Signals for Neutralino Box Effects at LEP2

We have computed the contribution to the observables of the final two fermion channel at LEP2, at the limiting energy $\sqrt{q^2}=200 GeV$, coming from boxes with two neutralinos of purely gaugino type, of mass $M=100 GeV$. We find a potentially visible effect only for the muon channel, in the cross section and, to a lesser extent, in the forward-backward asymmetry. Analogous effects coming from the chargino box are also briefly discussed.Comment: 10 pages and 2 figures. e-mail: [email protected]

Designing III-V Multijunction Solar Cells on Silicon

Single junction Si solar cells dominate photovoltaics but are close to their efficiency limits. This paper presents ideal limiting efficiencies for tandem and triple junction multijunction solar cells subject only to the constraint of the Si bandgap and therefore recommending optimum cell structures departing from the single junction ideal. The use of III-V materials is considered, using a novel growth method capable of yielding low defect density III-V layers on Si. In order to evaluate the real potential of these proposed multijunction designs, a quantitative model is presented, the strength of which is the joint modelling of external quantum efficiency and current-voltage characteristics using the same parameters. The method yields a single parameter fit in terms of the Shockley-Read-Hall lifetime. This model is validated by fitting experimental data of external quantum efficiency, dark current, and conversion efficiency of world record tandem and triple junction cells under terrestrial solar spectra without concentration. We apply this quantitative model to the design of tandem and triple junction solar cells, yielding cell designs capable of reaching efficiencies without concentration of 32% for the best tandem cell and 36% for the best triple junction cell. This demonstrates that efficiencies within a few percent of world records are realistically achievable without the use of concentrating optics, with growth methods being developed for multijunction cells combining III-V and Si materials.Comment: Preprint of the paper submitted to the journal Progress in Photovoltaics, selected by the Executive Committee of the 28th EU PVSEC 2013 for submission to Progress in Photovoltaics. 10 pages, 7 figure

Spin dynamics of hole doped Y2BaNiO5

Starting from a multiband Hamiltonian containing the relevant Ni and O orbitals, we derive an effective Hamiltonian $H_{eff}$ for the low energy physics of doped Y$_{2}$BaNiO$_{5}.$ For hole doping, $H_{eff}$ describes O fermions interacting with S=1 Ni spins in a chain, and cannot be further reduced to a simple one-band model. Using numerical techniques, we obtain a dynamical spin structure factor with weight inside the Haldane gap. The nature of these low-energy excitations is identified and the emerging physical picture is consistent with most of the experimental information in Y% $_{2-x}$Ca$_{x}$BaNiO$_{5}$Comment: 4 pages, 2 figure

The roughness of stylolites: Implications of 3D high resolution topography measurements

Stylolites are natural pressure-dissolution surfaces in sedimentary rocks. We present 3D high resolution measurements at laboratory scales of their complex roughness. The topography is shown to be described by a self-affine scaling invariance. At large scales, the Hurst exponent is $\zeta_1 \approx 0.5$ and very different from that at small scales where $\zeta_2 \approx 1.2$. A cross-over length scale at around \L_c =1~mm is well characterized. Measurements are consistent with a Langevin equation that describes the growth of a stylolitic interface as a competition between stabilizing long range elastic interactions at large scales or local surface tension effects at small scales and a destabilizing quenched material disorder.Comment: 4 pages, 4 figure

Electron transport through antidot superlattices in Si/SiGeSi/SiGe heterostructures: new magnetoresistance resonances in lattices with large diameter antidots

In the present work we have investigated the transport properties in a number of Si/SiGe samples with square antidot lattices of different periods. In samples with lattice periods equal to 700 nm and 850 nm we have observed the conventional low-field commensurability magnetoresistance peaks consistent with the previous observations in GaAs/AlGaAs and Si/SiGe samples with antidot lattices. In samples with a 600 nm lattice period a new series of well-developed magnetoresistance oscillations has been found beyond the last commensurability peak which are supposed to originate from periodic skipping orbits encircling an antidot with a particular number of bounds.Comment: To appear in EuroPhys. Let