149 research outputs found
Decay of Hypernuclei
We present a nonrelativistic transition potential for the weak
strangeness-changing reaction . The potential is based on a
one meson exchange model (OME), where, in addition to the long-ranged pion, the
exchange of the pseudoscalar , as well as the vector mesons is considered. Results obtained for different hypernuclear decay
observables are compared to the available experimental data.Comment: 8 pages. Invited talk given at the KEK-Tanashi International
Symposium on Physics of Hadrons and Nuclei. Tokyo, Japan, December 14-17,
1998. In honor of Prof. K. Yazaki. Submitted to Nucl. Phys. A. LateX file
(uses espcrc1.sty
Spin observables in the reaction
The T matrix of the LambdaN-> NN reaction, which is a strangeness changing
weak process, is derived. The explicit formulas of the spin observables are
given for s-wave p-Lambda final states which kinematically corresponds to
inverse reaction of the weak nonmesonic decay of Lambda hypernuclei. One can
study interferences between amplitudes of parity- conserving and violating,
spin- singlet and triplet and isospin- singlet and triplet. Most of them are
not available in the study of the nonmesonic decay. They clarify structure of
the reaction and constrain strongly theoretical models for weak hyperon nucleon
interaction.Comment: 7pages,ReVTeX,no figure
Final State Interactions in Hypernuclear Decay
We present an update of the One-Meson-Exchange (OME) results for the weak
decay of s- and p-shell hypernuclei (Ref. Phys. Rev. C {\bf 56}, 339 (1997)),
paying special attention to the role played by final state interactions between
the emitted nucleons. The present study also corrects for a mistake in the
inclusion of the and exchange mechanisms, which substantially
increases the ratio of neutron-induced to proton-induced transitions,
. With the most up-to-date model ingredients, we find that
the OME approach is able to describe very satisfactorily most of the measured
observables, including the ratio .Comment: 20 pages, 2 eps figure
Polarization-Correlated Photon Pairs from a Single Quantum Dot
Polarization correlation in a linear basis, but not entanglement, is observed
between the biexciton and single-exciton photons emitted by a single InAs
quantum dot in a two-photon cascade. The results are well described
quantitatively by a probabilistic model that includes two decay paths for a
biexciton through a non-degenerate pair of one-exciton states, with the
polarization of the emitted photons depending on the decay path. The results
show that spin non-degeneracy due to quantum-dot asymmetry is a significant
obstacle to the realization of an entangled-photon generation device.Comment: 4 pages, 4 figures, revised discussio
Linear and Second-order Optical Response of the III-V Mono-layer Superlattices
We report the first fully self-consistent calculations of the nonlinear
optical properties of superlattices. The materials investigated are mono-layer
superlattices with GaP grown on the the top of InP, AlP and GaAs (110)
substrates. We use the full-potential linearized augmented plane wave method
within the generalized gradient approximation to obtain the frequency dependent
dielectric tensor and the second-harmonic-generation susceptibility. The effect
of lattice relaxations on the linear optical properties are studied. Our
calculations show that the major anisotropy in the optical properties is the
result of strain in GaP. This anisotropy is maximum for the superlattice with
maximum lattice mismatch between the constituent materials. In order to
differentiate the superlattice features from the bulk-like transitions an
improvement over the existing effective medium model is proposed. The
superlattice features are found to be more pronounced for the second-order than
the linear optical response indicating the need for full supercell calculations
in determining the correct second-order response.Comment: 9 pages, 4 figures, submitted to Phy. Rev.
