IGZO ince filme dayalı olarak üretilen heteroeklem diyotun elektriksel özellikleri

In this study, IGZO thin films were deposited on SLG and p-Si wafer at room temperature, under oxygen gas pressure of 5×10-2 and 7×10-2 mbar, using PLD technique and these thin films were annealed at 300oC temperature. IGZO thin films were grown in amorphous structure. As the oxygen gas pressure was increased, the particle size in the thin films were increased. IGZO/p-Si heterojunction diode was produced based on IGZO thin film that was grown at oxygen gas pressure of 7×10-2 mbar and not annealed, and J-V curves of this diode in darkness and under the illumination condition were obtained and then its ideality factor and barrier height were calculated. In an illumination condition, n,〖 R〗_s and Ф_b values of IGZO/Si heterojunction diode were calculated by the conventional J-V, Cheung Cheung and Norde methods. Results obtained in this work have been interpreted as well as concluded to be close to each other.Bu çalışmada, PLD tekniği kullanarak oda sıcaklığındaki SLG ve p-Si wafer üzerine 5×10-2 ve 7×10-2 mbar oksijen gaz basıncı altında IGZO ince filmler üretilmiş ve 300o C sıcaklıkta tavlanmışlardır. IGZO ince filmler amorf yapıda büyümüşlerdir. Oksijen gaz basıncı artarken, ince filmi oluşturan parçacıkların boyutu büyümüştür. 7×10-2 mbar oksijen gaz basıncı altında büyütülmüş ve tavlanmamış IGZO ince filme dayalı olarak IGZO/Si heteroeklem diyotu üretilmiş ve bu diyotun karanlık ve aydınlık şartlarda J-V eğrileri elde edilmiş, ideality faktörleri ve bariyer yükseklikleri hesaplanmıştır. Aydınlık ortam için, J-V, Cheung Cheung ve Norde metotları ile IGZO/Si heteroeklem diyotun n,〖 R〗_s and Ф_b değerleri hesaplanmıştır. Bu çalışmadan elde edilen sonuçlar analiz edilmiş ve bulunan değerlerin birbirlerine yakın olduğu yorumu yapılmıştır

PULSLU LASER DEPOZİSYON (PLD) YÖNTEMİ İLE ÜRETİLEN FTO ve ZnO İNCE FİLMLERİN MORFOLOJİK VE OPTİK ÖZELLİKLERİ

PULSLU LASER DEPOZİSYON (PLD) YÖNTEMİ İLE ÜRETİLEN FTO ve ZnO İNCE FİLMLERİN MORFOLOJİK VE OPTİK ÖZELLİKLERİ  ÖzetBu çalışmada, PLD tekniği ile oda sıcaklığında (RT) soda lime cam (SLG) alt tabaka üzerine büyütülen Flor (F) katkılı SnO2 (FTO) ve ZnO ince filmlerin üretiminde; laser enerjisinin, filmlerin optik ve morfolojik özellikleri üzerine etkileri incelenmiştir.  Bununla birlikte, faklı O2 gaz basıncında ZnO ince filmleri büyütülmüş ve bir ZnO ince film 300 oC sıcaklıkta tavlanmıştır.  İnce filmlerin, morfolojik yapısı Atomik Kuvvet Mikroskop (AFM) yöntemi, kristal yapısı ise X-ışını kırınımı  (XRD) yöntemi ile analiz edilmiştir.  FTO ve ZnO ince filmleri genel olarak gözenekli yapıdadır.  PLD ile oda sıcaklığındaki SLG üzerine büyütülen FTO ve ZnO ince filmler polikristal yapıya sahiptirler.  İnce filmler spektrumun görünür bölgesinde şeffaftırlar ve 3.75 eV (FTO), 3.50 eV (ZnO), 3.30 eV (tavlanmış ZnO) bant aralıklarına (Eg) sahiptirler. Çalışmada, laser enerjisi (FTO ve ZnO ince filmlerinin), O2 gaz basıncı ve tavlama sıcaklığı değerlerinin (sadece ZnO ince filminin) üretilen ince filmlerin morfolojik ve kristal yapıları ile optik özellikleri üzerine etkileri ayrıntılı olarak incelenmiş ve yorumlanmıştır.Anahtar Kelimeler: Pulslu Laser Depozisyon, ZnO, FTO, laser, bant aralığı, ince film, polikristal.MORPHOLOGICAL AND OPTICAL PROPERTIES OF FTO AND ZnO THIN FILMS PRODUCED BY PULSED LASER DEPOSITION (PLD) METHODAbstractIn this study, in the production of Fluorine (F) doped SnO2 (FTO) and ZnO thin films grown on soda lime glass (SLG) substrate by PLD technique at room temperature (RT); the effects of laser energy on optical and morphological properties of films have been investigated.  However, ZnO thin films were grown in a different O2 gas pressure and a ZnO thin film was annealed at 300 oC.  The morphological structure of thin films was analysed by Atomic Force Microscopy (AFM) method and the crystal structure by X-ray diffraction (XRD) method.  FTO and ZnO thin films are generally porous. FTO and ZnO thin films grown on PLD at room temperature on SLG substrate have polycrystalline structure. Thin films are transparent in the visible region of the spectrum and have the band gaps (Eg) of 3,75 eV (FTO), 3.50 eV (ZnO), 3.30 eV (annealed ZnO).  In the study, the effects of laser energy (FTO and ZnO thin films), O2 gas pressures and annealing temperature values (only ZnO thin film) on the morphological, crystal structures and optical properties of thin films were examined and interpreted in detail.Keywords: Pulsed Laser Deposition, ZnO, FTO, laser, band gap, thin film, polycrystalline

