The overmassive black hole in NGC 1277: new constraints from molecular gas kinematics

We report the detection of CO(1-0) emission from NGC 1277, a lenticular galaxy in the Perseus Cluster. NGC 1277 has previously been proposed to host an overmassive black hole (BH) compared to the galaxy bulge luminosity (mass), based on stellar-kinematic measurements. The CO(1-0) emission, observed with the IRAM Plateau de Bure Interferometer (PdBI) using both, a more compact (2.9-arcsec resolution) and a more extended (1-arcsec resolution) configuration, is likely to originate from the dust lane encompassing the galaxy nucleus at a distance of 0.9 arcsec (~320 pc). The double-horned CO(1-0) profile found at 2.9-arcsec resolution traces $1.5\times 10^8\ M_\odot$ of molecular gas, likely orbiting in the dust lane at $\sim 550\ \mathrm{km\ s^{-1}}$, which suggests a total enclosed mass of$\sim 2\times 10^{10}\ M_\odot$. At 1-arcsec resolution, the CO(1-0) emission appears spatially resolved along the dust lane in east-west direction, though at a low signal-to-noise ratio. In agreement with the previous stellar-kinematic measurements, the CO(1-0) kinematics is found to be consistent with an$\sim 1.7\times 10^{10}\ M_\odot$BH for a stellar mass-to-light ratio of$M/L_V=6.3$, while a less massive BH of$\sim 5\times 10^{9}\ M_\odot$is possible when assuming a larger$M/L_V=10$. While the molecular gas reservoir may be associated with a low level of star formation activity, the extended 2.6-mm continuum emission is likely to originate from a weak AGN, possibly characterized by an inverted radio-to-millimetre spectral energy distribution. Literature radio and X-ray data indicate that the BH in NGC 1277 is also overmassive with respect to the Fundamental Plane of BH activity.Comment: 15 pages, 13 figures; accepted for publication in MNRAS on 20 January 2016; updated version including minor changes and note added in proo

Energetics of the molecular gas in the H_2 luminous radio galaxy 3C 326: Evidence for negative AGN feedback

We present a detailed analysis of the gas conditions in the H_2 luminous radio galaxy 3C 326 N at z ~ 0.1, which has a low star-formation rate (SFR ~ 0.07 M_⊙ yr^(−1)) in spite of a gas surface density similar to those in starburst galaxies. Its star-formation efficiency is likely a factor ~ 10−50 lower than those of ordinary star-forming galaxies. Combining new IRAM CO emission-line interferometry with existing Spitzer mid-infrared spectroscopy, we find that the luminosity ratio of CO and pure rotational H_2 line emission is factors 10−100 lower than what is usually found. This suggests that most of the molecular gas is warm. The Na D absorption-line profile of 3C 326 N in the optical suggests an outflow with a terminal velocity of ~−1800 km s^(−1) and a mass outflow rate of 30−40 M_⊙ yr^(−1), which cannot be explained by star formation. The mechanical power implied by the wind, of order 10^(43) erg s^(−1), is comparable to the bolometric luminosity of the emission lines of ionized and molecular gas. To explain these observations, we propose a scenario where a small fraction of the mechanical energy of the radio jet is deposited in the interstellar medium of 3C 326 N, which powers the outflow, and the line emission through a mass, momentum and energy exchange between the different gas phases of the ISM. Dissipation times are of order 10^(7−8) yrs, similar or greater than the typical jet lifetime. Small ratios of CO and PAH surface brightnesses in another 7 H_2 luminous radio galaxies suggest that a similar form of AGN feedback could be lowering star-formation efficiencies in these galaxies in a similar way. The local demographics of radio-loud AGN suggests that secular gas cooling in massive early-type galaxies of ≥ 10^(11) M_⊙ could generally be regulated through a fundamentally similar form of “maintenance-phase” AGN feedback

