Critical point for the CAF-F phase transition at charge neutrality in bilayer graphene

We report on magneto-transport measurements up to 30 T performed on a bilayer graphene Hall bar, enclosed by two thin hexagonal boron nitride flakes. Our high mobility sample exhibits an insulating state at neutrality point which evolves into a metallic phase when a strong in-plane field is applied, as expected for a transition from a canted antiferromagnetic to a ferromagnetic spin ordered phase. For the first time we individuate a temperature-independent crossing in the four-terminal resistance as a function of the total magnetic field, corresponding to the critical point of the transition. We show that the critical field scales linearly with the perpendicular component of the field, as expected from the underlying competition between the Zeeman energy and interaction-induced anisotropies. A clear scaling of the resistance is also found and an universal behavior is proposed in the vicinity of the transition

Field-induced insulating states in a graphene superlattice

We report on high-field magnetotransport (B up to 35 T) on a gated superlattice based on single-layer graphene aligned on top of hexagonal boron nitride. The large-period moir\'e modulation (15 nm) enables us to access the Hofstadter spectrum in the vicinity of and above one flux quantum per superlattice unit cell (Phi/Phi_0 = 1 at B = 22 T). We thereby reveal, in addition to the spin-valley antiferromagnet at nu = 0, two insulating states developing in positive and negative effective magnetic fields from the main nu = 1 and nu = -2 quantum Hall states respectively. We investigate the field dependence of the energy gaps associated with these insulating states, which we quantify from the temperature-activated peak resistance. Referring to a simple model of local Landau quantization of third generation Dirac fermions arising at Phi/Phi_0 = 1, we describe the different microscopic origins of the insulating states and experimentally determine the energy-momentum dispersion of the emergent gapped Dirac quasi-particles

Anisotropic and strong negative magneto-resistance in the three-dimensional topological insulator Bi2Se3

We report on high-field angle-dependent magneto-transport measurements on epitaxial thin films of Bi2Se3, a three-dimensional topological insulator. At low temperature, we observe quantum oscillations that demonstrate the simultaneous presence of bulk and surface carriers. The magneto- resistance of Bi2Se3 is found to be highly anisotropic. In the presence of a parallel electric and magnetic field, we observe a strong negative longitudinal magneto-resistance that has been consid- ered as a smoking-gun for the presence of chiral fermions in a certain class of semi-metals due to the so-called axial anomaly. Its observation in a three-dimensional topological insulator implies that the axial anomaly may be in fact a far more generic phenomenon than originally thought.Comment: 6 pages, 4 figure

Syndromes associated with mitochondrial DNA depletion

This is an Open Access article distributed under the terms of the Creative Commons Attribution License.Mitochondrial dysfunction accounts for a large group of inherited metabolic disorders most of which are due to a dysfunctional mitochondrial respiratory chain (MRC) and, consequently, deficient energy production. MRC function depends on the coordinated expression of both nuclear (nDNA) and mitochondrial (mtDNA) genomes. Thus, mitochondrial diseases can be caused by genetic defects in either the mitochondrial or the nuclear genome, or in the cross-talk between the two. This impaired cross-talk gives rise to so-called nuclear-mitochondrial intergenomic communication disorders, which result in loss or instability of the mitochondrial genome and, in turn, impaired maintenance of qualitative and quantitative mtDNA integrity. In children, most MRC disorders are associated with nuclear gene defects rather than alterations in the mtDNA itself.The mitochondrial DNA depletion syndromes (MDSs) are a clinically heterogeneous group of disorders with an autosomal recessive pattern of transmission that have onset in infancy or early childhood and are characterized by a reduced number of copies of mtDNA in affected tissues and organs. The MDSs can be divided into least four clinical presentations: hepatocerebral, myopathic, encephalomyopathic and neurogastrointestinal. The focus of this review is to offer an overview of these syndromes, listing the clinical phenotypes, together with their relative frequency, mutational spectrum, and possible insights for improving diagnostic strategies.CN was supported by the Portuguese Foundation for Science and Technology (SFRH/BD/45247/2008). LSA was supported by the Portuguese Foundation for Science and Technology (FCT C2008/INSA/P4)

Diversidade de psilídeos (Hemiptera: Psylloidea) em Sorriso, MT.

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Ocorrência de Isogonoceraia divergipennis White & Hodkinson (1980) associado a Caesalpinia pluviosa (Fabaceae) em Mato Grosso, Brasil.

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Spherical orbit closures in simple projective spaces and their normalizations

Let G be a simply connected semisimple algebraic group over an algebraically closed field k of characteristic 0 and let V be a rational simple G-module of finite dimension. If G/H \subset P(V) is a spherical orbit and if X is its closure, then we describe the orbits of X and those of its normalization. If moreover the wonderful completion of G/H is strict, then we give necessary and sufficient combinatorial conditions so that the normalization morphism is a homeomorphism. Such conditions are trivially fulfilled if G is simply laced or if H is a symmetric subgroup.Comment: 24 pages, LaTeX. v4: Final version, to appear in Transformation Groups. Simplified some proofs and corrected minor mistakes, added references. v3: major changes due to a mistake in previous version

High-speed double layer graphene electro-absorption modulator on SOI waveguide

We report on a C-band double layer graphene electro-absorption modulator on a passive SOI platform showing 29GHz 3dB-bandwith and NRZ eye-diagrams extinction ratios ranging from 1.7 dB at 10 Gb/s to 1.3 dB at 50 Gb/s. Such high modulation speed is achieved thanks to the quality of the CVD pre-patterned single crystal growth and transfer on wafer method that permitted the integration of high-quality scalable graphene and low contact resistance. By demonstrating this high-speed CVD graphene EAM modulator integrated on Si photonics and the scalable approach, we are confident that graphene can satisfy the main requirements to be a competitive technology for photonics