Aluminum Oxide Layers as Possible Components for Layered Tunnel Barriers

We have studied transport properties of Nb/Al/AlOx/Nb tunnel junctions with ultrathin aluminum oxide layers formed by (i) thermal oxidation and (ii) plasma oxidation, before and after rapid thermal post-annealing of the completed structures at temperatures up to 550 deg C. Post-annealing at temperatures above 300 deg C results in a significant decrease of the tunneling conductance of thermally-grown barriers, while plasma-grown barriers start to change only at annealing temperatures above 450 deg C. Fitting the experimental I-V curves of the junctions using the results of the microscopic theory of direct tunneling shows that the annealing of thermally-grown oxides at temperatures above 300 deg C results in a substantial increase of their average tunnel barriers height, from ~1.8 eV to ~2.45 eV, versus the practically unchanged height of ~2.0 eV for plasma-grown layers. This difference, together with high endurance of annealed barriers under electric stress (breakdown field above 10 MV/cm) may enable all-AlOx and SiO2/AlOx layered "crested" barriers for advanced floating-gate memory applications.Comment: 7 pages, 6 figure

Proximity of the superconducting dome and the quantum critical point in the two-dimensional Hubbard model

We use the dynamical cluster approximation to understand the proximity of the superconducting dome to the quantum critical point in the two-dimensional Hubbard model. In a BCS formalism, Tc may be enhanced through an increase in the d-wave pairing interaction (Vd) or the bare pairing susceptibility (χ0d). At optimal doping, where Vd is revealed to be featureless, we find a power-law behavior of χ 0d(ω=0), replacing the BCS log, and strongly enhanced T c. We suggest experiments to verify our predictions. © 2011 American Physical Society

New insights into the evolution of wheat avenin-like proteins in wild emmer wheat (Triticum dicoccoides)

Fifteen full-length wheat grain avenin-like protein coding genes (TaALP) were identified on chromosome arms 7AS, 4AL, and 7DS of bread wheat with each containing five genes. Besides the a- and b-type ALPs, a c type was identified in the current paper. Both a and b types have two subunits, named x and y types. The five genes on each of the three chromosome arms consisted of two x-type genes, two y-type genes, and one c-type gene. The a-type genes were typically of 520 bp in length, whereas the b types were of 850 bp in length, and the c type was of 470 bp in length. The ALP gene transcript levels were significantly up-regulated in Blumeria graminis f. sp. tritici (Bgt)-infected wheat grain caryopsis at early grain filling. Wild emmer wheat [(WEW), Triticum dicoccoides] populations were focused on in our paper to identify allelic variations of ALP genes and to study the influence of natural selection on certain alleles. Consequently, 25 alleles were identified for TdALP-bx-7AS, 13 alleles were identified for TdALP-ax-7AS, 7 alleles were identified for TdALP-ay-7AS, and 4 alleles were identified for TdALP-ax-4AL. Correlation studies on TdALP gene diversity and ecological stresses suggested that environmental factors contribute to the ALP polymorphism formation in WEW. Many allelic variants of ALPs in the endosperm of WEW are not present in bread wheat and therefore could be utilized in breeding bread wheat varieties for better quality and elite plant defense characteristics

CVM studies on the atomic ordering in complex perovskite alloys

The atomic ordering in complex perovskite alloys is investigated by the cluster variation method (CVM). For the 1/3\{111\}-type ordered structure, the order-disorder phase transition is the first order, and the order parameter of the 1:2 complex perovskite reaches its maximum near x=0.25. For the 1/2\{111\}-type ordered structure, the ordering transition is the second order. Phase diagrams for both ordered structures are obtained. The order-disorder line obeys the linear law.Comment: 10 pages, 6 figure

Flower pollination algorithm: a novel approach for multiobjective optimization

Multiobjective design optimization problems require multiobjective optimization techniques to solve, and it is often very challenging to obtain high-quality Pareto fronts accurately. In this article, the recently developed flower pollination algorithm (FPA) is extended to solve multiobjective optimization problems. The proposed method is used to solve a set of multiobjective test functions and two bi-objective design benchmarks, and a comparison of the proposed algorithm with other algorithms has been made, which shows that the FPA is efficient with a good convergence rate. Finally, the importance for further parametric studies and theoretical analysis is highlighted and discussed