Precursors’ order effect on the properties of sulfurized Cu2ZnSnS4 thin films

A dc magnetron sputtering-based method to grow high-quality Cu2ZnSnS4 (CZTS) thin films, to be used as an absorber layer in solar cells, is being developed. This method combines dc sputtering of metallic precursors with sulfurization in S vapour and with post-growth KCN treatment for removal of possible undesired Cu2−xS phases. In this work, we report the results of a study of the effects of changing the precursors’ deposition order on the final CZTS films’ morphological and structural properties. The effect of KCN treatment on the optical properties was also analysed through diffuse reflectance measurements. Morphological, compositional and structural analyses of the various stages of the growth have been performed using stylus profilometry, SEM/EDS analysis, XRD and Raman Spectroscopy. Diffuse reflectance studies have been done in order to estimate the band gap energy of the CZTS films. We tested two different deposition orders for the copper precursor, namely Mo/Zn/Cu/Sn and Mo/Zn/Sn/Cu. The stylus profilometry analysis shows high average surface roughness in the ranges 300–550 nm and 230–250 nm before and after KCN treatment, respectively. All XRD spectra show preferential growth orientation along (1 1 2) at 28.45◦. Raman spectroscopy shows main peaks at 338 cm−1 and 287 cm−1 which are attributed to Cu2ZnSnS4. These measurements also confirm the effectiveness of KCN treatment in removing Cu2−xS phases. From the analysis of the diffuse reflectance measurements the band gap energy for both precursors’ sequences is estimated to be close to 1.43 eV. The KCN-treated films show a better defined absorption edge; however, the band gap values are not significantly affected. Hot point probe measurements confirmed that CZTS had p-type semiconductor behaviour and C–V analysis was used to estimate the majority carrier density giving a value of 3.3 × 1018 cm−3

Growth and Raman scattering characterization of Cu2ZnSnS4 thin films

In the present work we report the results of the growth, morphological and structural characterization of Cu2ZnSnS4 (CZTS) thin films prepared by sulfurization of DC magnetron sputtered Cu/Zn/Sn precursor layers. The adjustment of the thicknesses and the properties of the precursors were used to control the final composition of the films. Its properties were studied by SEM/EDS, XRD and Raman scattering. The influence of the sulfurization temperature on the morphology, composition and structure of the films has been studied. With the presented method we have been able to prepare CZTS thin films with the kesterite structure

Assessment of the potential of tin sulphide thin films prepared by sulphurization of metallic precursors as cell absorbers

In this work, SnxSy thin films have been grown on soda-lime glass substrates by sulphurization of metallic precursors in a nitrogen plus sulphur vapour atmosphere. Different sulphurization temperatures were tested, ranging from 300 °C to 520 °C. The resulting phases were structurally investigated by X-Ray Diffraction and Raman spectroscopy. Composition was studied using Energy Dispersive Spectroscopy being then correlated with the sulphurization temperature. Optical measurements were performed to obtain transmittance and reflectance spectra, from which the energy band gaps, were estimated. The values obtained were 1.17 eV for the indirect transition and for the direct transition the values varied from 1.26 eV to 1.57 eV. Electrical characterization using Hot Point Probe showed that all samples were p-type semiconductors. Solar cells were built using the structure: SLG/Mo/SnxSy/CdS/ZnO:Ga and the best result for solar cell efficiency was 0.17%

Mo bilayer for thin film photovoltaics revisited

Thin film solar cells based on Cu(In,Ga)Se2 as an absorber layer use Mo as the back contact. This metal is widely used in research and in industry but despite this, there are only a few published studies on the properties of Mo. Properties such as low resistivity and good adhesion to soda lime glass are hard to obtain at the same time. These properties are dependent on the deposition conditions and are associated with the overall stress state of the film. In this report, a study of the deposition of a Mo bilayer is carried out by analysing first single and then bilayers. The best properties of the bilayer were achieved when the bottom layer was deposited at 10 × 10−3 mbar with a thickness of 500 nm and the top layer deposited at 1 × 10−3 mbar with a thickness of 300 nm. The films deposited under these conditions showed good adhesion and a sheet resistivity lower than 0.8

Growth and Characterization of SnSe2 by selenization of sputtered metallic precursors

In the present work, we present a process to grow tin diselenide thin films by selenization at a maximum temperature of 470 ºC, of tin metallic precursor layers deposited by dc magnetron sputtering. For this maximum temperature, disklike grain morphologies were observed. Prominent XRD reflections at 2θ= 30.75º, 40.10º and 47.72º and vibration modes located at 119 cm-1 and 185 cm-1 were observed. These results allowed concluding that the dominant phase is SnSe2. The composition analysis, done by energy dispersive spectroscopy (EDS), showed that the films were close to being stoichiometric SnSe2 with a Se to Sn ratio of 1.95. Photoluminescence characterization was performed and revealed a dominant band at 0.874 eV and two other bands at ~0.74 and 1.08 eV with a lower relative intensities. The observed radiative transitions depend critically on the temperature.N/