Tight-binding study of the influence of the strain on the electronic properties of InAs/GaAs quantum dots
We present an atomistic investigation of the influence of strain on the
electronic properties of quantum dots (QD's) within the empirical tight-binding (ETB) model with interactions up to 2nd nearest neighbors
and spin-orbit coupling. Results for the model system of capped pyramid-shaped
InAs QD's in GaAs, with supercells containing atoms are presented and
compared with previous empirical pseudopotential results. The good agreement
shows that ETB is a reliable alternative for an atomistic treatment. The strain
is incorporated through the atomistic valence force field model. The ETB
treatment allows for the effects of bond length and bond angle deviations from
the ideal InAs and GaAs zincblende structure to be selectively removed from the
electronic-structure calculation, giving quantitative information on the
importance of strain effects on the bound state energies and on the physical
origin of the spatial elongation of the wave functions. Effects of dot-dot
coupling have also been examined to determine the relative weight of both
strain field and wave function overlap.Comment: 22 pages, 7 figures, submitted to Phys. Rev. B (in press) In the
latest version, added Figs. 3 and 4, modified Fig. 5, Tables I and II,.and
added new reference
Optical anisotropy in vertically coupled quantum dots
We have studied the polarization of surface and edge-emitted photoluminescence (PL) from structures with vertically coupled In0.5Ga0.5As/GaAs quantum dots (QD’s) grown by molecular beam epitaxy. The PL polarization is found to be strongly dependent on the number of stacked layers. While single-layer and 3-layer structures show only a weak TE polarization, it is enhanced for 10-layer stacks. The 20-layer stacks additionally show a low-energy side-band of high TE polarization, which is attributed to laterally coupled QD’s forming after the growth of many layers by lateral coalescence of QD’s in the upper layers. While in the single, 3- and 10-layer stacks, both TE polarized PL components are stronger than the TM component, the [110] TE component is weaker than the TM component in the 20-layer stack. This polarization reversal is attributed to an increasing vertical coupling with increasing layer number due to increasing dot size
Synthesis and optical properties of II-O-VI highly mismatched alloys
We have synthesized ternary and quaternary diluted II-VI oxides using the combination of O ion implantation and pulsed laser melting. CdO{sub x}Te{sub 1-x} thin films with x up to 0.015, and the energy gap reduced by 150 meV were formed by O{sup +}-implantation in CdTe followed by pulsed laser melting. Quaternary Cd{sub 0.6}Mn{sub 0.4}O{sub x}Te{sub 1-x} and Zn{sub 0.88}Mn{sub 0.12}O{sub x}Te{sub 1-x} with mole fraction of incorporated O as high as 0.03 were also formed. The enhanced O incorporation in Mn-containing alloys is believed to be due to the formation of relatively strong Mn-O bonds. Optical transitions associated with the lower (E{sub -}) and upper (E{sub +}) conduction subbands resulting from the anticrossing interaction between the localized O states and the extended conduction states of the host are clearly observed in these quaternary diluted II-VI oxides. These alloys fulfill the criteria for a multiband semiconductor that has been proposed as a material for making high efficiency, single-junction solar cells
Transmission electron microscopy study of InxGa1-xAs quantum dots on a GaAs(001) substrate
A transmission electron microscopy (TEM) investigation of the morphology of InxGa1-xAs quantum dots grown on a GaAs(001) substrate has been carried out. The size and the shape of the quantum dots have been determined using bright-field images of cross-section TEM specimens and [001] on-zone bright-field images with imaging simulation from plan-view TEM specimens. The results suggest that the coherent quantum dots are lens shaped with base diameters of 25-40 nm and aspect ratios of height to diameter of 1:6-1:4. [S0163-1829(99)00920-0]
Short Interspersed Element (SINE) Depletion and Long Interspersed Element (LINE) Abundance Are Not Features Universally Required for Imprinting
Genomic imprinting is a form of gene dosage regulation in which a gene is expressed from only one of the alleles, in a manner dependent on the parent of origin. The mechanisms governing imprinted gene expression have been investigated in detail and have greatly contributed to our understanding of genome regulation in general. Both DNA sequence features, such as CpG islands, and epigenetic features, such as DNA methylation and non-coding RNAs, play important roles in achieving imprinted expression. However, the relative importance of these factors varies depending on the locus in question. Defining the minimal features that are absolutely required for imprinting would help us to understand how imprinting has evolved mechanistically. Imprinted retrogenes are a subset of imprinted loci that are relatively simple in their genomic organisation, being distinct from large imprinting clusters, and have the potential to be used as tools to address this question. Here, we compare the repeat element content of imprinted retrogene loci with non-imprinted controls that have a similar locus organisation. We observe no significant differences that are conserved between mouse and human, suggesting that the paucity of SINEs and relative abundance of LINEs at imprinted loci reported by others is not a sequence feature universally required for imprinting
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