Formation of the physical vapor deposited CdS Cu In,Ga Se2 interface in highly efficient thin film solar cells

We report on the buffer absorber interface formation in highly efficient 14.5 , AM1.5 ZnO CdS Cu In,Ga Se2 solar cells with a physical vapor deposited CdS buffer. For Se decapped Cu In,Ga Se2 CIGSe absorbers we observe sulfur passivation of the CIGSe grain boundaries during CdS growth and at the interface a thermally stimulated formation of a region with a higher band gap than that of the absorber bulk, determining the height of the potential barrier at the CdS CIGSe interface. For air exposed CIGSe samples the grain boundary passivation is impeded by a native oxide adsorbate layer at the CIGSe surface determining the thermal stability of the potential barrier heigh

Reliable wet-chemical cleaning of natively oxidized high-efficiency Cu(In,Ga)Se2 thin-film solar cell absorbers

Currently, Cu-containing chalcopyrite-based solar cells provide the highest conversion efficiencies among all thin-film photovoltaic (PV) technologies. They have reached efficiency values above 20%, the same performance level as multi-crystalline silicon-wafer technology that dominates the commercial PV market. Chalcopyrite thin-film heterostructures consist of a layer stack with a variety of interfaces between different materials. It is the chalcopyrite/buffer region (forming the p-n junction), which is of crucial importance and therefore frequently investigated using surface and interface science tools, such as photoelectron spectroscopy and scanning probe microscopy. To ensure comparability and validity of the results, a general preparation guide for “realistic” surfaces of polycrystalline chalcopyrite thin films is highly desirable. We present results on wet-chemical cleaning procedures of polycrystalline Cu(In1-xGax)Se2 thin films with an average x = [Ga]/([In] + [Ga]) = 0.29, which were exposed to ambient conditions for different times. The hence natively oxidized sample surfaces were etched in KCN- or NH3-based aqueous solutions. By x-ray photoelectron spectroscopy, we find that the KCN treatment results in a chemical surface structure which is – apart from a slight change in surface composition – identical to a pristine as-received sample surface. Additionally, we discover a different oxidation behavior of In and Ga, in agreement with thermodynamic reference data, and we find indications for the segregation and removal of copper selenide surface phases from the polycrystalline material

Quantitative Proteomic Approach Identifies Vpr Binding Protein as Novel Host Factor Supporting Influenza A Virus Infections in Human Cells

Influenza A virus infections are a major cause for respiratory disease in humans, which affects all age groups and contributes substantially to global morbidity and mortality. IAV have a large natural host reservoir in avian species. However, many avian IAV strains lack adaptation to other hosts and hardly propagate in humans. While seasonal or pandemic influenza A virus (IAV) strains replicate efficiently in permissive human cells, many avian IAV cause abortive non-productive infections in these hosts despite successful cell entry. However, the precise reasons for these differential outcomes are poorly defined. We hypothesized that the distinct course of an IAV infection with a given virus strain is determined by the differential interplay between specific host and viral factors. By using Spike-in SILAC mass spectrometry-based quantitative proteomics we characterized sets of cellular factors whose abundance is specifically up- or down-regulated in the course of permissive vs. non-permissive IAV infection, respectively. This approach allowed for the definition and quantitative comparison of about 3500 proteins in human lung epithelial cells in response to seasonal or low-pathogenic avian H3N2 IAV. Many identified proteins were similarly regulated by both virus strains, but also 16 candidates with distinct changes in permissive vs. non-permissive infection were found. RNAi-mediated knockdown of these differentially regulated host factors identified Vpr binding protein (VprBP) as pro-viral host factor since its down-regulation inhibited efficient propagation of seasonal IAV while over-expression increased viral replication of both seasonal and avian IAV. These results not only show that there are similar differences in the overall changes during permissive and non-permissive imfluenza virus infections, but also provide a basis to evaluate VprBP as novel anti-IAV drug target

Voids in kesterites and the influence of lamellae preparation by focused ion beam for transmission electron microscopy analyses

Kesterite solar cells based in Cu2ZnSnS4 and Cu2ZnSnSe4 are potential future candidates to be used in thin film solar cells. The technology still has to be developed to a great extent and for this to happen, high levels of confidence in the characterization methods are required so that improvements can be made on solid interpretations. In this study we show that the interpretations of one of the most used characterization techniques in kesterites, scanning transmission electron microscopy (STEM), might be affected by its specimen preparation when using focused ion beam (FIB). Using complementary measurements based on scanning electron microscopy and Raman scattering spectroscopy, compelling evidences show that secondary phases of ZnSe mixed in the bulk of Cu2ZnSnSe4 are the likely cause of the appearance of voids in the STEM lamellae. Sputtering simulations support this interpretation by showing that Zn in a ZnSe matrix is preferentially sputtered compared with any metal atom in a Cu2ZnSnSe4 matrix.publishe

