Economic Impacts of Investment Facilitation

After the successful adoption of the Trade Facilitation Agreement (TFA) in 2014, investment facilitation is gaining importance as the next policy priority for a plurilateral agreement under the World Trade Organization (WTO). In fact, more than 110 WTO Members aim to conclude the negotiations on the Investment Facilitation for Development (IFD) Agreement by mid-2023 after only three years of formal negotiations. Investment facilitation refers to actions taken by governments designed to attract foreign investment and maximize the effectiveness and efficiency of its administration through all stages of the investment cycle. The IFD agreement focuses on allowing investment to flow efficiently for the greatest benefit, particularly to developing and least developed member countries, with the aim of fostering sustainable development. The flow of efficiency is improved through transparency, predictability, and efficient frameworks with streamlined procedures. In addition, the agreement aims at improving intra-governmental coordination and international cooperation on investment matters. To provide policymakers with essential information for ongoing negotiations and to fill an existing research gap on investment facilitation, we examine the economic impacts of a potential IFD agreement. Generally, quantifying such impacts is predicated on an assessment of current frictions that limit investment on an international basis and the mechanism by which policy impacts these frictions

Фотолюмінесценція стекол 70Ga2S3 – 30La2S3 легованих Ербієм

Glasses of the composition (70–X) mol.% Ga2S3 - 30 mol.% La2S3 - X Er2S3 (at X = 0, 1, 3) were synthesized  and the optical absorption spectra at room temperature were studied. Photoluminescence spectra in the 2.53 - 0.73eV range at 300 and 80K were investigated. Intense PL maxima at 2.25, 1.88, 1.45, 1.26, 1.13, 0.81 eV were found which correspond to transitions in the f-shell of erbium ions. The redistribution of the intensity of PL peaks with temperature was analyzed based on the energy transition diagram of erbium ions.Синтезовано стекла (70-X) mol % Ga2S3 - 30 mol % La2S3 - X Er2S3 (при Х = 0, 1, 3) та досліджено спектри оптичного поглинання за кімнатної температури. Проаналізовано спектри фотолюмінесценції в діапазоні 2,53 - 0,73 еВ при температурі 300 та 80 К. Встановлено інтенсивні ФЛ максимуми 2,25, 1,88, 1,45, 1,26, 1,13, 0,81 еВ, що відповідають переходам в f-оболонці іонів Ербію. На основі діаграми енергетичних переходів в іонах Ербію проаналізовано перерозподіл інтенсивності між максимумами ФЛ при зміні температури

Topological insulators in the quaternary chalcogenide compounds and ternary famatinite compounds

We present first-principles calculations to predict several three dimensional (3D) topological insulators in quaternary chalcogenide compounds which are made of I$_2$-II-IV-VI$_4$ compositions and in ternary compositions of I$_3$-V-VI$_4$ famatinite compounds. Among the large members of these two families, we give examples of naturally occurring compounds which are mainly Cu-based chalcogenides. We show that these materials are candidates of 3D topological insulators or can be tuned to obtain topological phase transition by manipulating the atomic number of the other cation and anion elements. A band inversion can occur at a single point $\Gamma$ with considerably large inversion strength, in addition to the opening of a bulk band gap throughout the Brillouin zone. We also demonstrate that both of these families are related to each other by cross-substitutions of cations in the underlying tetragonal structure and that one can suitably tune their topological properties in a desired manner.Comment: 7 pages, 4 figure

Investigation of the Systems Сu(Ag)In5S8 − FeIn2S4

Використовуючи методи диференційно-термічного та рентгенофазового аналізів, досліджено фазові рів- новаги перерізів Сu(Ag)In5S8 – FeIn2S4. Сполуки СuIn5S8 та AgIn5S8 утворюють НРТР зі сполукою FeIn2S4. Пере- різ AgIn5S8 – FeIn2S4 є квазібінарним (І тип за класифікацією Розебома), СuIn5S8 − FeIn2S4 є частково квазібі- нарним, що зумовлено інконгруентним типом утворення СuIn5S8. Ці сполуки кристалізуються в структурному типі шпінели (ПГ Fd 3 m). Using differential thermal and X-ray phase analysis methods, phase equilibria at the Сu(Ag)In5S8 − FeIn2S4 section were investigated. Compounds СuIn5S8 and AgIn5S8 forms continuous solid solution series with FeIn2S4. The section AgIn5S8 − FeIn2S4 is quasi-binary (belongs to Roozeboom I type), section СuIn5S8 − FeIn2S4 is partially non-quasibinary due to the incongruent type of the formation of СuIn5S8. The all compounds has crystal structure of the spinel type (S.G. Fd3 m)

The Isothermal Section of Ag 2 Se–CdSe–In 2 Se 3 System at 820 K.

