Recommended reading list of early publications on atomic layer deposition-Outcome of the "Virtual Project on the History of ALD"

Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and developed independently, at least twice, under different names: atomic layer epitaxy (ALE) and molecular layering. ALE, dating back to 1974 in Finland, has been commonly known as the origin of ALD, while work done since the 1960s in the Soviet Union under the name "molecular layering" (and sometimes other names) has remained much less known. The virtual project on the history of ALD (VPHA) is a volunteer-based effort with open participation, set up to make the early days of ALD more transparent. In VPHA, started in July 2013, the target is to list, read and comment on all early ALD academic and patent literature up to 1986. VPHA has resulted in two essays and several presentations at international conferences. This paper, based on a poster presentation at the 16th International Conference on Atomic Layer Deposition in Dublin, Ireland, 2016, presents a recommended reading list of early ALD publications, created collectively by the VPHA participants through voting. The list contains 22 publications from Finland, Japan, Soviet Union, United Kingdom, and United States. Up to now, a balanced overview regarding the early history of ALD has been missing; the current list is an attempt to remedy this deficiency. (C) 2016 Author(s).Peer reviewe

ALD pour les cellules photovoltaïques

International audienceThis article is dedicated to the applications of Atomic Layer Deposition (ALD) to the field of photovoltaics (PV). After a brief review of the PV conversion and its issues, the main industrial use of ALD to PV (passivation layers on 1 st generation crystalline silicon solar cells), as well as various examples of applications for the 2 nd and 3 rd solar cell generations are presented. They illustrate the various advantages (uniformity, conformity of ultra-thin layers, material engineering) and the limitations (deposition rate) of ALD for the development of efficient solar cells.Dans cet article sont exposées les applications de la technique de dépôt de couches minces ALD (Atomic Layer Deposition) au domaine du photovoltaïque (PV). À l'issue d'un bref rappel sur la conversion PV et ses enjeux, la principale application industrielle de l'ALD au PV (couches de passivation pour les cellules solaires de 1 re génération en silicium cristallin) ainsi que différents exemples d'applications aux cellules de 2 e et 3 e générations sont présentés. Ils illustrent les différents atouts (uniformité, conformité de couches ultra-minces, ingénierie de matériaux) et limitations (vitesse de dépôt) de l'ALD pour le développement de cellules photovoltaïques performantes

ALD pour les cellules photovoltaïques

International audienceThis article is dedicated to the applications of Atomic Layer Deposition (ALD) to the field of photovoltaics (PV). After a brief review of the PV conversion and its issues, the main industrial use of ALD to PV (passivation layers on 1 st generation crystalline silicon solar cells), as well as various examples of applications for the 2 nd and 3 rd solar cell generations are presented. They illustrate the various advantages (uniformity, conformity of ultra-thin layers, material engineering) and the limitations (deposition rate) of ALD for the development of efficient solar cells.Dans cet article sont exposées les applications de la technique de dépôt de couches minces ALD (Atomic Layer Deposition) au domaine du photovoltaïque (PV). À l'issue d'un bref rappel sur la conversion PV et ses enjeux, la principale application industrielle de l'ALD au PV (couches de passivation pour les cellules solaires de 1 re génération en silicium cristallin) ainsi que différents exemples d'applications aux cellules de 2 e et 3 e générations sont présentés. Ils illustrent les différents atouts (uniformité, conformité de couches ultra-minces, ingénierie de matériaux) et limitations (vitesse de dépôt) de l'ALD pour le développement de cellules photovoltaïques performantes

Atomic layer deposition of copper sulfide thin films

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In Situ Microgravimetric Study of Ion Exchanges in the Ternary Cu-In-S System Prepared by Atomic Layer Deposition

International audienceReaction mechanisms during the growth of multinary compounds by atomic layer deposition can be complex, especially for sulfide materials. For instance, the deposition of copper indium disulfide (CuInS2) shows a non-direct correlation between the cycle ratio, the growth per cycle of each binary growth cycles, i.e., CuxS and In2S3, and the film composition. This evidences side reactions that compete with the direct Atomic Layer Deposition (ALD) growth reactions and makes the deposition of large films very challenging. To develop a robust upscalable recipe, it is essential to understand the chemical surface reactions. In this study, reaction mechanisms in the Cu-In-S ternary system were investigated in-situ by using a quartz crystal microbalance system to monitor mass variations. Pure binary indium sulfide (In2S3) and copper sulfide (CuxS) thin film depositions on Al2O3 substrate were first studied. Then, precursors were transported to react on CuxS and In2S3 substrates. In this paper, gas-phase ion exchanges are discussed based on the recorded mass variations. A cation exchange between the copper precursor and the In2S3 is highlighted, and a solution to reduce it by controlling the thickness deposited for each stack of binary materials during the CuInS2 deposition is finally proposed

Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement

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Plasma-enhanced atomic layer deposition of highly transparent zinc oxy-sulfide thin films

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Synthesis and structural chemistry of oxazolinyl-carbene copper(I) complexes

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Atomic layer deposition of zinc indium sulfide films: Mechanistic studies and evidence of surface exchange reactions and diffusion processes

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Toward an all-Atomic Layer Deposition (ALD) process for Cu(In,Ga)(S,Se)2 (CIGS)-type solar cell

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