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Nonlocal dielectric function and nested dark excitons in MoS2
Their exceptional optical properties are a driving force for the persistent interest in atomically thin transition metal dichalcogenides such as MoS2. The optical response is dominated by excitons. Apart from the bright excitons, which directly couple to light, it has been realized that dark excitons, where photon absorption or emission is inhibited by the spin state or momentum mismatch, are decisive for many optical properties. However, in particular the momentum dependence is difficult to assess experimentally and often remains elusive or is investigated by indirect means. Here we study the momentum dependent electronic structure experimentally and theoretically. We use angle-resolved photoemission as a one-particle probe of the occupied valence band structure and electron energy loss spectroscopy as a two-particle probe of electronic transitions across the gap to benchmark a single-particle model of the dielectric function Ďľ(q, Ď) against momentum dependent experimental measurements. This ansatz captures key aspects of the data surprisingly well. In particular, the energy region where substantial nesting occurs, which is at the origin of the strong lightâmatter interaction of thin transition metal dichalcogenides and crucial for the prominent C-exciton, is described well and spans a more complex exciton landscape than previously anticipated. Its local maxima in (qâ 0,Ď) space can be considered as dark excitons and might be relevant for higher order optical processes. Our study may lead to a more complete understanding of the optical properties of atomically thin transition metal dichalcogenides
Electric-Field Gradient at Cd Impurities in In2o3. A FLAPW Study
We report an ab initio study of the electric-field gradient tensor (EFG) at
Cd impurities located at both inequivalent cationic sites in the semiconductor
In2O3. Calculations were performed with the FLAPW method, that allows us to
treat the electronic structure of the doped system and the atomic relaxations
introduced by the impurities in the host lattice in a fully self-consistent
way. From our results for the EFG (in excellent agreement with the
experiments), it is clear that the problem of the EFG at impurities in In2O3
cannot be described by the point-charge model and antishielding factors.Comment: 4 pages, 2 figures, and 2 table
Microduplications encompassing the Sonic hedgehog limb enhancer ZRS are associated with Haas-type polysyndactyly and Laurin-Sandrow syndrome
Laurin-Sandrow syndrome (LSS) is a rare autosomal dominant disorder characterized by polysyndactyly of hands and/or feet, mirror image duplication of the feet, nasal defects, and loss of identity between fibula and tibia. The genetic basis of LSS is currently unknown. LSS shows phenotypic overlap with Haas-type polysyndactyly (HTS) regarding the digital phenotype. Here we report on five unrelated families with overlapping microduplications encompassing the Sonic hedgehog (SHH) limb enhancer ZPA regulatory sequence (ZRS) on chromosome 7q36. Clinically, the patients show polysyndactyly phenotypes and various types of lower limb malformations ranging from syndactyly to mirror image polydactyly with duplications of the fibulae. We show that larger duplications of the ZRS region (>80 kb) are associated with HTS, whereas smaller duplications (<80 kb) result in the LSS phenotype. On the basis of our data, the latter can be clearly distinguished from HTS by the presence of mirror image polysyndactyly of the feet with duplication of the fibula. Our results expand the clinical phenotype of the ZRS-associated syndromes and suggest that smaller duplications (<80 kb) are associated with a more severe phenotype. In addition, we show that these small microduplications within the ZRS region are the underlying genetic cause of Laurin-Sandrow syndrome
The Physical Basis for Long-lived Electronic Coherence in Photosynthetic Light Harvesting Systems
The physical basis for observed long-lived electronic coherence in
photosynthetic light-harvesting systems is identified using an analytically
soluble model. Three physical features are found to be responsible for their
long coherence lifetimes: i) the small energy gap between excitonic states, ii)
the small ratio of the energy gap to the coupling between excitonic states, and
iii) the fact that the molecular characteristics place the system in an
effective low temperature regime, even at ambient conditions. Using this
approach, we obtain decoherence times for a dimer model with FMO parameters of
160 fs at 77 K and 80 fs at 277 K. As such, significant
oscillations are found to persist for 600 fs and 300 fs, respectively, in
accord with the experiment and with previous computations. Similar good
agreement is found for PC645 at room temperature, with oscillations persisting
for 400 fs. The analytic expressions obtained provide direct insight into the
parameter dependence of the decoherence time scales.Comment: 5 figures; J. Phys. Chem. Lett. (2011
Am. J. Hum. Genet.
Thrombocytopeniaâabsent radius (TAR) syndrome is characterized by hypomegakaryocytic thrombocytopenia and bilateral radial aplasia in the presence of both thumbs. Other frequent associations are congenital heart disease and a high incidence of cowâs milk intolerance. Evidence for autosomal recessive inheritance comes from families with several affected individuals born to unaffected parents, but several other observations argue for a more complex pattern of inheritance. In this study, we describe a common interstitial microdeletion of 200 kb on chromosome 1q21.1 in all 30 investigated patients with TAR syndrome, detected by microarray-based comparative genomic hybridization. Analysis of the parents revealed that this deletion occurred de novo in 25% of affected individuals. Intriguingly, inheritance of the deletion along the maternal line as well as the paternal line was observed. The absence of this deletion in a cohort of control individuals argues for a specific role played by the microdeletion in the pathogenesis of TAR syndrome. We hypothesize that TAR syndrome is associated with a deletion on chromosome 1q21.1 but that the phenotype develops only in the presence of an additional as-yet-unknown modifier (mTAR)
Key factors of ion induced nanopatterning
We have reported the dependence of projectile mass, chemical reactivity and
effect of molecular beams on the ion induced nano structure formation, when 8
keV He1+, N1+, O1+, Ar1+ atomic ions and 16 keV N21+ and O21+ molecular ions
are bombarded on the Si(100) surface at an incidence angle of 60^{\circ}.
Atomic force microscopy (AFM) measurement shows that the initiation and growth
of ripple structures are determined not only by the collision cascades but also
by the chemical reactivity and molecular state of the projectiles. This
experimental investigation explores the necessary requirements for ion induced
controlled nanopatterning
Intervalley scattering by acoustic phonons in two-dimensional MoS2 revealed by double-resonance Raman spectroscopy
Double-resonance Raman scattering is a sensitive probe to study the electron-phonon scattering pathways in crystals. For semiconducting two-dimensional transition-metal dichalcogenides, the double-resonance Raman process involves different valleys and phonons in the Brillouin zone, and it has not yet been fully understood. Here we present a multiple energy excitation Raman study in conjunction with density functional theory calculations that unveil the double-resonance Raman scattering process in monolayer and bulk MoS2. Results show that the frequency of some Raman features shifts when changing the excitation energy, and first-principle simulations confirm that such bands arise from distinct acoustic phonons, connecting different valley states. The double-resonance Raman process is affected by the indirect-to-direct bandgap transition, and a comparison of results in monolayer and bulk allows the assignment of each Raman feature near the M or K points of the Brillouin zone. Our work highlights the underlying physics of intervalley scattering of electrons by acoustic phonons, which is essential for valley depolarization in MoS2
Ragweed as an Example of Worldwide Allergen Expansion
<p/> <p>Multiple factors are contributing to the expansion of ragweed on a worldwide scale. This review seeks to examine factors that may contribute to allergen expansion with reference to ragweed as a well-studied example. It is our hope that increased surveillance for new pollens in areas not previously affected and awareness of the influence the changing environment plays in allergic disease will lead to better outcomes in susceptible patients.</p
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