The fabrication of luminescent defects in single-crystal diamond upon Sn
implantation and annealing is reported. The relevant spectral features of the
optical centers (emission peaks at 593.5 nm, 620.3 nm, 630.7 nm and 646.7 nm)
are attributed to Sn-related defects through the correlation of their
photoluminescence (PL) intensity with the implantation fluence. Single
Sn-related defects were identified and characterized through the acquisition of
their second-order auto-correlation emission functions, by means of
Hanbury-Brown-Twiss interferometry. The investigation of their single-photon
emission regime as a function of excitation laser power revealed that
Sn-related defects are based on three-level systems with a 6 ns radiative decay
lifetime. In a fraction of the studied centers, the observation of a blinking
PL emission is indicative of the existence of a dark state. Furthermore,
absorption dependence from the polarization of the excitation radiation with
about 45 percent contrast was measured. This work shed light on the existence
of a new optical center associated with a group-IV impurity in diamond, with
similar photo-physical properties to the already well-known Si-V and Ge-V
emitters, thus providing results of interest from both the fundamental and
applicative points of view.Comment: 10 pages, 4 figure
