The slimming effect of advection on black-hole accretion flows

At super-Eddington rates accretion flows onto black holes have been described as slim (aspect ratio $H/R \lesssim 1$) or thick (H/R >1) discs, also known as tori or (Polish) doughnuts. The relation between the two descriptions has never been established, but it was commonly believed that at sufficiently high accretion rates slim discs inflate, becoming thick. We wish to establish under what conditions slim accretion flows become thick. We use analytical equations, numerical 1+1 schemes, and numerical radiative MHD codes to describe and compare various accretion flow models at very high accretion rates.We find that the dominant effect of advection at high accretion rates precludes slim discs becoming thick. At super-Eddington rates accretion flows around black holes can always be considered slim rather than thick.Comment: 8 pages, 5 figures. Astronomy & Astrophysics, in pres

Ferromagnetism and interlayer exchange coupling in short period (Ga,Mn)As/GaAs superlattices

Magnetic properties of (Ga,Mn)As/GaAs superlattices are investigated. The structures contain magnetic (Ga,Mn)As layers, separated by thin layers of non-magnetic GaAs spacer. The short period Ga$_{0.93}$Mn$_{0.07}$As/GaAs superlattices exhibit a paramagnetic-to-ferromagnetic phase transition close to 60K, for thicknesses of (Ga,Mn)As down to 23 \AA. For Ga$_{0.96}$Mn$_{0.04}$As/GaAs superlattices of similar dimensions, the Curie temperature associated with the ferromagnetic transition is found to oscillate with the thickness of non magnetic spacer. The observed oscillations are related to an interlayer exchange interaction mediated by the polarized holes of the (Ga,Mn)As layers.Comment: REVTeX 4 style; 4 pages, 2 figure

Spatially controlled formation of superparamagnetic (Mn,Ga)As nanocrystals in high temperature annealed (Ga,Mn)As/GaAs superlattices

The annealing-induced formation of (Mn,Ga)As nanocrystals in (Ga,Mn)As/GaAs superlattices was studied by X-ray diffraction, transmission electron microscopy and magnetometry. The superlattice structures with 50 A thick (Ga,Mn)As layers separated by 25, 50 and 100 A thick GaAs spacers were grown by molecular beam epitaxy at low temperature (250 C), and then annealed at high temperatures of: 400, 560 and 630 C. The high temperature annealing causes decomposition to GaMnAs ternary alloy and formation of (Mn,Ga)As nanocrystals inside the GaAs matrix. The nanocrystals are confined in the planes that were formerly occupied by (Ga,Mn)As layers for up to the 560 C of annealing and diffuse throughout the GaAs spacer layers at 630 C annealing. The corresponding magnetization measurements show the evolution of the magnetic properties of as-grown and annealed samples from ferromagnetic, through superparamagnetic to the combination of both.Comment: 14 pages, 3 figure

Ripples Make Waves: Binding Structured Activity and Plasticity in Hippocampal Networks

Establishing novel episodic memories and stable spatial representations depends on an exquisitely choreographed, multistage process involving the online encoding and offline consolidation of sensory information, a process that is largely dependent on the hippocampus. Each step is influenced by distinct neural network states that influence the pattern of activation across cellular assemblies. In recent years, the occurrence of hippocampal sharp wave ripple (SWR) oscillations has emerged as a potentially vital network phenomenon mediating the steps between encoding and consolidation, both at a cellular and network level by promoting the rapid replay and reactivation of recent activity patterns. Such events facilitate memory formation by optimising the conditions for synaptic plasticity to occur between contingent neural elements. In this paper, we explore the ways in which SWRs and other network events can bridge the gap between spatiomnemonic processing at cellular/synaptic and network levels in the hippocampus

Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films

We report a clear correspondence between changes in the Curie temperature and carrier density upon annealing in epitaxially grown (Ga,Mn)As layers with thicknesses in the range between 5 nm and 20 nm. The changes are dependent on the layer thickness, indicating that the (Ga,Mn)As - GaAs interface has importance for the physical properties of the (Ga,Mn)As layer. The magnetoresistance shows additional features when compared to thick (Ga,Mn)As layers, that are at present of unknown origin.Comment: 9 pages, 3 figure

Ferromagnetic GaMnAs/GaAs superlattices - MBE growth and magnetic properties

We have studied the magnetic properties of (GaMnAs)m/(GaAs)n superlattices with magnetic GaMnAs layers of thickness between 8 and 16 molecular layers (ML) (23-45 \AA), and with nonmagnetic GaAs spacers from 4 ML to 10 ML (11-28 \AA). While previous reports state that GaMnAs layers thinner than 50 \AA are paramagnetic in the whole Mn composition range achievable using MBE growth (up to 8% Mn), we have found that short period superlattices exhibit a paramagnetic-to-ferromagnetic phase transition with a transition temperature which depends on both the thickness of the magnetic GaMnAs layer and the nonmagnetic GaAs spacer. The neutron scattering experiments have shown that the magnetic layers in superlattices are ferromagnetically coupled for both thin (below 50 \AA) and thick (above 50 \AA) GaMnAs layers.Comment: Proceedings of 4th International Workshop on Molecular Beam Epitaxy and Vapour Phase Epitaxy Growth Physics and Technology, September 23 - 28 (2001), Warszawa, Poland, to appear in Thin Solid Films. 24 pages, 8 figure

High-Energy Limit of Massless Dirac Fermions in Multilayer Graphene using Magneto-Optical Transmission Spectroscopy

We have investigated the absorption spectrum of multilayer graphene in high magnetic fields. The low energy part of the spectrum of electrons in graphene is well described by the relativistic Dirac equation with a linear dispersion relation. However, at higher energies (>500 meV) a deviation from the ideal behavior of Dirac particles is observed. At an energy of 1.25 eV, the deviation from linearity is 40 meV. This result is in good agreement with the theoretical model, which includes trigonal warping of the Fermi surface and higher-order band corrections. Polarization-resolved measurements show no observable electron-hole asymmetry.Comment: 4 pages,3 figure

Termination dependent topological surface states of the natural superlattice phase Bi4_4Se3_3

We describe the topological surface states of Bi$_4$Se$_3$, a compound in the infinitely adaptive Bi$_2$-Bi$_2$Se$_3$ natural superlattice phase series, determined by a combination of experimental and theoretical methods. Two observable cleavage surfaces, terminating at Bi or Se, are characterized by angle resolved photoelectron spectroscopy and scanning tunneling microscopy, and modeled by ab-initio density functional theory calculations. Topological surface states are observed on both surfaces, but with markedly different dispersions and Kramers point energies. Bi$_4$Se$_3$ therefore represents the only known compound with different topological states on differently terminated surfaces.Comment: 5 figures references added Published in PRB: http://link.aps.org/doi/10.1103/PhysRevB.88.08110