Influence of 4f filling on electronic and magnetic properties of rare earth-Au surface compounds

One-atom-thick rare-earth/noble metal (RE-NM) compounds are attractive materials to investigate two-dimensional magnetism, since they are easy to synthesize into a common RE-NM2 structure with high crystal perfection. Here we perform a comparative study of the GdAu2, HoAu2, and YbAu2 monolayer compounds grown on Au(111). We find the same atomic lattice quality and moiré superlattice periodicity in the three cases, but different electronic properties and magnetism. The YbAu2 monolayer reveals the characteristic electronic signatures of a mixed-valence configuration in the Yb atom. In contrast, GdAu2 and HoAu2 show the trivalent character of the rare-earth and ferromagnetic transitions below 22 K. Yet, the GdAu2 monolayer has an in-plane magnetic easy-axis, versus the out-of-plane one in HoAu2. The electronic bands of the two trivalent compounds are very similar, while the divalent YbAu2 monolayer exhibits different band features. In the latter, a strong 4f-5d hybridization is manifested in neatly resolved avoided crossings near the Fermi level. First principles theory points to a residual presence of empty 4f states, explaining the fluctuating valence of Yb in the YbAu2 monolayer. © The Royal Society of Chemistry

Influence of the substrate bands on the sp-levels topology of Ag films on Ge(111)

Angle-resolved photoemission spectroscopy and first-principles calculations were employed to analyze unusual features in the electronic structure of ultrathin Ag films grown on Ge(111). The Ag sp-derived quantum well states exhibit hexagonal-like constant energy contours with different in-plane orientations near the center of the surface Brillouin zone, in striking contrast to the expectations for a free-standing Ag(111) layer. The experimental observations are explained by taking into account the effects of hybridization of the Ag states with the star-like shaped Ge band edges on constant energy planes

Evidence of graphene-like electronic signature in silicene nanoribbons

We report on the electronic properties of straight, 1.6 nm wide, silicene nanoribbons on Ag(110), arranged in a one-dimensional grating with a pitch of 2 nm, whose high-resolution scanning tunneling microscopy images reveal a honeycomb geometry. Angle-resolved photoemission shows quantum confined electronic states of one-dimensional character. The silicon band dispersion along the direction of the nanoribbons suggests a behavior analogous to the Dirac cones of graphene on different substrates