Excited states of neutral donor bound excitons in GaN

We investigate the excited states of a neutral donor bound exciton (D0X) in bulk GaN by means of high-resolution, polychromatic photoluminescence excitation (PLE) spectroscopy. The optically most prominent donor in our sample is silicon accompanied by only a minor contribution of oxygen—the key for an unambiguous assignment of excited states. Consequently, we can observe a multitude of Si0X-related excitation channels with linewidths down to 200 μeV. Two groups of excitation channels are identified, belonging either to rotational-vibrational or electronic excited states of the hole in the Si0X complex. Such identification is achieved by modeling the excited states based on the equations of motion for a Kratzer potential, taking into account the particularly large anisotropy of effective hole masses in GaN. Furthermore, several ground- and excited states of the exciton-polaritons and the dominant bound exciton are observed in the photoluminescence (PL) and PLE spectra, facilitating an estimate of the associated complex binding energies. Our data clearly show that great care must be taken if only PL spectra of D0X centers in GaN are analyzed. Every PL feature we observe at higher emission energies with regard to the Si0X ground state corresponds to an excited state. Hence, any unambiguous peak identification renders PLE spectra highly valuable, as important spectral features are obscured in common PL spectra. Here, GaN represents a particular case among the wide-bandgap, wurtzite semiconductors, as comparably low localization energies for common D0X centers are usually paired with large emission linewidths and the prominent optical signature of exciton-polaritons, making the sole analysis of PL spectra a challenging task.EC/H2020/749565/EU/Heat Transport and its Effects on the Performance of Nanostructured, Photonic Materials/PhotoHeatEffectDFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelement

From Strong to Weak Coupling Regime in a Single GaN Microwire up to Room Temperature

Large bandgap semiconductor microwires constitute a very advantageous alternative to planar microcavities in the context of room temperature strong coupling regime between exciton and light. In this work we demonstrate that in a GaN microwire, the strong coupling regime is achieved up to room temperature with a large Rabi splitting of 125 meV never achieved before in a Nitride-based photonic nanostructure. The demonstration relies on a method which doesn't require any knowledge \'a priori on the photonic eigenmodes energy in the microwire, i.e. the details of the microwire cross-section shape. Moreover, using a heavily doped segment within the same microwire, we confirm experimentally that free excitons provide the oscillator strength for this strong coupling regime. The measured Rabi splitting to linewidth ratio of 15 matches state of the art planar Nitride-based microcavities, in spite of a much simpler design and a less demanding fabrication process. These results show that GaN microwires constitute a simpler and promising system to achieve electrically pumped lasing in the strong coupling regime.Comment: 14 pages, 4 figure

Spontaneous Polarisation Build up in a Room Temperature Polariton Laser

We observe the build up of strong (~50%) spontaneous vector polarisation in emission from a GaN-based polariton laser excited by short optical pulses at room temperature. The Stokes vector of emitted light changes its orientation randomly from one excitation pulse to another, so that the time-integrated polarisation remains zero. This behaviour is completely different to any previous laser. We interpret this observation in terms of the spontaneous symmetry breaking in a Bose-Einstein condensate of exciton-polaritons

Uncoupled excitons in semiconductor microcavities detected in resonant Raman scattering

We present an outgoing resonant Raman-scattering study of a GaAs/AlGaAs based microcavity embedded in a p-i-n junction. The p-i-n junction allows the vertical electric field to be varied, permitting control of exciton-photon detuning and quenching of photoluminescence which otherwise obscures the inelastic light scattering signals. Peaks corresponding to the upper and lower polariton branches are observed in the resonant Raman cross sections, along with a third peak at the energy of uncoupled excitons. This third peak, attributed to disorder activated Raman scattering, provides clear evidence for the existence of uncoupled exciton reservoir states in microcavities in the strong-coupling regime

One dimensional exciton luminescence induced by extended defects in nonpolar (Al,Ga)N/GaN quantum wells

In this study, we present the optical properties of nonpolar GaN/(Al,Ga)N single quantum wells (QWs) grown on either a- or m-plane GaN templates for Al contents set below 15%. In order to reduce the density of extended defects, the templates have been processed using the epitaxial lateral overgrowth technique. As expected for polarization-free heterostructures, the larger the QW width for a given Al content, the narrower the QW emission line. In structures with an Al content set to 5 or 10%, we also observe emission from excitons bound to the intersection of I1-type basal plane stacking faults (BSFs) with the QW. Similarly to what is seen in bulk material, the temperature dependence of BSF-bound QW exciton luminescence reveals intra-BSF localization. A qualitative model evidences the large spatial extension of the wavefunction of these BSF-bound QW excitons, making them extremely sensitive to potential fluctuations located in and away from BSF. Finally, polarization-dependent measurements show a strong emission anisotropy for BSF-bound QW excitons, which is related to their one-dimensional character and that confirms that the intersection between a BSF and a GaN/(Al,Ga)N QW can be described as a quantum wire

Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells

Microcavity polaritons are strongly interacting hybrid light–matter quasiparticles, which are promising for the development of novel light sources and active photonic devices. Here, we report polariton lasing in the UV spectral range in microring resonators based on GaN/AlGaN slab waveguides, with experiments carried out from 4 K up to room temperature. Stimulated polariton relaxation into multiple ring resonator modes is observed, which exhibit threshold-like dependence of the emission intensity with pulse energy. The strong exciton-photon coupling regime is confirmed by the significant reduction of the free spectral range with energy and the blueshift of the exciton–like modes with increasing pulse energy. Importantly, the exciton emission shows no broadening with power, further confirming that lasing is observed at electron–hole densities well below the Mott transition. Overall, our work paves the way toward the development of novel UV devices based on the high-speed slab waveguide polariton geometry operating up to room temperature with the potential to be integrated into complex photonic circuits

Vortices in polariton OPO superfluids

This chapter reviews the occurrence of quantised vortices in polariton fluids, primarily when polaritons are driven in the optical parametric oscillator (OPO) regime. We first review the OPO physics, together with both its analytical and numerical modelling, the latter being necessary for the description of finite size systems. Pattern formation is typical in systems driven away from equilibrium. Similarly, we find that uniform OPO solutions can be unstable to the spontaneous formation of quantised vortices. However, metastable vortices can only be injected externally into an otherwise stable symmetric state, and their persistence is due to the OPO superfluid properties. We discuss how the currents charactering an OPO play a crucial role in the occurrence and dynamics of both metastable and spontaneous vortices.Comment: 40 pages, 16 figure

Использование новых технических средств, связанных со сканированием сложных 3D-объектов, в обучающем процессе технологических знаний

Материалы XI Междунар. науч. конф. студентов, аспирантов и молодых ученых, Гомель, 17-18 мая 2018 г