An Intersecting Loop Model as a Solvable Super Spin Chain

In this paper we investigate an integrable loop model and its connection with a supersymmetric spin chain. The Bethe Ansatz solution allows us to study some properties of the ground state. When the loop fugacity $q$ lies in the physical regime, we conjecture that the central charge is $c=q-1$ for $q$ integer $< 2$. Low-lying excitations are examined, supporting a superdiffusive behavior for $q=1$. We argue that these systems are interesting examples of integrable lattice models realizing $c \leq 0$ conformal field theories.Comment: latex file, 7 page

On two-dimensionalization of three-dimensional turbulence in shell models

Applying a modified version of the Gledzer-Ohkitani-Yamada (GOY) shell model, the signatures of so-called two-dimensionalization effect of three-dimensional incompressible, homogeneous, isotropic fully developed unforced turbulence have been studied and reproduced. Within the framework of shell models we have obtained the following results: (i) progressive steepening of the energy spectrum with increased strength of the rotation, and, (ii) depletion in the energy flux of the forward forward cascade, sometimes leading to an inverse cascade. The presence of extended self-similarity and self-similar PDFs for longitudinal velocity differences are also presented for the rotating 3D turbulence case

Understanding the proton's spin structure

We discuss the tremendous progress that has been towards an understanding of how the spin of the proton is distributed on its quark and gluon constituents. This is a problem that began in earnest twenty years ago with the discovery of the proton ``spin crisis'' by the European Muon Collaboration. The discoveries prompted by that original work have given us unprecedented insight into the amount of spin carried by polarized gluons and the orbital angular momentum of the quarks.Comment: Review article for J. Phys. G, 1 figure, 22 page

Three-dimensional parton distribution functions g1Tg_{1T} and h1L⊥h_{1L}^\perp in the polarized proton-antiproton Drell-Yan process

We present predictions of the unweighted and weighted double spin asymmetries related to the transversal helicity distribution $g_{1T}$ and the longitudinal transversity distribution $h_{1L}^\perp$, two of eight leading-twist transverse momentum dependent parton distributions (TMDs) or three-dimensional parton distribution functions (3dPDFs), in the polarized proton-antiproton Drell-Yan process at typical kinematics on the Facility for Antiproton and Ion Research (FAIR). We conclude that FAIR is ideal to access the new 3dPDFs towards a detailed picture of the nucleon structure.Comment: 6 latex pages, 5 figures, version for publication in EPJ

Polarity in GaN and ZnO: Theory, measurement, growth, and devices

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Rev. 3, 041303 (2016) and may be found at https://doi.org/10.1063/1.4963919.The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence of a spontaneous electric polarization within these materials and their associated alloys (Ga,Al,In)N and (Zn,Mg,Cd)O. The polarity has also important consequences on the stability of the different crystallographic surfaces, and this becomes especially important when considering epitaxial growth. Furthermore, the internal polarization fields may adversely affect the properties of optoelectronic devices but is also used as a potential advantage for advanced electronic devices. In this article, polarity-related issues in GaN and ZnO are reviewed, going from theoretical considerations to electronic and optoelectronic devices, through thin film, and nanostructure growth. The necessary theoretical background is first introduced and the stability of the cation and anion polarity surfaces is discussed. For assessing the polarity, one has to make use of specific characterization methods, which are described in detail. Subsequently, the nucleation and growth mechanisms of thin films and nanostructures, including nanowires, are presented, reviewing the specific growth conditions that allow controlling the polarity of such objects. Eventually, the demonstrated and/or expected effects of polarity on the properties and performances of optoelectronic and electronic devices are reported. The present review is intended to yield an in-depth view of some of the hot topics related to polarity in GaN and ZnO, a fast growing subject over the last decade