Clinical relevance of ticagrelor monotherapy following 1-month dual antiplatelet therapy after bifurcation percutaneous coronary intervention: Insight from GLOBAL LEADERS trial

Background: The aim of this study was to investigate the impact of ticagrelor monotherapy following 1-month dual antiplatelet therapy (DAPT) after percutaneous coronary intervention (PCI) for bifurcat

Reactive sputtering deposition of SiO2 thin films

SiO2 layers were deposited in a UHV chamber by 1 keV Ar+ ion sputtering from a high purity silicon target, using different values of the oxygen partial pressure (5×10-6–2×10-4 mbar) and of the ion beam current on the target (1.67–6.85 mA). The argon partial pressure during operation of the ion gun was 1×10-3 mbar. The substrate temperature was held at 550 °C and the films were deposited to a thickness of 12.5–150 nm, at a rate from 0.0018–0.035 nm s-1. Structural characterization of the deposited thin films was performed by Rutherford backscattering spectrometry (RBS analysis). Reactive sputtering was proved to be efficient for the deposition of silica at 550 °C, an oxygen partial pressure of 2×10-4 mbar (ion beam current on the target of 5 mA) or, at a lower deposition rate, ion beam current of 1.67 mA and an oxygen partial pressure of 6×10-5 mbar. One aspect of these investigations was to study the consumption of oxygen from the gas cylinder, which was found to be lower for higher deposition rates

Original scientific paper Reactive sputtering deposition of SiO2 thin films

Abstract: SiO2 layers were deposited in a UHV chamber by 1 keV Ar + ion sputtering from a high purity silicon target, using different values of the oxygen partial pressure (5×10-6–2×10-4 mbar) and of the ion beam current on the target (1.67–6.85 mA). The argon partial pressure during operation of the ion gun was 1×10-3 mbar. The substrate temperature was held at 550 °C and the films were deposited to a thickness of 12.5–150 nm, at a rate from 0.0018–0.035 nm s-1. Structural characterization of the deposited thin films was performed by Rutherford backscattering spectrometry (RBS analysis). Reactive sputtering was proved to be efficient for the deposition of silica at 550 °C, an oxygen partial pressure of 2×10-4 mbar (ion beam current on the target of 5 mA) or, at a lower deposition rate, ion beam current of 1.67 mA and an oxygen partial pressure of 6×10-5 mbar. One aspect of these investigations was to study the consumption of oxygen from the gas cylinder, which was found to be lower for higher deposition rates

How to Simulate the Microstructure Induced by a Nuclear Reactor with an Ion Beam Facility : DART

International audienceEven if the Binary Collision Approximation does not take into account relaxation processes at the end of the displacement cascade, the amount of displaced atoms calculated within this framework can be used to compare damages induced by different facilities like pressurized water reactors (PWR), fast breeder reactors (FBR), high temperature reactors (HTR) and ion beam facilities on a defined material. In this paper, a formalism is presented to evaluate the displacement cross-sections pointing out the effect of the anisotropy of nuclear reactions. From this formalism, the impact of fast neutrons (with a kinetic energy En superior to 1 MeV) is accurately described. This point allows calculating accurately the displacement per atom rates as well as primary and weighted recoil spectra. Such spectra provide useful information to select masses and energies of ions to perform realistic experiments in ion beam facilities

Magnetically guided left ventricular lead implantation based on a virtual three-dimensional reconstructed image of the coronary sinus

Aims: Left ventricular (LV) lead implantation is feasible using remote magnetic navigation of a guidewire (Stereotaxis, St Louis, MO, USA). A novel software that performs a three-dimensional (3D) reconstruction of vessels based on two or more angiographic views has been developed recently (CardiOp-B system™, Paeion Inc., Haifa, Israel). The objective of this paper is to evaluate: (i) the performance of the 3D reconstruction software which reproduce the anatomy of the coronary sinus (CS) and (ii) the efficacy of remotely navigating a magnetic guidewire within the CS based on this reconstruction. Methods and results: In patients undergoing cardiac resynchronization therapy implantation, a 3D reconstruction of the CS was performed using the CardiOp-B™ system. Accuracy of the reconstruction was evaluated by comparing with the CS angiogram. This reconstruction was imported into the Stereotaxis system. On the basis of the reconstruction, magnetic vectors were automatically selected to navigate within the CS and manually adjusted if required. Feasibility of deploying the guidewire and LV lead into the selected side branch (SB), fluoroscopy time (FT) required for cannulation of the target SB, and total FT were also evaluated. Sixteen patients

The TRAMOS pixel as a photo-detection device: design, architecture and building blocks

International audienceThe deep trapping gate device concept for charged particle detection was recently introduced in Saclay/IRFU. It is based on an n-MOS structure in which a buried gate, located below the n-channel, collects carriers which are generated by ionizing particles. They deposit their energy in a volume which extends in the bulk, below the buried gate. The n-channel device is based on holes in-buried gate localization. Source–drain current modulation occurs, measurable during readout. The buried gate (Deep Trapping Gate or DTG) contains deep level centers which can be introduced during process or may be made with a Quantum Well. The device can be scaled down providing a micron range resolution. The proof of principle for such a device was verified using 2D device and process simulations. Work under way focusses on the study of building blocks. In this contribution, the pixel proof of design, using existing fabrication techniques will be discussed first. The use of this pixel for photon imaging will be discussed

Contribution a l'etude de l'electromigration dans le niobium

SIGLEAvailable from CEN Saclay, Service de Documentation, 91191 Gif-sur-Yvette Cedex (France) / INIST-CNRS - Institut de l'Information Scientifique et TechniqueFRFranc