Control of the responsivity and the detectivity of superconductive edge-transition YBa2Cu3O7-x bolometers through substrate properties

Cataloged from PDF version of article.The detectivity D* limits of YBa2Cu3O7-x bolometer on 0.05-cm-thick crystalline substrates are investigated, and a method to increase D* to greater than 10(9) (cm Hz(1/2))/W at a 20-mu m wavelength is proposed. Because the response increases proportionally with the bias current I-b, whereas the noise near T-c (the transition or critical temperature) of our MgO and SrTiO3 substrate samples does not, an increase in D* of these samples is obtained by an increase in I-b. Another limiting factor is the de thermal conductance G(0) of the device, which, although controlled by the substrate-holder thermal boundary resistance for our samples, can be changed by means of thinning the substrate to increase D*. The optimal amount of thinning depends on the substrate's thermal parameters and the radiation modulation frequency. D* in our samples is also found to follow the spectral-radiation absorption of the substrate material. (C) 1999 Optical Society of America

Photoinduced absorption from localized intra-gap states

A model is developed for photoinduced absorption from localized states observed in femtosecond pump-probe experiments in high-Tc superconductors and other materials. The dynamics of localized carriers are described in terms of phenomenological approach similar to that originaly proposed by Rothwarf and Taylor. Expanding the relaxation rate in powers of the order parameter we have shown that density of localized carriers is sensitive to Tc. From the analysis of the experimental data on YBa2Cu3O(7-x) and K0.3MoO3 we conclude that significant intra-gap density of localized states exists in these materials. Temperature dependence of the density of photoexcited localized carriers in underdoped YBa2Cu3O(7-x) and in K0.3MoO3 is consistent with the observation of the pseudogap above Tc.Comment: 4 pages, 2 figures, acepted for publication in Physica C, invited poster presented at M2S, Feb. 20 - 25, 2000, Houston, US

Relaxation Dynamics of Photoinduced Changes in the Superfluid Weight of High-Tc Superconductors

In the transient state of d-wave superconductors, we investigate the temporal variation of photoinduced changes in the superfluid weight. We derive the formula that relates the nonlinear response function to the nonequilibrium distribution function. The latter qunatity is obtained by solving the kinetic equation with the electron-electron and the electron-phonon interaction included. By numerical calculations, a nonexponential decay is found at low temperatures in contrast to the usual exponential decay at high temperatures. The nonexponential decay originates from the nonmonotonous temporal variation of the nonequilibrium distribution function at low energies. The main physical process that causes this behavior is not the recombination of quasiparticles as previous phenomenological studies suggested, but the absorption of phonons.Comment: 18 pages, 12 figures; to be published in J. Phys. Soc. Jpn. Vol. 80, No.

Non-equilibrium Superconductivity and Quasiparticle Dynamics studied by Photo Induced Activation of Mm-Wave Absorption (PIAMA)

We present a study of non-equilibrium superconductivity in DyBa2Cu3O7-d using photo induced activation of mm-wave absorption (PIAMA). We monitor the time evolution of the thin film transmissivity at 5 cm-1 subject to pulsed infrared radiation. In addition to a positive bolometric signal we observe a second, faster, decay with a sign opposite to the bolometric signal for T>40 K. We attribute this to the unusual properties of quasi-particles residing near the nodes of an unconventional superconductor, resulting in a strong enhancement of the recombination time.Comment: 4 pages, REVTeX, Submitted to Phys. Rev. Letter

Calculation of magnetic anisotropy energy in SmCo5

SmCo5 is an important hard magnetic material, due to its large magnetic anisotropy energy (MAE). We have studied the magnetic properties of SmCo5 using density functional theory (DFT) calculations where the Sm f-bands, which are difficult to include in DFT calculations, have been treated within the LDA+U formalism. The large MAE comes mostly from the Sm f-shell anisotropy, stemming from an interplay between the crystal field and the spin-orbit coupling. We found that both are of similar strengths, unlike some other Sm compounds, leading to a partial quenching of the orbital moment (f-states cannot be described as either pure lattice harmonics or pure complex harmonics), an optimal situation for enhanced MAE. A smaller portion of the MAE can be associated with the Co-d band anisotropy, related to the peak in the density of states at the Fermi energy. Our result for the MAE of SmCo5, 21.6 meV/f.u., agrees reasonably with the experimental value of 13-16 meV/f.u., and the calculated magnetic moment (including the orbital component) of 9.4 mu_B agrees with the experimental value of 8.9 mu_B.Comment: Submitted to Phys. Rev.