DIODE PROPERTY OF n-ZnO/p-Si HETEROJUNCTION STRUCTURE IN THE DARK AND ILLUMINATION CONDITION

DIODE PROPERTY OF n-ZnO/p-Si HETEROJUNCTION STRUCTURE IN THE DARK AND ILLUMINATION CONDITIONAbstractIn this study, Zinc Oxide (ZnO) thin film was deposited on the Silicon (Si) wafer by Pulsed Laser Deposition (PLD) to form n-ZnO/p-Si heterojunction.  The morphological and the crystal structure of ZnO thin film was analysed and interpreted by Atomic Force Microscopy (AFM) and X-Ray Diffraction (XRD), respectively.  The absorption spectrum was obtained by using the UV-Vis spectra and the band gap (Eg) was found by using Tauc Law.  The current density-Voltage (J-V) plot was obtained at room temperature (RT) in the dark and under illumination.  The barrier height (BH) and ideality factor were found about 0.46 eV and 1.35, respectively.  The largest values of open circuit voltage (Voc) and short-circuit current (Jsc) were about 100 mV and 3×10-2 mA/cm2, respectively.  It has been measured that ZnO/Si heterojunction diode behaves a solar cell like device under the illumination conditions.Keywords: Heterojunction, open circuit voltage, short circuit current, barrier height, ideality factorKARANLIK ve AYDINLIK ŞARTLARDA n-ZnO/p-Si HETEROEKLEM YAPISININ DİYOT ÖZELLİĞİÖzetBu çalışmada, n-ZnO/p-Si heteroeklem oluşturmak için Silikon (Si) wafer üzerine Çinko Oksit (ZnO) ince film Puls Lazer Deposizasyon (PLD) ile depozit edilmiştir. ZnO ince filmin morfolojik ve kristal yapısı, sırasıyla Atomik Kuvvet Mikroskopu (AFM) ve X-Ray Kırınımı (XRD) ile analiz edilmiş ve yorumlanmıştır. Soğurma spektrumu UV-Vis spektrumu kullanılarak elde edilmiş ve bant aralığı (Eg) Tauc yasası kullanılarak bulunmuştur. Akım yoğunluğu-Gerilim (J-V) grafiği, oda sıcaklığında (RT) karanlıkta ortamda ve ışık altında elde edilmiştir. Bariyer yüksekliği (BH) ve idealite faktörü sırasıyla yaklaşık 0.46 eV ve 1.35 bulunmuştur. Açık devre voltajının (Voc) ve kısa devre akım yoğunluğunun (Jsc) en büyük değerleri sırasıyla 100 mV ve 3x10-2 mA/cm2’dir. ZnO/Si heteroeklem diyotunun ışık altında güneş piline benzer bir cihaz gibi davrandığı gözlemlenmiştir.Anahtar Kelimeler: Heteroeklem, açık devre voltajı, kısa devre akımı, bariyer yüksekliği, idealite faktör

