Multiscale approaches to high efficiency photovoltaics

While renewable energies are achieving parity around the globe, efforts to reach higher solar cell efficiencies becomes ever more difficult as they approach the limiting efficiency. The so-called third generation concepts attempt to break this limit through a combination of novel physical processes and new materials and concepts in organic and inorganic systems. Some examples of semi-empirical modelling in the field are reviewed, in particular for multispectral solar cells on silicon (french ANR project MULTISOLSI). Their achievements are outlined, and the limits of these approaches shown. This introduces the main topic of this contribution, which is the use of multiscale experimental and theoretical techniques to go beyond the semi-empirical understanding of these systems. This approach has already led to great advances at modelling which have led to modelling software which is widely known. Yet a survey of the topic reveals a fragmentation of efforts across disciplines, firstly, such as organic and inorganic fields, but also between the high efficiency concepts such as hot carrier cells and intermediate band concepts. We show how this obstacle to the resolution of practical research obstacles may be lifted by inter-disciplinary cooperation across length scales, and across experimental and theoretical fields, and finally across materials systems. We present a European COST Action MultiscaleSolar kicking off in early 2015 which brings together experimental and theoretical partners in order to develop multiscale research in organic and inorganic materials. The goal of this defragmentation and interdisciplinary collaboration is to develop understanding across length scales which will enable the full potential of third generation concepts to be evaluated in practise, for societal and industrial applications.Comment: Draft paper accompanying a plenary presentation to the World Renewable Energy Conference WREC 2015, June 2015, Bucharest. In press (IOP

How fast can vanadium dioxide neuron-mimicking devices oscillate? Physical mechanisms limiting the frequency of vanadium dioxide oscillators

The frequency of vanadium dioxide (VO2) oscillators is a fundamental figure of merit for the realization of neuromorphic circuits called oscillatory neural networks (ONNs) since the high frequency of oscillators ensures low-power consuming, real-time computing ONNs. In this study, we perform electrothermal 3D technology computer-aided design (TCAD) simulations of a VO2 relaxation oscillator. We find that there exists an upper limit to its operating frequency, where such a limit is not predicted from a purely circuital model of the VO2 oscillator. We investigate the intrinsic physical mechanisms that give rise to this upper limit. Our TCAD simulations show that it arises a dependence on the frequency of the points of the curve current versus voltage across the VO2 device corresponding to the insulator-to-metal transition (IMT) and metal-to-insulator transition (MIT) during oscillation, below some threshold values of $C_{\mathrm{ext}}$. This implies that the condition for the self-oscillatory regime may be satisfied by a given load-line in the low-frequency range but no longer at higher frequencies, with consequent suppression of oscillations. We note that this variation of the IMT/MIT points below some threshold values of $C_{\mathrm{ext}}$ is due to a combination of different factors: intermediate resistive states achievable by VO2 channel and the interplay between frequency and heat transfer rate. Although the upper limit on the frequency that we extract is linked to the specific VO2 device we simulate, our findings apply qualitatively to any VO2 oscillator. Overall, our study elucidates the link between electrical and thermal behavior in VO2 devices that sets a constraint on the upper values of the operating frequency of any VO2 oscillator

Current Status and Opportunities of Organic Thin-Film Transistor Technologies

Ajudes: National Key Research and Development Program of "Strategic Advanced Electronic Materials" under Grant 2016YFB0401100 and in part by the NSFC of China under Grant 61274083 and Grant 61334008.Attributed to its advantages of super mechanical flexibility, very low-temperature processing, and compatibility with low cost and high throughput manufacturing, organic thin-film transistor (OTFT) technology is able to bring electrical, mechanical, and industrial benefits to a wide range of new applications by activating nonflat surfaces with flexible displays, sensors, and other electronic functions. Despite both strong application demand and these significant technological advances, there is still a gap to be filled for OTFT technology to be widely commercially adopted. This paper providesa comprehensive reviewof the current status of OTFT technologies ranging from material, device, process, and integration, to design and system applications, and clarifies the real challenges behind to be addressed

