polaritons in semiconductor microcavities form a highly nonlinear platform to study a variety of effects interfacing optical, condensed matter, quantum and statistical physics. We show that the complex polariton patterns generated by picosecond pulses in microcavity wire waveguides can be understood as the Cherenkov radiation emitted by bright polariton solitons, which is enabled by the unique microcavity polariton dispersion, which has momentum intervals with positive and negative group velocities. Unlike in optical fibres and semiconductor waveguides, we observe that the microcavity wire Cherenkov radiation is predominantly emitted with negative group velocity and therefore propagates backwards relative to the propagation direction of the emitting soliton. We have developed a theory of the microcavity wire polariton solitons and of their Cherenkov radiation and conducted a series of experiments, where we have measured polariton-soliton pulse compression, pulse breaking and emission of the backward Cherenkov radiation

Spatiotemporal continuum generation in polariton waveguides.

We demonstrate the generation of a spatiotemporal optical continuum in a highly nonlinear exciton-polariton waveguide using extremely low excitation powers (2-ps, 100-W peak power pulses) and a submillimeter device suitable for integrated optics applications. We observe contributions from several mechanisms over a range of powers and demonstrate that the strong light-matter coupling significantly modifies the physics involved in all of them. The experimental data are well understood in combination with theoretical modeling. The results are applicable to a wide range of systems with linear coupling between nonlinear oscillators and particularly to emerging polariton devices that incorporate materials, such as gallium nitride and transition metal dichalcogenide monolayers that exhibit large light-matter coupling at room temperature. These open the door to low-power experimental studies of spatiotemporal nonlinear optics in submillimeter waveguide devices

Logic Gates with Bright Dissipative Polariton Solitons in Bragg-Cavity Systems

Optical solitons are an ideal platform for the implementation of communication lines, since they can be packed extremely close one to another without risking partial loss of the encoded information due to their interaction. On the other hand, soliton-soliton interactions are needed to implement computations and achieve all-optical information processing. Here we study how bright dissipative polariton solitons interact and exploit their interaction to implement AND and OR gates with state of the art technology. Moreover, we show that soliton-soliton interaction can be used to determine the sign of {\alpha}2, the parameter describing the interaction between polaritons with opposite spin

Spatial patterns of dissipative polariton solitons in semiconductor microcavities

We report propagating bound microcavity polariton soliton arrays consisting of multipeak structures either along (x) or perpendicular (y) to the direction of propagation. Soliton arrays of up to five solitons are observed, with the number of solitons controlled by the size and power of the triggering laser pulse. The breakup along the x direction occurs when the effective area of the trigger pulse exceeds the characteristic soliton size determined by polariton-polariton interactions. Narrowing of soliton emission in energymomentum space indicates phase locking between adjacent solitons, consistent with numerical modeling which predicts stable multihump soliton solutions. In the y direction, the breakup originates from inhomogeneity across the wave front in the transverse direction which develops into a stable array only in the solitonic regime via phase-dependent interactions of propagating fronts

Effect of the GaAsP shell on optical properties of self-catalyzed GaAs nanowires grown on silicon

We realize growth of self-catalyzed core-shell GaAs/GaAsP nanowires (NWs) on Si substrates using molecular-beam epitaxy. Transmission electron microscopy (TEM) of single GaAs/GaAsP NWs confirms their high crystal quality and shows domination of the zinc-blende phase. This is further confirmed in optics of single NWs, studied using cw and time-resolved photoluminescence (PL). A detailed comparison with uncapped GaAs NWs emphasizes the effect of the GaAsP capping in suppressing the non-radiative surface states: significant PL enhancement in the core-shell structures exceeding 2000 times at 10K is observed; in uncapped NWs PL is quenched at 60K whereas single core-shell GaAs/GaAsP NWs exhibit bright emission even at room temperature. From analysis of the PL temperature dependence in both types of NW we are able to determine the main carrier escape mechanisms leading to the PL quench