Effect of Ar Gas Pressure on LSPR Property of Au Nanoparticles: Comparison of Experimental and Theoretical Studies

In this study, the thin films were produced by using pulsed laser deposition (PLD) technique from gold (Au) nanoparticles deposited on two kinds of substrates under different argon (Ar) gas pressure. Microscope glass slides and silicon (100) wafers were used as amorphous and crystal substrates. The films were deposited under 2 × 10−3 mbar, 1 × 10−2 mbar, 2 × 10−2 mbar argon (Ar) ambient gas pressure. Effect of the background gas pressure on the plasma plume of the ablated Au nanoparticles was investigated in details. Morphology of Au nanoparticle thin films was investigated by means of atomic force microscopy (AFM) technique. Absorption spectra of Au nanoparticles were examined by using UV-Vis spectrometry. Extinction spectra of Au nanoparticles were calculated by using metallic nano particles boundary element method (MNPBEM) simulation programme. Both experimental spectra and simulation data for Au nanoparticles were obtained and compared in this work. It was concluded that they are also in good agreement with literature data. The measurements and the simulation results showed that localized surface plasmon resonance (LSPR) peaks for Au nanoparticles were located in the near infrared region (NIR) because of the larger size of the disk-like shape of Au nanoparticles, and the near-field coupling between Au nanoparticles. It was demonstrated that as the ambient gas (Ar) pressure was increased, the size and the density of Au nanoparticles on the substrate were decreased and the LSPR peak shifts toward the short wavelength region in the spectrum. This shift has been explained by the changes in the morphology of produced thin films

Utilizing Gold Nanoparticle Decoration for Enhanced UV Photodetection in CdS Thin Films Fabricated by Pulsed Laser Deposition: Exploiting Plasmon-Induced Effects

UV sensors hold significant promise for various applications in both military and civilian domains. However, achieving exceptional detectivity, responsivity, and rapid rise/decay times remains a notable challenge. In this study, we address this challenge by investigating the photodetection properties of CdS thin films and the influence of surface-deposited gold nanoparticles (AuNPs) on their performance. CdS thin films were produced using the pulsed laser deposition (PLD) technique on glass substrates, with CdS layers at a 100, 150, and 200 nm thickness. Extensive characterization was performed to evaluate the thin films’ structural, morphological, and optical properties. Photodetector devices based on CdS and AuNPs/CdS films were fabricated, and their performance parameters were evaluated under 365 nm light illumination. Our findings demonstrated that reducing CdS layer thickness enhanced performance concerning detectivity, responsivity, external quantum efficiency (EQE), and photocurrent gain. Furthermore, AuNP deposition on the surface of CdS films exhibited a substantial influence, especially on devices with thinner CdS layers. Among the configurations, AuNPs/CdS(100 nm) demonstrated the highest values in all evaluated parameters, including detectivity (1.1×1012 Jones), responsivity (13.86 A/W), EQE (47.2%), and photocurrent gain (9.2)

Microstrain effects of laser-ablated Au nanoparticles in enhancing CZTS-based 1 Sun photodetector devices

Copper zinc tin sulfide (CZTS) thin films were synthesized on soda lime glass using pulsed laser deposition (PLD) at room temperature. Introducing gold nanoparticles (AuNPs) in a sandwich structure led to increased CZTS particle size and a shift in the localized surface plasmon resonance (LSPR) peak of the AuNPs, influenced by different laser energy levels. The absorption measurements revealed intriguing behavior across the visible and near-infrared (NIR) regions, making these films appealing for 1 Sun photodetectors. Furthermore, the presence of AuNPs in the sandwich structure reduced microstrain effects, measuring 1.94 × 10−3 compared to 3.38 × 10−3 in their absence. This reduction directly enhances carrier transport, which is particularly beneficial for accelerating the performance of photodetector devices. This effect of AuNPs also contributed to higher dielectric coefficients, further improving the photodetector performance. Under 1 Sun illumination conditions, this enhancement resulted in a rapid rising time of 95.4 ms, showcasing the potential for faster photodetection.Dynamics of Micro and Nano System