Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs

The relative importance of heavy-ion interaction with the oxide, charge ionized in the epilayer, and charge ionized in the drain substrate, on the bias for SEGR failure in vertical power MOSFETs is experimentally investigated. The results indicate that both the charge ionized in the epilayer and the ion atomic number are important parameters of SEGR failure. Implications on SEGR hardness assurance are discussed

The role of stellar collisions for the formation of massive stars

We use direct N-body simulations of gas embedded star clusters to study the importance of stellar collisions for the formation and mass accretion history of high-mass stars. Our clusters start in virial equilibrium as a mix of gas and proto-stars. Proto-stars then accrete matter using different mass accretion rates and the amount of gas is reduced in the same way as the mass of stars increases. During the simulations we check for stellar collisions and we investigate the role of these collisions for the build-up of high-mass stars and the formation of runaway stars. We find that a significant number of collisions only occur in clusters with initial half-mass radii r_h < 0.1 pc. After emerging from their parental gas clouds, such clusters end up too compact compared to observed young, massive open clusters. In addition, collisions lead mainly to the formation of a single runaway star instead of the formation of many high mass stars with a broad mass spectrum. We therefore conclude that massive stars form mainly by gas accretion, with stellar collisions only playing a minor role if any at all. Collisions of stars in the pre-main sequence phase might however contribute to the formation of the most massive stars in the densest star clusters and possibly to the formation of intermediate-mass black holes with masses up to a few 100 Msun.Comment: 10 pages, 8 figures, MNRAS in pres

Numerical modeling of the multi-stage Stern\unicode{x2013}Gerlach experiment by Frisch and Segr\`e using co-quantum dynamics via the Schr\"odinger equation

We use a theory termed co-quantum dynamics (CQD) to numerically model spin flip in the multi-stage Stern\unicode{x2013}Gerlach (SG) experiment conducted by R. Frisch and E. Segr\`e. This experiment consists of two Stern\unicode{x2013}Gerlach apparatuses separated by an inner rotation chamber that varies the fraction of spin flip. To this day, quantum mechanical treatments inadequately predict the Frisch\unicode{x2013}Segr\`e experiment. Here, we account for electron-nuclear interactions according to CQD and solve the associated Schr\"odinger equation. Our simulation outcome agrees with the Frisch\unicode{x2013}Segr\`e experimental observation and supports CQD as a potential model for electron spin evolution and collapse.Comment: 13 pages, 3 figure

Single Event Effects in the Pixel readout chip for BTeV

In future experiments the readout electronics for pixel detectors is required to be resistant to a very high radiation level. In this paper we report on irradiation tests performed on several preFPIX2 prototype pixel readout chips for the BTeV experiment exposed to a 200 MeV proton beam. The prototype chips have been implemented in commercial 0.25 um CMOS processes following radiation tolerant design rules. The results show that this ASIC design tolerates a large total radiation dose, and that radiation induced Single Event Effects occur at a manageable level.Comment: 15 pages, 6 Postscript figure

Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments

The radiation hardness of commercial Silicon Carbide and Gallium Nitride power MOSFETs is presented in this paper, for Total Ionizing Dose effects and Single Event Effects, under gamma, neutrons, protons and heavy ions. Similar tests are discussed for commercial DC-DC converters, also tested in operation under magnetic field

Numerical modeling of the multi-stage Stern\unicode{x2013}Gerlach experiment by Frisch and Segr\`e using co-quantum dynamics via the Bloch equation

We numerically study the spin flip in the Frisch\unicode{x2013}Segr\`e experiment, the first multi-stage Stern\unicode{x2013}Gerlach experiment, within the context of the novel co-quantum dynamics theory. We model the middle stage responsible for spin rotation by sampling the atoms with the Monte Carlo method and solving the dynamics of the electron and nuclear magnetic moments numerically according to the Bloch equation. Our results show that, without using any fitting parameters, the co-quantum dynamics closely reproduces the experimental observation reported by Frisch and Segr\`e in 1933, which has so far lacked theoretical predictions.Comment: 9 pages, 6 figure