Relaxation Effects in the Transition Temperature of Superconducting HgBa2CuO4+delta

In previous studies on a number of under- and overdoped high temperature superconductors, including YBa_{2}Cu_{3}O_{7-y} and Tl_{2}Ba_{2}CuO_{6+\delta}, the transition temperature T_c has been found to change with time in a manner which depends on the sample's detailed temperature and pressure history. This relaxation behavior in T_c is believed to originate from rearrangements within the oxygen sublattice. In the present high-pressure studies on HgBa_{2}CuO_{4+\delta} to 0.8 GPa we find clear evidence for weak relaxation effects in strongly under- and overdoped samples ($T_c\simeq 40 - 50 K$) with an activation energy $E_{A}(1 bar) \simeq 0.8 - 0.9 eV$. For overdoped HgBa_{2}CuO_{4+\delta} E_{A} increases under pressure more rapidly than previously observed for YBa_{2}Cu_{3}O_{6.41}, yielding an activation volume of +11 \pm 5 cm^{3}; the dependence of T_c on pressure is markedly nonlinear, an anomalous result for high-T_c superconductors in the present pressure range, giving evidence for a change in the electronic and/or structural properties near 0.4 GPa

High-pressure phase relations of Bi2_{2}Sr2_{2}CaCu2_{2}O8+δ_{8+\delta} single crystals

We have investigated the pressure dependence of the superconducting transition temperature $T_{c}$ up to 18 GPa of Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+\delta}$ single crystals ranging from the highly underdoped through the nearly optimally doped to the highly overdoped level. For all three samples studied, $T_{c}$ is found to increase initially and then saturate at a critical pressure $P_{c}$ but decrease modestly with further compression. Oxygen doping tends to reduce the increase in $T_{c}$ and $P_{c}$. A new high-pressure phase diagram between the saturated $T_{c}$ and $P_{c}$ is then obtained. Theoretical interpretation is given by using the competition between the hole carrier density and pairing interaction strength based on the high-pressure transport data of the resistivity and Hall coefficient in this system.Comment: 8 pages, 7 figures, to appear in Physical Review

Anomalously large oxygen-ordering contribution to the thermal expansion of untwinned YBa2Cu3O6.95 single crystals: a glass-like transition near room temperature

We present high-resolution capacitance dilatometry studies from 5 - 500 K of untwinned YBa2Cu3Ox (Y123) single crystals for x ~ 6.95 and x = 7.0. Large contributions to the thermal expansivities due to O-ordering are found for x ~ 6.95, which disappear below a kinetic glass-like transition near room temperature. The kinetics at this glass transition is governed by an energy barrier of 0.98 +- 0.07 eV, in very good agreement with other O-ordering studies. Using thermodynamic arguments, we show that O-ordering in the Y123 system is particularly sensitive to uniaxial pressure (stress) along the chain axis and that the lack of well-ordered chains in Nd123 and La123 is most likely a consequence of a chemical-pressure effect.Comment: 4 pages, 3 figures, submitted to PR

Integrated tunneling sensor for nanoelectromechanical systems

Transducers based on quantum mechanical tunneling provide an extremely sensitive sensor principle, especially for nanoelectromechanical systems. For proper operation a gap between the electrodes of below 1nm is essential, requiring the use of structures with a mobile electrode. At such small distances, attractive van der Waals and capillary forces become sizable, possibly resulting in snap-in of the electrodes. The authors present a comprehensive analysis and evaluation of the interplay between the involved forces and identify requirements for the design of tunnelingsensors. Based on this analysis, a tunnelingsensor is fabricated by Si micromachiningtechnology and its proper operation is demonstrated

Quantum Critical Point, Scaling, and Universality in High Tc [CaxLa(1-x)][Ba(2-c-x)La(c+x)]Cu3Oy

Using charge transport observations on sintered ceramic samples of CLBLCO, we failed to observe the Quantum Critical Point (QCP) where it is expected. Experimental data relating Cooper pair density, electrical conductivity, and superconductivity critical temperature suggest that Homes' relation might need a more specific definition of 'sigma'. Transport observations on YBCO single crystals will resolve this question.Comment: 5 pages, 3 figure

Forces from periodic charging of adsorbed molecules

In a recent publication [N. Kocic et al., Nano Lett. 15, 4406 (2015)], it was shown that gating of molecular levels in the field of an oscillating tip of an atomic force microscope can enable a periodic charging of individual molecules synchronized to the tip's oscillatory motion. Here we discuss further implications of such measurements, namely, how the force difference associated with the singleelectron charging manifests itself in atomic force microscopy images and how it can be detected as a function of tip-sample distance. Moreover, we discuss how the critical voltage for the chargestate transition depends on distance and how that relates to the local contact potential difference. These measurements allow also for an estimate of the absolute tip-sample distance