Integrating 'atomistic', intrinsic parameter fluctuations into compact model circuit analysis

MOSFET parameter fluctuations, resulting from the 'atomistic' granular nature of matter, are predicted to be a critical roadblock to the scaling of devices in future electronic systems. A methodology is presented which allows compact model based circuit analysis tools to exploit the results of 'atomistic' device simulation, allowing investigation of the effects of such fluctuations on circuits and systems. The methodology is applied to a CMOS inverter, ring oscillator, and analogue NMOS current mirror as simple initial examples of its efficacy

Marginal distributions in (2N)(\bf 2N)-dimensional phase space and the quantum (N+1)(\bf N+1) marginal theorem

We study the problem of constructing a probability density in 2N-dimensional phase space which reproduces a given collection of $n$ joint probability distributions as marginals. Only distributions authorized by quantum mechanics, i.e. depending on a (complete) commuting set of $N$ variables, are considered. A diagrammatic or graph theoretic formulation of the problem is developed. We then exactly determine the set of ``admissible'' data, i.e. those types of data for which the problem always admits solutions. This is done in the case where the joint distributions originate from quantum mechanics as well as in the case where this constraint is not imposed. In particular, it is shown that a necessary (but not sufficient) condition for the existence of solutions is $n\leq N+1$. When the data are admissible and the quantum constraint is not imposed, the general solution for the phase space density is determined explicitly. For admissible data of a quantum origin, the general solution is given in certain (but not all) cases. In the remaining cases, only a subset of solutions is obtained.Comment: 29 pages (Work supported by the Indo-French Centre for the Promotion of Advanced Research, Project Nb 1501-02). v2 to add a report-n

Grid infrastructures for the electronics domain: requirements and early prototypes from an EPSRC pilot project

The fundamental challenges facing future electronics design is to address the decreasing – atomistic - scale of transistor devices and to understand and predict the impact and statistical variability these have on design of circuits and systems. The EPSRC pilot project “Meeting the Design Challenges of nanoCMOS Electronics” (nanoCMOS) which began in October 2006 has been funded to explore this space. This paper outlines the key requirements that need to be addressed for Grid technology to support the various research strands in this domain, and shows early prototypes demonstrating how these requirements are being addressed

Disordered Chern insulator with a two step Floquet drive

We explore the physics of a Chern insulator subjected to a two step Floquet drive. We analytically obtain the phase diagram and show that the system can exhibit different topological phases characterized by presence and chirality of edge-modes in the two bulk gaps of the Floquet quasienergy spectrum, around $0$ and $\pi$. We find that the phase of the system depends on the mean but not on the amplitude of the drive. The bulk topological invariants characterizing the phases can be extracted by mapping the unitary evolution within a time period to an energetically trivial but topologically non-trivial time evolution. An extensive numerical study of the bulk topological invariants in the presence of quenched disorder reveals new transitions induced by strong disorder (i) from the different topological to trivial insulator phases and (ii) from a trivial to a topological Anderson insulator phase at intermediate disorder strengths. Careful analysis of level statistics of the quasienergy spectrum indicates a `levitation-annihilation' mechanism near these transitions.Comment: 15 pages, 10 figures, version published in Phys. Rev.

Integrated atomistic process and device simulation of decananometre MOSFETs

In this paper we present a methodology for the integrated atomistic process and device simulation of decananometre MOSFETs. The atomistic process simulations were carried out using the kinetic Monte Carlo process simulator DADOS, which is now integrated into the Synopsys 3D process and device simulation suite Taurus. The device simulations were performed using the Glasgow 3D statistical atomistic simulator, which incorporates density gradient quantum corrections. The overall methodology is illustrated in the atomistic process and device simulation of a well behaved 35 nm physical gate length MOSFET reported by Toshiba

Helium nuclei around the neutron drip line

Neutron rich He nuclei have been investigated using relativistic mean field approach in co-ordinate space. Elastic partial scattering cross sections for proton scattering in inverse kinematics have been calculated using the theoretically obtained density for $^{6,8}$He and compared with experiment. The energies of the low-lying resonance states in the neutron unstable nuclei $^{5,7}$He have also been calculated and compared with experimental observations.Comment: To appear in Physical Review

Towards a grid-enabled simulation framework for nano-CMOS electronics

The electronics design industry is facing major challenges as transistors continue to decrease in size. The next generation of devices will be so small that the position of individual atoms will affect their behaviour. This will cause the transistors on a chip to have highly variable characteristics, which in turn will impact circuit and system design tools. The EPSRC project "Meeting the Design Challenges of Nano-CMOS Electronics" (Nana-CMOS) has been funded to explore this area. In this paper, we describe the distributed data-management and computing framework under development within Nano-CMOS. A key aspect of this framework is the need for robust and reliable security mechanisms that support distributed electronics design groups who wish to collaborate by sharing designs, simulations, workflows, datasets and computation resources. This paper presents the system design, and an early prototype of the project which has been useful in helping us to understand the benefits of such a grid infrastructure. In particular, we also present two typical use cases: user authentication, and execution of large-scale device simulations

Competition, quality and contract compliance: evidence from compulsory competitive tendering in local government in Great Britain, 1987-2000

The introduction of competition has frequently been found to cause costs to fall. There has, however, been a question as to whether this was partly achieved at the cost of quality. Auction theory predicts prices would fall more the greater the competition to provide the service. There has been some debate about whether the smaller budgets would make contract compliance more difficult. Evidence is found in support of this hypothesis. We also find some evidence that the better recorded performance of the in-house direct service organisations (DSOs) during this period was due to the information advantage they had from being incumbents