In this work, the influence of Ar/O2 ratio during InGaZnO (IGZO) deposition on the electrical characteristics of a-IGZO thin-film transistor (TFT) with HtLaO gate dielectric has been investigated. It is found that lowering the oxygen concentration in the a-IGZO sputtering ambient can effectively improve the device performance, including carrier mobility (µ sat), threshold voltage (V th), sub-threshold slope (SS) and on-off current ratio (I on/I off) Moreover, the hyster…published_or_final_versio
