11 research outputs found
Designing spin-1 lattice models using polar molecules
We describe how to design a large class of always on spin-1 interactions
between polar molecules trapped in an optical lattice. The spin degrees of
freedom correspond to the hyperfine levels of a ro-vibrational ground state
molecule. Interactions are induced using a microwave field to mix ground states
in one hyperfine manifold with the spin entangled dipole-dipole coupled excited
states. Using multiple fields anistropic models in one, two, or three
dimensions, can be built with tunable spatial range. An illustrative example in
one dimension is the generalized Haldane model, which at a specific parameter
has a gapped valence bond solid ground state. The interaction strengths are
large compared to decoherence rates and should allow for probing the rich phase
structure of strongly correlated systems, including dimerized and gapped
phases.Comment: 24 pages, 5 figure
Enhancement of the electric dipole moment of the electron in BaF molecule
We report results of ab initio calculation of the spin-rotational Hamiltonian
parameters including P- and P,T-odd terms for the BaF molecule. The ground
state wave function of BaF molecule is found with the help of the Relativistic
Effective Core Potential method followed by the restoration of molecular
four-component spinors in the core region of barium in the framework of a
non-variational procedure. Core polarization effects are included with the help
of the atomic Many Body Perturbation Theory for Barium atom. For the hyperfine
constants the accuracy of this method is about 5-10%.Comment: 8 pages, REVTEX, report at II International Symposium on Symmetries
in Subatomic Physics, Seattle 199
Two-step method for precise calculation of core properties in molecules
Precise calculations of core properties in heavy-atom systems which are
described by the operators heavily concentrated in atomic cores, like to
hyperfine structure and P,T-parity nonconservation effects, usually require
accounting for relativistic effects. Unfortunately, completely relativistic
treatment of molecules containing heavy elements is very consuming already at
the stages of calculation and transformation of two-electron integrals with a
basis set of four-component spinors.
In turn, the relativistic effective core potential (RECP) calculations of
valence (spectroscopic, chemical etc.) properties of molecules are very popular
because the RECP method allows one to treat quite satisfactory the correlation
and relativistic effects for the valence electrons of a molecule and to reduce
significantly the computational efforts. The valence molecular spinors are
usually smoothed in atomic cores and, as a result, direct calculation of
electronic densities near heavy nuclei is impossible.
In the paper, the methods of nonvariational and variational one-center
restoration of correct shapes of four-component spinors in atomic cores after a
two-component RECP calculation of a molecule are discussed. Their efficiency is
illustrated in correlation calculations of hyperfine structure and parity
nonconservation effects in heavy-atom molecules YbF, BaF, TlF, and PbO.Comment: 20 pages, 3 tables, lecture on the Fock school-conference
(Novgorod-the-Great, Russia, April 2004
Sicherheit bei Halbleiterfertigungsgeräten
Sicherheit ist ein heute recht oft verwendetes Schlagwort. Häufig versteht man darunter, je nach Standpunkt, etwas ganz anderes. Bei Halbleiterfertigungsgeräten kann man "Sicherheit" im Zusammenhang mit vier verschiedenen Aspekten gebrauchen: - Halbleiterfertigungsgeräte sollen sicher für das Bedienpersonal sein, dieses also nicht gefährden, z.B. durch Strahlung, toxische Gase oder hohe Spannungen. - Halbleiterfertigungsgeräte sollen sicher für die Umwelt sein, d.h. beispielsweise keine toxischen Gase und Chemikalien freisetzen. - Halbleiterfertigungsgeräte sollen sicher hinsichtlich des Prozeßergebnisses sein, d.h. die gewünschte Schichtdicke, Linienbreite oder Dotierungskonzentration soll reproduzierbar und homogen über die Scheibe ohne Nachregelung am Ende des Prozeßschrittes vorliegen. - Schließlich sollen Halbleiterfertigungsgeräte auch betriebssicher sein, d.h. eine möglichst hohe up-time besitzen, da die besten Prozeßergebnisse nichts nützen, wenn man nicht wirtschaftlich fertig en kann. (-z-