Towards F1 Hybrid Seed Potato Breeding

Compared to other major food crops, progress in potato yield as the result of breeding efforts is very slow. Genetic gains cannot be fixed in potato due to obligatory out-breeding. Overcoming inbreeding depression using diploid self-compatible clones should enable to replace the current method of out-breeding and clonal propagation into an F1 hybrid system with true seeds. This idea is not new, but has long been considered unrealistic. Severe inbreeding depression and self-incompatibility in diploid germplasm have hitherto blocked the development of inbred lines. Back-crossing with a homozygous progenitor with the Sli gene which inhibits gametophytic self-incompatibility gave self-compatible offspring from elite material from our diploid breeding programme. We demonstrate that homozygous fixation of donor alleles is possible, with simultaneous improvement of tuber shape and tuber size grading of the recipient inbred line. These results provide proof of principle for F1 hybrid potato breeding. The technical and economic perspectives are unprecedented as these will enable the development of new products with combinations of useful traits for all stakeholders in the potato chain. In addition, the hybrid’s seeds are produced by crossings, rendering the production and voluminous transport of potato seed tubers redundant as it can be replaced by direct sowing or the use of healthy mini-tubers, raised in greenhouses

Direct measurement of the radiative lifetime of vibrationally excited OH radicals

Neutral molecules, isolated in the gas-phase, can be prepared in a long-lived excited state and stored in a trap. The long observation time afforded by the trap can then be exploited to measure the radiative lifetime of this state by monitoring the temporal decay of the population in the trap. This method is demonstrated here and used to benchmark the Einstein $A$-coefficients in the Meinel system of OH. A pulsed beam of vibrationally excited OH radicals is Stark decelerated and loaded into an electrostatic quadrupole trap. The radiative lifetime of the upper $\Lambda$-doublet component of the $X ^2\Pi_{3/2}, v=1, J=3/2$ level is determined as $59.0 \pm 2.0$ ms, in good agreement with the calculated value of $57.7 \pm 1.0$ ms.Comment: 4 pages, 3 figures, submitted to Phys. Rev. Let

Atom lithography without laser cooling

Using direct-write atom lithography, Fe nanolines are deposited with a pitch of 186 nm, a full width at half maximum (FWHM) of 50 nm, and a height of up to 6 nm. These values are achieved by relying on geometrical collimation of the atomic beam, thus without using laser collimation techniques. This opens the way for applying direct-write atom lithography to a wide variety of elements.Comment: 7 pages, 11 figure

Fabrication and electrical transport properties of embedded graphite microwires in a diamond matrix

Micrometer width and nanometer thick wires with different shapes were produced \approx 3~\upmum below the surface of a diamond crystal using a microbeam of He$^+$ ions with 1.8~MeV energy. Initial samples are amorphous and after annealing at $T\approx 1475$~K, the wires crystallized into a graphite-like structures, according to confocal Raman spectroscopy measurements. The electrical resistivity at room temperature is only one order of magnitude larger than the in-plane resistivity of highly oriented pyrolytic bulk graphite and shows a small resistivity ratio($\rho(2{\rm K})/\rho(315{\rm K}) \approx 1.275$). A small negative magnetoresistance below $T=200$~K was measured and can be well understood taking spin-dependent scattering processes into account. The used method provides the means to design and produce millimeter to micrometer sized conducting circuits with arbitrary shape embedded in a diamond matrix.Comment: 12 pages, 5 figures, to be published in Journal of Physics D: Applied Physics (Feb. 2017

O₂ photoabsorption in the 40 950–41 300 cm⁻¹ region: New Herzberg bands, new absorption lines, and improved spectroscopic data

The technique of cavity ring‐down (CRD) spectroscopy is particularly useful for measuring absorptions of very weak optical transitions. We have in this manner investigated the 40 950–41 300 cm−1 region in O2, where only absorption in the O2(A 3Σ+u–X 3Σ−g) 11‐0 band had been previously identified. Five new bands have been discovered in this range—the A′ 3Δu–X 3Σ−g 12‐0 and 13‐0 bands, the c 1Σ−u–X 3Σ−g 17‐0 and 18‐0 bands, and the A 3Σ+u−X 3Σ−g 12‐0 band. The origins of the F1 and F2 components of the latter lie only 7 cm−1 below the lowest dissociation limit, and 15 lines have been identified. No F3 levels were observed; apparently all are above the dissociation limit. The high instrumental sensitivity of the CRD technique has allowed observation of weak lines of the A–X 11‐0 band, and 12 of the 13 branches have been identified and their intensities measured. A very low upper limit has been set on the intensity of the thirteenth branch, Q13. We find 107 unidentified lines in the region, the stronger ones (19) lying in the vicinity of lines of the A–X 11‐0 band. The weaker ones (88) are spread throughout the spectral region, up to and even beyond the O2dissociation limit, and probably have their origin in transitions to very weakly bound O2 states, which may have atmospheric significance. These weaker lines have intensities that are typically 1%–5% of the strong A–X 11‐0 band lines

Single-photon-emitting optical centers in diamond fabricated upon Sn implantation

The fabrication of luminescent defects in single-crystal diamond upon Sn implantation and annealing is reported. The relevant spectral features of the optical centers (emission peaks at 593.5 nm, 620.3 nm, 630.7 nm and 646.7 nm) are attributed to Sn-related defects through the correlation of their photoluminescence (PL) intensity with the implantation fluence. Single Sn-related defects were identified and characterized through the acquisition of their second-order auto-correlation emission functions, by means of Hanbury-Brown-Twiss interferometry. The investigation of their single-photon emission regime as a function of excitation laser power revealed that Sn-related defects are based on three-level systems with a 6 ns radiative decay lifetime. In a fraction of the studied centers, the observation of a blinking PL emission is indicative of the existence of a dark state. Furthermore, absorption dependence from the polarization of the excitation radiation with about 45 percent contrast was measured. This work shed light on the existence of a new optical center associated with a group-IV impurity in diamond, with similar photo-physical properties to the already well-known Si-V and Ge-V emitters, thus providing results of interest from both the fundamental and applicative points of view.Comment: 10 pages, 4 figure

Competition between electric field and magnetic field noise in the decoherence of a single spin in diamond

We analyze the impact of electric field and magnetic field fluctuations in the decoherence of the electronic spin associated with a single nitrogen-vacancy (NV) defect in diamond by engineering spin eigenstates protected either against magnetic noise or against electric noise. The competition between these noise sources is analyzed quantitatively by changing their relative strength through modifications of the environment. This study provides significant insights into the decoherence of the NV electronic spin, which is valuable for quantum metrology and sensing applications.Comment: 8 pages, 4 figures, including supplementary information