Magneto-electrical subbands of freely suspended quantum point contacts

We present a versatile design of freely suspended quantum point contacts with particular large one-dimensional subband quantization energies of up to 10meV. The nanoscale bridges embedding a two-dimensional electron system are fabricated from AlGaAs/GaAs heterostructures by electron-beam lithography and etching techniques. Narrow constrictions define quantum point contacts that are capacitively controlled via local in-plane side gates. Employing transport spectroscopy, we investigate the transition from electrostatic subbands to Landau-quantization in a perpendicular magnetic field. The large subband quantization energies allow us to utilize a wide magnetic field range and thereby observe a large exchange splitted spin-gap of the two lowest Landau-levels

Nematic state of the FeSe superconductor

We study the crystal structure of the tetragonal iron selenide FeSe and its nematic phase transition to the low-temperature orthorhombic structure using synchrotron x-ray and neutron scattering analyzed in both real space and reciprocal space. We show that in the local structure the orthorhombic distortion associated with the electronically driven nematic order is more pronounced at short length scales. It also survives to temperatures above 90 K, where reciprocal-space analysis suggests tetragonal symmetry. Additionally, the real-space pair distribution function analysis of the synchrotron x-ray diffraction data reveals a tiny broadening of the peaks corresponding to the nearest Fe-Fe, nearest Fe-Se, and next-nearest Fe-Se bond distances as well as the tetrahedral torsion angles at a short length scale of 20 Å. This broadening appears below 20 K and is attributed to a pseudogap. However, we did not observe any further reduction in local symmetry below orthorhombic down to 3 K. Our results suggest that the superconducting gap anisotropy in FeSe is not associated with any symmetry-lowering short-range structural correlations

Dynamic photoconductive gain effect in shallow-etched AlGaAs/GaAs quantum wires

We report on a dynamic photoconductive gain effect in quantum wires which are lithographically fabricated in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires as maxima in the photoresponse across the quantum wires. We interpret the results by optically induced holes in the valence band of the quantum well which shift the chemical potential of the quantum wire. The non-linear current-voltage characteristics of the quantum wires also allow detecting the photoresponse effect of excess charge carriers in the conduction band of the quantum well. The dynamics of the photoconductive gain are limited by the recombination time of both electrons and holes

The phase plane of moving discrete breathers

We study anharmonic localization in a periodic five atom chain with quadratic-quartic spring potential. We use discrete symmetries to eliminate the degeneracies of the harmonic chain and easily find periodic orbits. We apply linear stability analysis to measure the frequency of phonon-like disturbances in the presence of breathers and to analyze the instabilities of breathers. We visualize the phase plane of breather motion directly and develop a technique for exciting pinned and moving breathers. We observe long-lived breathers that move chaotically and a global transition to chaos that prevents forming moving breathers at high energies.Comment: 8 pages text, 4 figures, submitted to Physical Review Letters. See http://www.msc.cornell.edu/~houle/localization

Laterally defined freely suspended quantum dots in GaAs/AlGaAs heterostructures

Free standing beams containing a two-dimensional electron system are shaped from a GaAs/AlGaAs heterostructure. Quantum point contacts and (double) quantum dots are laterally defined using metal top gates. We investigate the electronic properties of these nanostructures by transport spectroscopy. Tunable localized electron states in freely suspended nanostructures are a promising tool to investigate the electron-phonon-interaction

Energy scales in 4f1 delafossite magnets: crystal-field splittings larger than the strength of spin-orbit coupling in KCeO2

Ytterbium-based delafossites with effective S=1/2 moments are investigated intensively as candidates for quantum spin-liquid ground states. While the synthesis of related cerium compounds has also been reported,many important details concerning their crystal, electronic, and magnetic structures are unclear. Here we analyze the S=1/2 system KCeO2, combining complementary theoretical methods. The lattice geometry was optimized and the band structure investigated using density functional theory extended to the level of a GGA+U calculation in order to reproduce the correct insulating behavior. The Ce 4f1 states were then analyzed in more detail with the help of ab initio wave-function-based computations. Unusually large effective crystal-field splittings of up to 320 meV are predicted, which puts KCeO2 in the strong field coupling regime. Our results reveal a subtle interplay between ligand-cage electrostatics and the trigonal field generated by the extended crystalline surroundings, relevant in the context of recent studies on tuning the nature of the ground-state wave function in 4f triangular-lattice and pyrochlore compounds. It also makes KCeO2 an interesting model system in relation to the effect of large crystal-field splittings on the anisotropy of intersite exchange in spin-orbit coupled quantum magnets.Comment: 6 pages, 2 figures, and 3 table

Optically induced transport properties of freely suspended semiconductor submicron channels

We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas (2DEG). The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of photogating and a photodoping effect. The hereby enhanced electronic conductance exhibits a time constant in the range of one to ten milliseconds

The electron-hole liquid in a polar semiconductor: Cubic SiC

The binding energy EB = (17 +/- 3) meV and density n = (9.2 +/- 1.7) x 1018 cm-3 of the EHL in cubic SiC are determined from excitation-dependent spectra. Comparing these values with ground state properties calculated with and without electron-phonon-interaction using newly determined valence band parameters evidence for the importance of e.p.i. in SiC is found.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/23743/1/0000715.pd

Fractional Generalization of Gradient Systems

We consider a fractional generalization of gradient systems. We use differential forms and exterior derivatives of fractional orders. Examples of fractional gradient systems are considered. We describe the stationary states of these systems.Comment: 11 pages, LaTe