A superconducting-nanowire 3-terminal electronic device

In existing superconducting electronic systems, Josephson junctions play a central role in processing and transmitting small-amplitude electrical signals. However, Josephson-junction-based devices have a number of limitations including: (1) sensitivity to magnetic fields, (2) limited gain, (3) inability to drive large impedances, and (4) difficulty in controlling the junction critical current (which depends sensitively on sub-Angstrom-scale thickness variation of the tunneling barrier). Here we present a nanowire-based superconducting electronic device, which we call the nanocryotron (nTron), that does not rely on Josephson junctions and can be patterned from a single thin film of superconducting material with conventional electron-beam lithography. The nTron is a 3-terminal, T-shaped planar device with a gain of ~20 that is capable of driving impedances of more than 100 k{\Omega}, and operates in typical ambient magnetic fields at temperatures of 4.2K. The device uses a localized, Joule-heated hotspot formed in the gate to modulate current flow in a perpendicular superconducting channel. We have characterized the nTron, matched it to a theoretical framework, and applied it both as a digital logic element in a half-adder circuit, and as a digital amplifier for superconducting nanowire single-photon detectors pulses. The nTron has immediate applications in classical and quantum communications, photon sensing and astronomy, and its performance characteristics make it compatible with existing superconducting technologies. Furthermore, because the hotspot effect occurs in all known superconductors, we expect the design to be extensible to other materials, providing a path to digital logic, switching, and amplification in high-temperature superconductors

Role of deep levels and interface states in the capacitance characteristics of all‐sputtered CuInSe2/CdS solar cell heterojunctions

All‐sputtered CuInSe2/CdS solar cellheterojunctions have been analyzed by means of capacitance‐frequency (C‐F) and capacitance‐bias voltage (C‐V) measurements. Depending on the CuInSe2 layer composition, two kinds of heterojunctions were analyzed: type 1 heterojunctions (based on stoichiometric or slightly In‐rich CuInSe2 layers) and type 2 heterojunctions (based on Cu‐rich CuInSe2 layers). In type 1 heterojunctions, a 80‐meV donor level has been found. Densities of interface states in the range 101 0–101 1 cm2 eV− 1 (type 1) and in the range 101 2–101 3 cm− 2 eV− 1 (type 2) have been deduced. On the other hand, doping concentrations of 1.6×101 6 cm− 3 for stoichiometric CuInSe2 (type 1 heterojunction) and 8×101 7 cm− 3 for the CdS (type 2 heterojunction) have been deduced from C‐Vmeasurements

Measurement of the electron–hole pair creation energy in Al0.52In0.48P using X-ray radiation

The average energy consumed in the generation of an electron–hole pair (ε AlInP ) in Al 0.52 In 0.48 P was experimentally measured across the temperature range −20 °C to 100 ∘ C, using a custom AlInP X-ray-photodiode, an 55 Fe radioisotope X-ray source, and custom low-noise charge-sensitive preamplifier electronics. ε AlInP was found to linearly decrease with increasing temperature according to the equation ε AlInP = (-0.0033 eV/K ± 0.0003 eV/K)T + (6.31 eV ± 0.10 eV). At room temperature (20 °C), ε AlInP = 5.34 eV ± 0.07 eV

Vortex avalanches and magnetic flux fragmentation in superconductors

We report results of numerical simulations of non isothermal dendritic flux penetration in type-II superconductors. We propose a generic mechanism of dynamic branching of a propagating hotspot of a flux flow/normal state triggered by a local heat pulse. The branching occurs when the flux hotspot reflects from inhomogeneities or the boundary on which magnetization currents either vanish, or change direction. Then the hotspot undergoes a cascade of successive splittings, giving rise to a dissipative dendritic-type flux structure. This dynamic state eventually cools down, turning into a frozen multi-filamentary pattern of magnetization currents.Comment: 4 pages, 4 figures, accepted to Phys. Rev. Let