TiB_2 and ZrB_2 diffusion barriers in GaAs Ohmic contact technology

The transition metal diboride compounds, ZrB_2 and TiB_2, interposed between Ni/Ge/Au Ohmic contact metallization on n‐type GaAs wafers and an overlying thick Au contact layer, have been investigated to evaluate their effectiveness in stabilizing the Ohmic contact by limiting the in‐diffusion of Au. All of the metal layers were e‐beam deposited except the ZrB_2 which was rf‐diode sputtered. The barrier layer thicknesses were 50 and 100 nm for the TiB_2 and the ZrB_2, respectively. Postdeposition alloying of the contacts was performed at 400, 425, or 450 °C. Auger electron spectroscopy depth profiling of the resultant Ohmic contacts demonstrates that the barrier layers effectively preclude penetration of Au to the Ohmic contact structure. Specific contact resistivities for such contacts are in the low 10^(−7) Ω cm^2 range; although some degradation of the contact resistivity is observed after long term annealing, the values of resistivities do not exceed 1.5×10^(−6) Ω cm^2 after 92 h at 350 °C

Influence of Annealing on the Optical and Scintillation Properties of CaWO4_4 Single Crystals

We investigate the influence of oxygen annealing on the room temperature optical and scintillation properties of CaWO$_4$ single crystals that are being produced for direct Dark Matter search experiments. The applied annealing procedure reduces the absorption coefficient at the peak position of the scintillation spectrum ($\sim430$ nm) by a factor of $\sim6$ and leads to an even larger reduction of the scattering coefficient. Furthermore, the annealing has no significant influence on the \emph{intrinsic} light yield. An additional absorption occurring at $\sim400$ nm suggests the formation of O$^-$ hole centers. Light-yield measurements at room temperature where one crystal surface was mechanically roughened showed an increase of the \emph{measured} light yield by $\sim40$ and an improvement of the energy resolution at 59.5 keV by $\sim12$ for the annealed crystal. We ascribe this result to the reduction of the absorption coefficient while the surface roughening is needed to compensate for the also observed reduction of the scattering coefficient after annealing

Deep Space 1 encounter with Comet 19P/Borrelly: Ion composition measurements by the PEPE mass spectrometer

Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/95280/1/grl16734.pd

Proposed SLR Optical Bench Required to Track Debris Using 1550 nm Lasers

A previous study has indicated that by using approx.1550 nm wavelengths a laser ranging system can track debris objects in an "eye safe" manner, while increasing the expected return rate by a factor of approx. 2/unit area of the telescope. In this presentation we develop the optical bench required to use approx.1550nm lasers, and integration with a 532nm system. We will use the optical bench configuration for NGSLR as the baseline, and indicate a possible injection point for the 1550 nm laser. The presentation will include what elements may need to be changed for transmitting the required power on the approx.1550nm wavelength, supporting the alignment of the laser to the telescope, and possible concerns for the telescope optics

Optimization of Neutral Atom Imagers

The interactions between plasma structures and neutral atom populations in interplanetary space can be effectively studied with energetic neutral atom imagers. For neutral atoms with energies less than 1 keV, the most efficient detection method that preserves direction and energy information is conversion to negative ions on surfaces. We have examined a variety of surface materials and conversion geometries in order to identify the factors that determine conversion efficiency. For chemically and physically stable surfaces smoothness is of primary importance while properties such as work function have no obvious correlation to conversion efficiency. For the noble metals, tungsten, silicon, and graphite with comparable smoothness, conversion efficiency varies by a factor of two to three. We have also examined the way in which surface conversion efficiency varies with the angle of incidence of the neutral atom and have found that the highest efficiencies are obtained at angles of incidence greater then 80deg. The conversion efficiency of silicon, tungsten and graphite were examined most closely and the energy dependent variation of conversion efficiency measured over a range of incident angles. We have also developed methods for micromachining silicon in order to reduce the volume to surface area over that of a single flat surface and have been able to reduce volume to surface area ratios by up to a factor of 60. With smooth micro-machined surfaces of the optimum geometry, conversion efficiencies can be increased by an order of magnitude over instruments like LENA on the IMAGE spacecraft without increase the instruments mass or volume

SiC As An Energetic Particle Detector

Several new technologies have been introduced recently in the region of semiconductor material for solid state detectors (SSD). Of particular interest is silicon carbide (SIC) since its band gap is larger than that of pure silicon, reducing its dark current and making SIC capable of operating at high temperatures and more tolerant of radiation damage. But the trade off is that a higher band gap also means fewer electron hole pairs generated, and thus a smaller signal, for detecting incident radiation. To determine what the lower limit of SiC detectors to energetic particles is, we irradiated a SiC diode with particles ranging in energy from 50 keV to 1.6 MeV and masses from 1 to 16 amu. We found that the SiC detectors sensitivity was comparable to that of pure silicon, with the SiC detector being able to measure particles down to 50 keV/amu and possibly lower