Formation of SiC by radiative association

Rate coefficients for radiative association of silicon and carbon atoms to form silicon carbide molecule (SiC) are estimated. The radiative association of Si(3P) and C(3P) atoms mainly occurs through the C3 Pi state followed by radiative decay to the X3 Pi state. For the temperature range of 300-14 000 K, the rate coefficients slowly increase with temperature and they can be expressed by K(T) = 2.038 x 10-17(T/300)-0.01263 exp(-136.73/T) cm3 s-1.Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES

Balanced-Scorecard-unterstützte Führungs- und Anreizsysteme

Rate coefficients for the radiative association of titanium and oxygen atoms to form the titanium monoxide (TiO) molecule are estimated. The radiative association of Ti(F-3) and O(P-3) atoms is dominated by an approach along the C-3 Delta potential energy curve, accompanied by spontaneous emission into the X-3 Delta ground state of TiO. For temperatures ranging from 300-14 000 K, the total rate coefficients are found to vary from 4.76 x 10(-17) to 9.96 x 10(-17) cm(3) s(-1), respectively.Coordenacao de Aperfeicoamento de Pessoal de Nivel Superior (CAPES)Coordenacao de Aperfeicoamento de Pessoal de Nivel Superior (CAPES