Mechanisms of heavy-ion induced gate rupture in thin oxides

Single event gate rupture (SEGR) is a catastrophic failure mode that occurs in dielectric materials that are struck by energetic heavy ions while biased under a high electric field condition. SEGR can reduce the critical electric field to breakdown to less than half the value observed in normal voltage ramp reliability tests. As electric fields in gate oxides increase to greater than 5 MV/cm in advanced MOS technologies, the impact of SEGR on the reliability of space based electronics must be assessed. In this summary, the authors explore the nature of SEGR in oxides with thickness from 7 nm to less than 5 nm, where soft breakdown is often observed during traditional reliability tests. They discuss the possible connection between the present understanding of SEGR and voltage stress breakdown models

Single-Event Gate Rupture in Power MOSFETs: A New Radiation Hardness Assurance Approach

Almost every space mission uses vertical power metal-semiconductor-oxide field-effect transistors (MOSFETs) in its power-supply circuitry. These devices can fail catastrophically due to single-event gate rupture (SEGR) when exposed to energetic heavy ions. To reduce SEGR failure risk, the off-state operating voltages of the devices are derated based upon radiation tests at heavy-ion accelerator facilities. Testing is very expensive. Even so, data from these tests provide only a limited guide to on-orbit performance. In this work, a device simulation-based method is developed to measure the response to strikes from heavy ions unavailable at accelerator facilities but posing potential risk on orbit. This work is the first to show that the present derating factor, which was established from non-radiation reliability concerns, is appropriate to reduce on-orbit SEGR failure risk when applied to data acquired from ions with appropriate penetration range. A second important outcome of this study is the demonstration of the capability and usefulness of this simulation technique for augmenting SEGR data from accelerator beam facilities. The mechanisms of SEGR are two-fold: the gate oxide is weakened by the passage of the ion through it, and the charge ionized along the ion track in the silicon transiently increases the oxide electric field. Most hardness assurance methodologies consider the latter mechanism only. This work demonstrates through experiment and simulation that the gate oxide response should not be neglected. In addition, the premise that the temporary weakening of the oxide due to the ion interaction with it, as opposed to due to the transient oxide field generated from within the silicon, is validated. Based upon these findings, a new approach to radiation hardness assurance for SEGR in power MOSFETs is defined to reduce SEGR risk in space flight projects. Finally, the potential impact of accumulated dose over the course of a space mission on SEGR susceptibility is explored. SEGR evaluation of gamma-irradiated power MOSFETs suggests a non-significant SEGR susceptibility enhancement due to accumulated dose from gamma rays. During SEGR testing, an unexpected enhanced dose effect from heavy-ion irradiation was detected. We demonstrate that this effect could be due to direct ionization by two or more ions at the same channel location. The probability on-orbit for such an occurrence is near-zero given the low heavy-ion fluence over a typical mission lifetime, and did not affect SEGR susceptibility. The results of this work can be used to bound the risk of SEGR in power MOSFETs considered for insertion into spacecraft and instruments

The Tenth Article of Ettore Majorana

This year is the centenary of the birth of Ettore Majorana, one of the major Italian physicists of all times. In this note we briefly sketch a few biographical details about Ettore Majorana and introduce and discuss the main points of Majorana's 10th article. In his article Majorana explicitly considers quantum mechanics as an irreducible statistical theory because the theory is not able to describe the time evolution of a single particle or atom in a precise environment at a deterministic level. This lack of determinism at the level of an elementary physical system motivated him to suggest a formal analogy between statistical laws observed in physics and in the social sciences. We hope the occasion of the centenary of the birth of Ettore Majorana will be useful to remember and to reconsider not only his exceptional achievements in theoretical physics but also his fresh and original views on the role of statistical laws in physics and in other disciplines such as the social sciences.Comment: 3 pages, to appear in Europhysics News 37/4 July/August 200

The influence of gas expulsion and initial mass-segregation on the stellar mass-function of globular star clusters

Recently de Marchi, Paresce & Pulone (2007) studied a sample of twenty globular clusters and found that all clusters with high concentrations have steep stellar mass-functions while clusters with low concentration have comparatively shallow mass-functions. No globular clusters were found with a flat mass-function and high concentration. This seems curious since more concentrated star clusters are believed to be dynamically more evolved and should have lost more low-mass stars via evaporation, which would result in a shallower mass-function in the low-mass part. We show that this effect can be explained by residual-gas expulsion from initially mass-segregated star clusters, and is enhanced further through unresolved binaries. If gas expulsion is the correct mechanism to produce the observed trend, then observation of these parameters would allow to constrain cluster starting conditions such as star formation efficiency and the time-scale of gas expulsion.Comment: accepted for publication in MNRAS, 10 pages, 6 figure