Nanoscale ion implantation using focussed highly charged ions

We introduce a focussed ion beam (FIB) based ion implanter equipped with an electron beam ion source (EBIS), able to produce highly charged ions. As an example of its utilisation, we demonstrate the direct writing of nitrogen-vacancy centres in diamond using focussed, mask-less irradiation with Ar8+ ions with sub-micron three dimensional placement accuracy. The ion optical system was optimised and is characterised via secondary electron imaging. The smallest measured foci are below 200 nm, using objective aperture diameters of 5 and 10 µm, showing that nanoscale ion implantation using an EBIS is feasible. © 2020 The Author(s). Published by IOP Publishing Ltd on behalf of the Institute of Physics and Deutsche Physikalische Gesellschaft

Image charge detection statistics relevant for deterministic ion implantation

Image charge detection is a non-perturbative pre-detection approach for deterministic ion implantation. Using low energy ion bunches as a model system for highly charged single ions, we experimentally studied the error and detection rates of an image charge detector setup. The probability density functions of the signal amplitudes in the Fourier spectrum can be modelled with a generalised gamma distribution to predict error and detection rates. It is shown that the false positive error rate can be minimised at the cost of detection rate, but this does not impair the fidelity of a deterministic implantation process. Independent of the ion species, at a signal to-noise ratio of 2, a false positive error rate of 0.1% is achieved, while the detection rate is about 22

Detection of small bunches of ions using image charges

A concept for detection of charged particles in a single fly-by, e.g. within an ion optical system for deterministic implantation, is presented. It is based on recording the image charge signal of ions moving through a detector, comprising a set of cylindrical electrodes. This work describes theoretical and practical aspects of image charge detection (ICD) and detector design and its application in the context of real time ion detection. It is shown how false positive detections are excluded reliably, although the signal-to-noise ratio is far too low for time-domain analysis. This is achieved by applying a signal threshold detection scheme in the frequency domain, which - complemented by the development of specialised low-noise preamplifier electronics - will be the key to developing single ion image charge detection for deterministic implantation

Image Charge Detection for Deterministic Ion Implantation

Image charge detection is presented as a possible candidate to realise deterministic ion implantation. The deterministic placement of single impurities in solid substrates will enable a variety of novel applications, using their quantum mechanical properties for sensors or qubit registers. In this work, experimental techniques are used together with theoretical calculations to develop, characterise and optimise the detection of charged objects in a single pass through an image charge detector. In the main experimental part, ion bunches are employed as a model system for highly charged ions in proof-of-principle measurements with detector prototypes built in our labs. Image charge signals are characterised in the time and frequency domain. Using a statistical measurement and data analysis protocol, the noise and signal probability density functions are determined to calculate error and detection rates. It was found that even at an extremely low signal-to-noise ratio of 2, error rates can be suppressed effectively for high fidelity implantation. Aiming to improve the sensitivity, the maximum possible signal-to-noise ratio is calculated and discussed in dependence on the design parameters of an optimised image charge detector and the kinetic ion parameters. Lastly, a new ion implantation set-up combining focused ion beam technology with a source able to produce highly charged ions is introduced

Image charge detection statistics relevant for deterministic ion implantation

Image charge detection is a non-perturbative pre-detection approach for deterministic ion implantation. Using low energy ion bunches as a model system for highly charged single ions, we experimentally studied the error and detection rates of an image charge detector setup. The probability density functions of the signal amplitudes in the Fourier spectrum can be modelled with a generalised gamma distribution to predict error and detection rates. It is shown that the false positive error rate can be minimised at the cost of detection rate, but this does not impair the fidelity of a deterministic implantation process. Independent of the ion species, at a signal to-noise ratio of 2, a false positive error rate of 0.1% is achieved, while the detection rate is about 22

Image charge detection statistics relevant for deterministic ion implantation

Image charge detection is a non-perturbative pre-detection approach for deterministic ion implantation. Using low energy ion bunches as a model system for highly charged single ions, we experimentally studied the error and detection rates of an image charge detector setup. The probability density functions of the signal amplitudes in the Fourier spectrum can be modelled with a generalised gamma distribution to predict error and detection rates. It is shown that the false positive error rate can be minimised at the cost of detection rate, but this does not impair the fidelity of a deterministic implantation process. Independent of the ion species, at a signal to-noise ratio of 2, a false positive error rate of 0.1% is achieved, while the detection rate is about 22