Influence of Ar/O2 ratio during IGZO deposition on the electrical characteristics of a-IGZO TFT with HfLaO gate dilectric

In this work, the influence of Ar/O2 ratio during InGaZnO (IGZO) deposition on the electrical characteristics of a-IGZO thin-film transistor (TFT) with HtLaO gate dielectric has been investigated. It is found that lowering the oxygen concentration in the a-IGZO sputtering ambient can effectively improve the device performance, including carrier mobility (µ sat), threshold voltage (V th), sub-threshold slope (SS) and on-off current ratio (I on/I off) Moreover, the hyster…published_or_final_versio

Effects of Ta incorporation in La2O3 gate dielectric of InGaZnO thin-film transistor

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A Study on the Electrical Characteristics of InGaZnO Thin-Film Transistor with HfLaO Gate Dielectric Annealed in Different Gases

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Fluorinated InGaZnO Thin-Film Transistor With HfLaO Gate Dielectric

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The molecular biological expression of SDF-1 and VEGF in rat diabetic retinopathy and the intervention effect of AMD3100

AIM: To measure the expression of stromal cell derived factor-1(SDF-1)and vascular endothelial growth factor(VEGF)in retina of diabetic rats model at the different stage and explore the inhibitory effect of AMD3100 on the expression of SDF-1 and VEGF mRNA by RT-PCR and Western-Blot test.<p>METHODS: RT-PCR and Western-Blot tests were carried out. In RT-PCR test, 60 adult SD rats were divided into normal group, antagonist group, and diabetes group. After diabetic rat model was induced using streptozotocin and antagonist group and diabetic group were injected intravitreously and postocularly with AMD3100 and PBS respectively. All rats were killed and the retina was extracted. after 1,3,5 months and the HE stain of paraffin sections was used and the expression of SDF-1 and VEGF mRNA were measured with RT-PCR. In Western-Blot test, 18 rats were divided into normal group, diabetes group and four antagonist groups which were using different concentration of AMD3100, and killed after 3 months.<p>RESULTS: SDF-1 and VEGF mRNA were expressed in normal group, antagonist group and diabetes group. At the same age group(1, 3 and 5 months)and among the normal group, antagonist group and diabetes group, the difference of expression of SDF-1 and VEGF mRNA were significant. The expressions in diabetic group were always highest and antagonist group lower than diabetic group. The expression of SDF-1 and VEGF mRNA was increased significantly with the extension of disease. The HE Stain of paraffin sections showed DM group had more cell nucleus which protruded internal limited membranes than normal control group and antagonist group. The Western-Blot test showed in 4 antagonist groups the SDF -1 and VEGF protein expression levels gradually decreased with the increases of SDF-1 antagonist AMD3100 concentration, the difference was significant. When intravitreous injected concentration of AMD3100 increased over 10μg/μL, the expression of SDF-1 and VEGF protein did not change, the difference was not statistically significant<p>CONCLUSION: With the progression of diabetic retinopathy, the expression of VEGF and SDF-1 mRNA in the retinal tissue of diabetic rats increased. The antagonist AMD3100 could reduce the expression of SDF-l, VEGF and inhibit the development of new blood vessels. In a certain concentration range, this inhibitory effect of AMD3100 was dose-dependent

Effects of Ta incorporation in Y2O3 gate dielectric of InGaZnO thin-film transistor

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Effects of fluorine incorporation on the electrical properties of silicon MOS capacitor with La2O3 gate dielectric

In this work, the effects of fluorine incorporation by using plasma on the electrical properties of Si MOS capacitor with La2O3 gate dielectric are investigated. From the capacitance-voltage (C-V) curve and gate leakage current, it is demonstrated that the F-plasma treatment can effectively suppress the growth of interfacial layer, and thus improve the electrical properties of the device in terms of accumulation capacitance, interface-state density and breakdown voltage. © 2011 IEEE.published_or_final_versio