Truly form-factor–free industrially scalable system integration for electronic textile architectures with multifunctional fiber devices

Funding Information: This work was supported by the European Commission (H2020, 1D-NEON, grant agreement ID: 685758). J.M.K. and L.G.O. acknowledge the support from the U.K. Research and Innovation (EPSRC, EP/P027628/1). We thank Y. Bernstein and J. Faulkner for helping with grammar check. Funding Information: Acknowledgments Funding:ThisworkwassupportedbytheEuropeanCommission(H2020,1D-NEON,grant agreementID:685758).J.M.K.andL.G.O.acknowledgethesupportfromtheU.K.Researchand Innovation(EPSRC,EP/P027628/1).W ethankY .BernsteinandJ.Faulknerforhelpingwith grammarcheck.Authorcontributions:S.L.andJ.M.K.conceivedtheproject.S.L.,L.G.O.,P .B., R.Martins,andJ.M.K.supervisedtheproject.S.L.andH.L.developedF-PD.S.L.,Y .-W .L., G.-H.A., D.-W .S., J.I.S.,andS.C.developedF-SC.C.L.F ., A.S.,R.I.,P .B., andR.Martinsdevelopedfiber transistor.S.L.,H.L.,andS.C.developedF-LED.ThefiberdeviceswereevaluatedbyS.L.,H.W .C., D.-W .S., H.L.,S.J.,S.D.H.,S.Y .B., S.Z.,W .H.-C., Y .-H.S., X.-B.F ., T .H.L., J.-W .J., andY .K. The developmentofweavingprocesswasconductedbyS.L.,H.W .C., F .M.M., P .J., andV .G.C. Thelaser interconnectionwasdevelopedbyS.L.,H.W .C., K.U.,M.E.,andM.S.Thetextiledemonstrations werecharacterizedbyS.L.,H.W .C., D.-W .S., J.Y ., S.S.,U.E.,S.N.,A.C.,A.M.,R.Momentè,J.G.,N.D., S.M.,C.-H.K.,M.L.,A.N.,D.J.,M.C.,andY .C. ThismanuscriptwaswrittenbyS.L.andJ.M.K.and reviewed by H.W .C., D.-W .S., M.C.,L.G.O., P .B., E.F ., and G.A.J.A. All authors discussed the results andcommentedonthemanuscript.Competinginterests:Theauthorsdeclarethattheyhave nocompetinginterests.Dataandmaterialsavailability:Alldataneededtoevaluatethe conclusionsinthepaperarepresentinthepaperand/ortheSupplementaryMaterials. Publisher Copyright: Copyright © 2023 The Authors, some rights reserved.An integrated textile electronic system is reported here, enabling a truly free form factor system via textile manufacturing integration of fiber-based electronic components. Intelligent and smart systems require freedom of form factor, unrestricted design, and unlimited scale. Initial attempts to develop conductive fibers and textile electronics failed to achieve reliable integration and performance required for industrial-scale manufacturing of technical textiles by standard weaving technologies. Here, we present a textile electronic system with functional one-dimensional devices, including fiber photodetectors (as an input device), fiber supercapacitors (as an energy storage device), fiber field-effect transistors (as an electronic driving device), and fiber quantum dot light-emitting diodes (as an output device). As a proof of concept applicable to smart homes, a textile electronic system composed of multiple functional fiber components is demonstrated, enabling luminance modulation and letter indication depending on sunlight intensity.publishersversionpublishe

General anaesthetic and airway management practice for obstetric surgery in England: a prospective, multi-centre observational study

