The joint moment generating function of quadratic forms in multivariate autoregressive series - The case with deterministic components

Let {X-t} follow a discrete Gaussian vector autoregression with deterministic components. We derive the exact finite-sample joint moment generating function (MGF) of the quadratic forms that form the basis for the sufficient statistic. The formula is then specialized to the limiting MGF of functionals involving multivariate and univariate Ornstein–Uhlenbeck processes, drifts, and time trends. Such processes arise asymptotically from more general non-Gaussian processes and also from the Gaussian {X-t} and have also been used in areas other than time series,such as the “goodness of fit” literature

"On some definitions in matrix algebra"

Many definitions in matrix algebra are not standardized. This notediscusses some of thepitfalls associated with undesirable orwrong definitions, anddealswith central conceptslikesymmetry, orthogonality, square root, Hermitian and quadratic forms, and matrix derivatives.

Transition times in the Landau-Zener model

This paper presents analytic formulas for various transition times in the Landau-Zener model. Considerable differences are found between the transition times in the diabatic and adiabatic bases, and between the jump time (the time for which the transition probability rises to the region of its asymptotic value) and the relaxation time (the characteristic damping time of the oscillations which appear in the transition probability after the crossing). These transition times have been calculated by using the exact values of the transition probabilities and their derivatives at the crossing point and approximations to the time evolutions of the transition probabilities in the diabatic basis, derived earlier \protect{[}N. V. Vitanov and B. M. Garraway, Phys. Rev. A {\bf 53}, 4288 (1996)\protect{]}, and similar results in the adiabatic basis, derived in the present paper.Comment: 7 pages, two-column revtex style, 5 figures, to appear in Phys. Rev. A (Feb 1999

Optimality criteria without constraint qualications for linear semidenite problems

We consider two closely related optimization problems: a problem of convex Semi- Infinite Programming with multidimensional index set and a linear problem of Semidefinite Programming. In study of these problems we apply the approach suggested in our recent paper [14] and based on the notions of immobile indices and their immobility orders. For the linear semidefinite problem, we define the subspace of immobile indices and formulate the first order optimality conditions in terms of a basic matrix of this subspace. These conditions are explicit, do not use constraint qualifications, and have the form of criterion. An algorithm determining a basis of the subspace of immobile indices in a finite number of steps is suggested. The optimality conditions obtained are compared with other known optimality conditions

Inverse relationship between oligoclonal expanded CD69- TTE and CD69+ TTE cells in bone marrow of multiple myeloma patients.

CD8+CD57+ terminal effector T (TTE) cells are a component of marrow-infiltrating lymphocytes and may contribute to the altered immune responses in multiple myeloma (MM) patients. We analyzed TTE cells in the bone marrow (BM) and peripheral blood (PB) of age-matched controls and patients with monoclonal gammopathy of undetermined significance (MGUS), smoldering MM (SMM), and newly diagnosed (ND) MM using flow cytometry, mass cytometry, and FlowSOM clustering. TTE cells are heterogeneous in all subjects, with BM containing both CD69- and CD69+ subsets, while only CD69- cells are found in PB. Within the BM-TTE compartment, CD69- and CD69+ cells are found in comparable proportions in controls, while CD69- cells are dominant in MGUS and SMM and predominantly either CD69- or CD69+ cells in NDMM. A positive relationship between CD69+TTE and CD69-TTE cells is observed in the BM of controls, lost in MGUS, and converted to an inverse relationship in NDMM. CD69-TTE cells include multiple oligoclonal expansions of T-cell receptor/Vβ families shared between BM and PB of NDMM. Oligoclonal expanded CD69-TTE cells from the PB include myeloma-reactive cells capable of killing autologous CD38hi plasma cells in vitro, involving degranulation and high expression of perforin and granzyme. In contrast to CD69-TTE cells, oligoclonal expansions are not evident within CD69+TTE cells, which possess low perforin and granzyme expression and high inhibitory checkpoint expression and resemble T resident memory cells. Both CD69-TTE and CD69+TTE cells from the BM of NDMM produce large amounts of the inflammatory cytokines interferon-γ and tumor necrosis factor α. The balance between CD69- and CD69+ cells within the BM-TTE compartment may regulate immune responses in NDMM and contribute to the clinical heterogeneity of the disease

Sequence and Structural Convergence of Broad and Potent HIV Antibodies That Mimic CD4 Binding

Passive transfer of broadly neutralizing HIV antibodies can prevent infection, which suggests that vaccines that elicit such antibodies would be protective. Thus far, however, few broadly neutralizing HIV antibodies that occur naturally have been characterized. To determine whether these antibodies are part of a larger group of related molecules, we cloned 576 new HIV antibodies from four unrelated individuals. All four individuals produced expanded clones of potent broadly neutralizing CD4-binding-site antibodies that mimic binding to CD4. Despite extensive hypermutation, the new antibodies shared a consensus sequence of 68 immunoglobulin H (IgH) chain amino acids and arise independently from two related IgH genes. Comparison of the crystal structure of one of the antibodies to the broadly neutralizing antibody VRC01 revealed conservation of the contacts to the HIV spike

HIV therapy by a combination of broadly neutralizing antibodies in humanized mice

Human antibodies to human immunodeficiency virus-1 (HIV-1) can neutralize a broad range of viral isolates in vitro and protect non-human primates against infection. Previous work showed that antibodies exert selective pressure on the virus but escape variants emerge within a short period of time. However, these experiments were performed before the recent discovery of more potent anti-HIV-1 antibodies and their improvement by structure-based design. Here we re-examine passive antibody transfer as a therapeutic modality in HIV-1-infected humanized mice. Although HIV-1 can escape from antibody monotherapy, combinations of broadly neutralizing antibodies can effectively control HIV-1 infection and suppress viral load to levels below detection. Moreover, in contrast to antiretroviral therapy the longer half-life of antibodies led to control of viraemia for an average of 60 days after cessation of therapy. Thus, combinations of potent monoclonal antibodies can effectively control HIV-1 replication in humanized mice, and should be re-examined as a therapeutic modality in HIV-1-infected individuals

Technology and layout-related testing of static random-access memories

Static random-access memories (SRAMs) exhibit faults that are electrical in nature. Functional and electrical testing are performed to diagnose faulty operation. These tests are usually designed from simple fault models that describe the chip interface behavior without a thorough analysis of the chip layout and technology. However, there are certain technology and layout-related defects that are internal to the chip and are mostly time-dependent in nature. The resulting failures may or may not seriously degrade the input/output interface behavior. They may show up as electrical faults (such as a slow access fault) and/or functional faults (such as a pattern sensitive fault). However, these faults cannot be described properly with the functional fault models because these models do not take timing into account. Also, electrical fault models that describe merely the input/output interface behavior are inadequate to characterize every possible defect in the basic SRAM cell. Examples of faults produced by these defects are: (a) static data loss, (b) abnormally high currents drawn from the power supply, etc. Generating tests for such faults often requires a thorough understanding and analysis of the circuit technology and layout. In this article, we shall examine ways to characterize and test such faults. We shall divide such faults into two categories depending on the types of SRAMs they effect—silicon SRAMs and GaAs SRAMs.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/43015/1/10836_2004_Article_BF00972519.pd