On the identification of Sb2Se3 using Raman scattering

Robust evidences are presented that show that the Raman mode close to 250 cm-1 in Sb2Se3 thin films does not belong to this binary compound. A study of the Raman spectrum power dependency revealed the formation of Sb2O3 for high values of power excitation when these measurements are done in normal atmospheric conditions. In order to complement this study, Sb2Se3 thin films were annealed to mimic the thermal conditions of Raman measurements and characterized by X-ray diffraction technique. These measurements showed that the compound Sb2Se3 can be replaced by Sb2O3 under those conditions and a heat-assisted chemical process explains these findings. Furthermore, it is shown what the Raman conditions that are needed for correct measurements to be performed.publishe

Exploiting the Optical Limits of Thin‐Film Solar Cells: A Review on Light Management Strategies in Cu(In,Ga)Se 2

Light management strategies are of utmost importance to allow Cu(In,Ga)Se2 (CIGS) technology market expansion, as it would enable a conversion efficiency boost as well as thinner absorber layers, increasing sustainability and reducing production costs. However, fabrication and architecture constraints hamper the direct transfer of light management architectures from other photovoltaic technologies. The demand for light management in thin and ultrathin CIGS cells is analyzed by a critical description of the optical loss mechanisms in these devices. Three main pathways to tackle the optical losses are identified: front light management architectures that assist for an omnidirectional low reflection; rear architectures that enable an enhanced optical path length; and unconventional spectral conversion strategies for full spectral harvesting. An outlook over the challenges and developments of light management architectures is performed, establishing a research roadmap for future works in light management for CIGS technology. Following the extensive review, it is expected that combining antireflection, light trapping, and conversion mechanisms, a 27% CIGS solar cell can be achieved.Fundação para a Ciência e a Tecnologia (FCT) and Fundo Social Europeu (FSE) are acknowledged through the projects IF/00133/2015, UIDB/ 50025/2020, UIDP/50025/2020, UIDB/04730/2020, UIDP/04730/2020, and DFA/BD/4564/2020. This research was also supported by NovaCell—Development of novel Ultrathin Solar Cell Architectures for low-light, low-cost, and flexible optoelectronic device project (028075) cofunded by FCT and ERDF through COMPETE2020. This research was supported by InovSolarCells–Development of innovative nanostructured dielectric materials for interface passivation in thin-film solar cells project (029696) cofunded by FCT and ERDF through COMPETE2020. The authors acknowledge the financial support of the project Baterias 2030, with the reference POCI-01-0247-FEDER-046109, cofunded by Operational Programme for Competitiveness and Internationalization (COMPETE 2020), under the Portugal 2020 Partnership Agreement, through the European Regional Development Fund (ERDF)info:eu-repo/semantics/publishedVersio

In-depth inhomogeneities in CIGS solar cells: identifying regions for performance limitations by PIXE and EBS

When considering materials to be used as active layers in solar cells, an important required parameter is the proper knowledge of their elemental composition. It should be heavily controlled during growth in order to obtain the desired bandgap and to decrease recombination defects and then increase the solar cell electrical performance. Ion beam analytical techniques and, in particular particle-induced X-ray emission (PIXE) and elastic backscattering spectrometry (EBS), are quite suitable to determine the thickness and composition of such active layers. Furthermore, if these techniques are performed using a nuclear microprobe, lateral and in-depth inhomogeneities can be clearly observed from 2D maps. In many cases, composition variations can be detected from the classical 2D maps obtained from the PIXE spectra. In this work, it is shown how the in-depth variations can also be studied when considering 2D maps reconstructed from the EBS spectra. Such variations are derived from processing conditions and can be related to: i) composition, ii) thickness, iii) roughness, iv) other non-trivial issues. Examples obtained on Cu(In,Ga)Se2 based cells are presented and discussed. Furthermore, the combination of ion beam analytical techniques such as PIXE and EBS is shown to be a competitive and alternative method to those more used and established techniques such as X-ray fluorescence for checking the average composition of the solar cells active layers or SIMS for the determination of elemental depth profile.publishe