Методами рентгенофазового, мікроструктурного аналізів та вимірюванням мікротвердості досліджено квазіпотрійну систему Ag2Se–CdSe–In2Se3. За результатами досліджень та літературними даними побудовано ізотермічний переріз при 820 К. Встановлено існування тетрарної сполуки Ag0,4Cd0,4In6,3Se10. The quasi-ternary system Ag2Se–CdSe–In2Se3 was investigated by XRD and microstructure analysis and microhardness measurements. The isothermal section at 820 K was constructed from the investigation results and literature data. The existence of a quaternary compound Ag0,4Cd0,4In6,3Se10 was istablished

AgInSe2 – AgGaSe2 and AgInSe2 – Ag9GaSe6 systems

Враховуючи дані, отримані за результатами РФА, МСА, ДТА та поміру мікротвердості, було побудовано діаграми стану систем AgInSe2 – AgGaSe2 та AgInSe2 – Ag9GaSe6. У системі AgInSe2 – AgGaSe2 існує евтектична точка LE ↔ α + β при 1030 К та 24 мол. % AgGaSe2, де α – тверді розчини на основі високотемпературної модифікації (ВТМ) AgInSe2, β – тверді розчини на основі сполуки AgGaSe2 та низькотемпературної модифікації (НТМ) AgInSe2. Нескінченний ряд β-твердих розчинів кристалізується в структурі халькопіриту. В системі AgInSe2 – Ag9GaSe6 існує евтектична точка LE ↔α + γ при 960 К та 60 мол. % AgGaSe2. According to the data obtained from the results of X-ray, X-ray structural, microstructural, differential-thermal analysis and measurement of microhardness, phase diagrams of the systems AgInSe 2 – AgGaSe2 and AgInSe2 – Ag9GaSe6 were constructed. There is eutectic point LE ↔ α + β at 1030 К and 24 mol. % AgGaSe2 in the AgInSe2 – AgGaSe2 system, where α – solid solutions based on the high-temperature modification (HTM) of AgInSe 2, β – solid solutions based on the compound AgGaSe2 and low-temperature modification (LTM) of AgInSe 2. A continuous series of β-solid solutions crystallize in the chalcopyrite structure. There is eutectic point L E ↔ α + γ at 960 К and 60 mol. % AgGaSe2 in the AgInSe2 – Ag9GaSe6 system

The Phase Equilibria in the Quasiternary System Ag 2 Se–Ga 2 Se 3 –ZnSe.

Система Ag2Se–Ga2Se3–ZnSe досліджувалася методами РФА та ДТА аналізу. Для даної системи характерна складна взаємодія фаз із утворенням твердих розчинів значної протяжності. Для системи Ag2Se–Ga2Se3–ZnSe характерне утворення твердого розчину значної протяжності на основі Ga2Se3. The system Ag2Se–Ga2Se3–ZnSe was probed the methods of RFA and DTA of analysis. For this system the characteristic difficult co-operating of phases is with formation of hard solutions of considerable slowness. For the system Ag2Se–Ga2Se3–ZnSe characteristic formation of hard solution of considerable slowness is on the basis of Ga2Se3

Isothermal sections of the systems Y(La)2Sе3–In2Se3–PbSe at 870 K

Взаємодію між компонентами в системах Y(La)2Sе3–In2Se3–PbSe при 870 K досліджено методом рентгенівської порошкової дифрактометрії. В системах не виявлено існування тетрарних сполук. The interactions between the components in the Y2Sе3–In2Se3–PbSe and La2Sе3–In2Se3–PbSe system at 870 К were determined using X-ray powder diffraction. No quaternary compounds exist in the investigated systems