Non-dipping nocturnal blood pressure and psychosis parameters in Parkinson disease

Conclusion: These results suggest that, among PD patients, a non-dipping circadian rhythm is associated with more severe symptoms of psychosis than is a dipping circadian rhythm. This association warrants further investigation

Room temperature emission at 1.6 µm from InGaAs quantum dots capped with GaAsSb

Room temperature photoluminescence at 1.6 µm is demonstrated from InGaAs quantum dots capped with an 8 nm GaAsSb quantum well. Results obtained from various sample structures are compared, including samples capped with GaAs. The observed redshift in GaAsSb capped samples is attributed to a type II band alignment and to a beneficial modification of growth kinetics during capping due to the presence of Sb. The sample structure is discussed on the basis of transmission electron microscopy results.This work was supported by the Spanish MCyT under NANOSELF project TIC2002-04096, by CAM project GR/MAT/0726/2004, by the SANDiE Network of excellence (Contract No. NMP4-CT-2004-500101) and the Junta de Andalucía (Group Tep-0120). J.M.R. acknowledges support through a Ramón y Cajal grant. TEM measurements were carried out at DME-SCCYT, UCA.Peer reviewe

New Measurement of the 2S Hyperfine Interval in Atomic Hydrogen

An optical measurement of the 2S hyperfine interval in atomic hydrogen using two-photon spectroscopy of the 1S-2S transition gives a value of 177 556 834.3(6.7) Hz. The uncertainty is 2.4 times smaller than achieved by our group in 2003 and more than 4 times smaller than for any independent radio-frequency measurement. The specific combination of the 2S and 1S hyperfine intervals predicted by QED theory $D_{21}=8 f_{\rm HFS}({2S}) - f_{\rm HFS}({1S})=48 953(3)$ Hz is in good agreement with the value of 48 923(54) Hz obtained from this experiment.Comment: 4 pages, 4 figure

Pathway to the PiezoElectronic Transduction Logic Device

The information age challenges computer technology to process an exponentially increasing computational load on a limited energy budget - a requirement that demands an exponential reduction in energy per operation. In digital logic circuits, the switching energy of present FET devices is intimately connected with the switching voltage, and can no longer be lowered sufficiently, limiting the ability of current technology to address the challenge. Quantum computing offers a leap forward in capability, but a clear advantage requires algorithms presently developed for only a small set of applications. Therefore, a new, general purpose, classical technology based on a different paradigm is needed to meet the ever increasing demand for data processing.Comment: in Nano Letters (2015

Optical Clocks in Space

The performance of optical clocks has strongly progressed in recent years, and accuracies and instabilities of 1 part in 10^18 are expected in the near future. The operation of optical clocks in space provides new scientific and technological opportunities. In particular, an earth-orbiting satellite containing an ensemble of optical clocks would allow a precision measurement of the gravitational redshift, navigation with improved precision, mapping of the earth's gravitational potential by relativistic geodesy, and comparisons between ground clocks.Comment: Proc. III International Conference on Particle and Fundamental Physics in Space (SpacePart06), Beijing 19 - 21 April 2006, to appear in Nucl. Phys.

New Limits to the Drift of Fundamental Constants from Laboratory Measurements

We have remeasured the absolute $1S$-$2S$ transition frequency $\nu_{\rm {H}}$ in atomic hydrogen. A comparison with the result of the previous measurement performed in 1999 sets a limit of $(-29\pm 57)$ Hz for the drift of $\nu_{\rm {H}}$ with respect to the ground state hyperfine splitting $\nu_{{\rm {Cs}}}$ in $^{133}$Cs. Combining this result with the recently published optical transition frequency in $^{199}$Hg$^+$ against $\nu_{\rm {Cs}}$ and a microwave $^{87}$Rb and $^{133}$Cs clock comparison, we deduce separate limits on $\dot{\alpha}/\alpha = (-0.9\pm 2.9)\times 10^{-15}$ yr$^{-1}$ and the fractional time variation of the ratio of Rb and Cs nuclear magnetic moments $\mu_{\rm {Rb}}/\mu_{\rm {Cs}}$ equal to $(-0.5 \pm 1.7)\times 10^{-15}$ yr$^{-1}$. The latter provides information on the temporal behavior of the constant of strong interaction.Comment: 4 pages, 3 figures, LaTe

High-Performance Air-Stable n-Type Carbon Nanotube Transistors with Erbium Contacts

O ver the past few decades, the continued down-scaling of the physical dimensions of silicon field-effect transistors (FETs) has been the main drive for achieving higher device density while improving the transistor performance in complementary metalÀoxideÀ semiconductor (CMOS) circuits. One of the principle benefits of the conventional scaling trend, namely, reducing the power consumption per computation, has diminished in recent years. In particular, power management is increasingly becoming a major challenge because of the inability to further decrease the operating voltage without compromising the performance of silicon FETs. Incorporation of alternative channel materials with superior carrier transport properties, as presently conceived, is a favorable strategy for the semiconductor industry to complement or replace silicon FETs. Among the promising candidates, carbon nanotubes (CNTs) are predicted to offer the most energy-efficient solution for computation compared with other channel materials, 1 owing to their unique properties such as ultrathin body and ballistic carrier transport in the channel. ABSTRACT So far, realization of reproducible n-type carbon nanotube (CNT) transistors suitable for integrated digital applications has been a difficult task. In this work, hundreds of n-type CNT transistors from three different low work function metals ; erbium, lanthanum, and yttrium ; are studied and benchmarked against p-type devices with palladium contacts. The crucial role of metal type and deposition conditions is elucidated with respect to overall yield and performance of the n-type devices. It is found that high oxidation rates and sensitivity to deposition conditions are the major causes for the lower yield and large variation in performance of n-type CNT devices with low work function metal contacts. Considerable improvement in device yield is attained using erbium contacts evaporated at high deposition rates. Furthermore, the air-stability of our n-type transistors is studied in light of the extreme sensitivity of these metals to oxidation