Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC

This letter reports on the negative charge trapping in Al2O3 thin films grown by atomic layer deposition onto oxidized silicon carbide (4H-SiC). The films exhibited a permittivity of 8.4, a breakdown field of 9.2 MV/cm and small hysteresis under moderate bias cycles. However, severe electron trapping inside the Al2O3 film (1 × 1012 cm−2) occurs upon high positive bias stress (>10V). Capacitance-voltage measurements at different temperatures and stress conditions have been used to determine an activation energy of 0.1eV. The results provide indications on the possible nature of the trapping defects and, hence, on the strategies to improve this technology for 4H-SiC devices

Recent Advances in Seeded and Seed-Layer-Free Atomic Layer Deposition of High-K Dielectrics on Graphene for Electronics

Graphene (Gr) with its distinctive features is the most studied two-dimensional (2D) material for the new generation of high frequency and optoelectronic devices. In this context, the Atomic Layer Deposition (ALD) of ultra-thin high-k insulators on Gr is essential for the implementation of many electronic devices. However, the lack of out-of-plane bonds in the sp2 lattice of Gr typically hinders the direct ALD growth on its surface. To date, several pre-functionalization and/or seed-layer deposition processes have been explored, to promote the ALD nucleation on Gr. The main challenge of these approaches is achieving ultra-thin insulators with nearly ideal dielectric properties (permittivity, breakdown field), while preserving the structural and electronic properties of Gr. This paper will review recent developments of ALD of high k-dielectrics, in particular Al2O3, on Gr with "in-situ" seed-layer approaches. Furthermore, recent reports on seed-layer-free ALD onto epitaxial Gr on SiC and onto Gr grown by chemical vapor deposition (CVD) on metals will be presented, discussing the role played by Gr interaction with the underlying substrates

CaCu3Ti4O12 single crystals: insights on growth and nanoscopic investigation

The combination of scanning impedance microscopy and conductive atomic force microscopy was applied to single crystals of the perovskite-type oxide CaCu3Ti4O12 (CCTO) in order to provide a local dielectric characterization on ingot sections. Both techniques clearly showed dielectric heterogeneities due to the presence of inclusions within crystals grown in different laboratories. Despite macroscopic characterizations, such as Laue diffraction, gave no indications for the presence of inclusions within the crystals, the discovery of dielectric heterogeneities prompted a careful structural analysis, which revealed the presence of crystalline CaTiO3 (CTO) precipitates. Thus, the scanning probe investigation provided the evidence for the electrical homogeneity within the CCTO crystal and the presence of internal barriers due to the CCTO/CTO interfaces

Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition

In this article, electron trapping in aluminum oxide (Al2O3) thin films grown by plasma enhanced atomic layer deposition on AlGaN/GaN heterostructures has been studied and a correlation with the presence of oxygen defects in the film has been provided. Capacitance–voltage measurements revealed the occurrence of a negative charge trapping effect upon bias stress, able to fill an amount of charge traps in the bulk Al2O3 in the order of 5 × 1012 cm−2. A structural analysis based on electron energy-loss spectroscopy demonstrated the presence of low-coordinated Al cations in the Al2O3 film, which is an indication of oxygen vacancies, and can explain the electrical behavior of the film. These charge trapping effects were used for achieving thermally stable (up to 100 °C) enhancement mode operation in AlGaN/GaN transistors, by controlling the two-dimensional electron gas depletion

Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC

This work reports a nanoscale electro-structural characterisation of Ti/Al ohmic contacts formed on p-type Al-implanted silicon carbide (4H-SiC). The morphological and the electrical properties of the Al-implanted layer, annealed at 1700°C with or without a protective capping layer, and of the ohmic contacts were studied using atomic force microscopy [AFM], transmission line model measurements and local current measurements performed with conductive AFM

Scanning Probe Microscopy on heterogeneous CaCu3Ti4O12 thin films

The conductive atomic force microscopy provided a local characterization of the dielectric heterogeneities in CaCu3Ti4O12 (CCTO) thin films deposited by MOCVD on IrO2 bottom electrode. In particular, both techniques have been employed to clarify the role of the inter- and sub-granular features in terms of conductive and insulating regions. The microstructure and the dielectric properties of CCTO thin films have been studied and the evidence of internal barriers in CCTO thin films has been provided. The role of internal barriers and the possible explanation for the extrinsic origin of the giant dielectric response in CCTO has been evaluated

Clinical features and outcomes of elderly hospitalised patients with chronic obstructive pulmonary disease, heart failure or both

Background and objective: Chronic obstructive pulmonary disease (COPD) and heart failure (HF) mutually increase the risk of being present in the same patient, especially if older. Whether or not this coexistence may be associated with a worse prognosis is debated. Therefore, employing data derived from the REPOSI register, we evaluated the clinical features and outcomes in a population of elderly patients admitted to internal medicine wards and having COPD, HF or COPD + HF. Methods: We measured socio-demographic and anthropometric characteristics, severity and prevalence of comorbidities, clinical and laboratory features during hospitalization, mood disorders, functional independence, drug prescriptions and discharge destination. The primary study outcome was the risk of death. Results: We considered 2,343 elderly hospitalized patients (median age 81 years), of whom 1,154 (49%) had COPD, 813 (35%) HF, and 376 (16%) COPD + HF. Patients with COPD + HF had different characteristics than those with COPD or HF, such as a higher prevalence of previous hospitalizations, comorbidities (especially chronic kidney disease), higher respiratory rate at admission and number of prescribed drugs. Patients with COPD + HF (hazard ratio HR 1.74, 95% confidence intervals CI 1.16-2.61) and patients with dementia (HR 1.75, 95% CI 1.06-2.90) had a higher risk of death at one year. The Kaplan-Meier curves showed a higher mortality risk in the group of patients with COPD + HF for all causes (p = 0.010), respiratory causes (p = 0.006), cardiovascular causes (p = 0.046) and respiratory plus cardiovascular causes (p = 0.009). Conclusion: In this real-life cohort of hospitalized elderly patients, the coexistence of COPD and HF significantly worsened prognosis at one year. This finding may help to better define the care needs of this population