There are no current descriptions of general anaesthesia characteristics for obstetric surgery, despite recent changes to patient baseline characteristics and airway management guidelines. This analysis of data from the direct reporting of awareness in maternity patients' (DREAMY) study of accidental awareness during obstetric anaesthesia aimed to describe practice for obstetric general anaesthesia in England and compare with earlier surveys and best-practice recommendations. Consenting patients who received general anaesthesia for obstetric surgery in 72 hospitals from May 2017 to August 2018 were included. Baseline characteristics, airway management, anaesthetic techniques and major complications were collected. Descriptive analysis, binary logistic regression modelling and comparisons with earlier data were conducted. Data were collected from 3117 procedures, including 2554 (81.9%) caesarean deliveries. Thiopental was the induction drug in 1649 (52.9%) patients, compared with propofol in 1419 (45.5%). Suxamethonium was the neuromuscular blocking drug for tracheal intubation in 2631 (86.1%), compared with rocuronium in 367 (11.8%). Difficult tracheal intubation was reported in 1 in 19 (95%CI 1 in 16-22) and failed intubation in 1 in 312 (95%CI 1 in 169-667). Obese patients were over-represented compared with national baselines and associated with difficult, but not failed intubation. There was more evidence of change in practice for induction drugs (increased use of propofol) than neuromuscular blocking drugs (suxamethonium remains the most popular). There was evidence of improvement in practice, with increased monitoring and reversal of neuromuscular blockade (although this remains suboptimal). Despite a high risk of difficult intubation in this population, videolaryngoscopy was rarely used (1.9%)

Role of ambient temperature in modulation of behavior of vanadium dioxide volatile memristors and oscillators for neuromorphic applications

Volatile memristors are versatile devices whose operating mechanism is based on an abrupt and volatile change of resistivity. This switching between high and low resistance states is at the base of cutting edge technological implementations such as neural/synaptic devices or random number generators. A detailed understanding of this operating mechanisms is essential prerequisite to exploit the full potentiality of volatile memristors. In this respect, multi-physics device simulations provide a powerful tool to single out material properties and device features that are the keys to achieve desired behaviors. In this paper, we perform 3D electrothermal simulations of volatile memristors based on vanadium dioxide (VO2) to accurately investigate the interplay among Joule effect, heat dissipation and the external temperature T over their resistive switching mechanism. In particular, we extract from our simulations a simplified model for the effect of T over the negative differential resistance (NDR) region of such devices. The NDR of VO2 devices is pivotal for building VO2 oscillators, which have been recently shown to be essential elements of oscillatory neural networks (ONNs). ONNs are innovative neuromorphic circuits that harness oscillators’ phases to compute. Our simulations quantify the impact of T over figures of merit of VO2 oscillator, such as frequency, voltage amplitude and average power per cycle. Our findings shed light over the interlinked thermal and electrical behavior of VO2 volatile memristors and oscillators, and provide a roadmap for the development of ONN technology

Multiscale approaches to high efficiency photovoltaics

While renewable energies are achieving parity around the globe, efforts to reach higher solar cell efficiencies becomes ever more difficult as they approach the limiting efficiency. The so-called third generation concepts attempt to break this limit through a combination of novel physical processes and new materials and concepts in organic and inorganic systems. Some examples of semi-empirical modelling in the field are reviewed, in particular for multispectral solar cells on silicon (French ANR project MultiSolSi). Their achievements are outlined, and the limits of these approaches shown. This introduces the main topic of this contribution, which is the use of multiscale experimental and theoretical techniques to go beyond the semi-empirical understanding of these systems. This approach has already led to great advances at modelling which have led to modelling software, which is widely known. Yet, a survey of the topic reveals a fragmentation of efforts across disciplines, firstly, such as organic and inorganic fields, but also between the high efficiency concepts such as hot carrier cells and intermediate band concepts. We show how this obstacle to the resolution of practical research obstacles may be lifted by inter-disciplinary cooperation across length scales, and across experimental and theoretical fields, and finally across materials systems. We present a European COST Action “MultiscaleSolar” kicking off in early 2015, which brings together experimental and theoretical partners in order to develop multiscale research in organic and inorganic materials. The goal of this defragmentation and interdisciplinary collaboration is to develop understanding across length scales, which will enable the full potential of third generation concepts to be evaluated in practise, for societal and industrial applications