96 research outputs found
Transport, Growth Mechanisms, and Material Quality in GaN Epitaxial Lateral Overgrowth
Growth kinetics, mechanisms, and material quality in GaN epitaxial lateral over-growth (ELO) were examined using a single mask of systematically varied patterns. A 2-D gas phase reaction/diffusion model describes how transport of the Ga precursor to the growth surface enhances the lateral rate in the early stages of growth. In agreement with SEM studies of truncated growth runs, the model also predicts the dramatic decrease in the lateral rate that occurs as GaN over-growth reduces the exposed area of the mask. At the point of convergence, a step-flow coalescence mechanism is observed to fill in the area between lateral growth-fronts. This alternative growth mode in which a secondary growth of GaN is nucleated along a single convergence line, may be responsible for producing smooth films observed to have uniform cathodoluminescence (CL) when using 1{micro}m nucleation zones. Although emission is comprised of both UV ({approximately}365nm) and yellow ({approximately}550nm) components, the spectra suggest these films have reduced concentrations of threading dislocations normally associated with non-radiative recombination centers and defects known to accompany growth-front convergence lines
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Ionic Current Mapping Techniques and Applications to Aluminum-Copper Corrosion
Measurements have been made of the aluminum/metal galvanic couple. A wide range of geometries were investigated varying the areas of anodic and cathodic surfaces and employing specially designed galvanic cells with crevices. In situ ionic current density mapping was used to monitor galvanic corrosion and currents flowing between separated metals was measured
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Generation of Chloride Active Defects at the Aluminum Oxide Surface for the Study of Localized Corrosion Initiation
The generation of surface defects on electron cyclotron resonance (ECR) plasma derived aluminum oxide films has been studied. We find that Cl active O vacancies can be generated using electron and ion irradiation yielding surface concentrations of 3 xl 013 to 1X1014 sites"cm-2. These values correspond to surface defect concentrations of 3 to 10% when compared to ordered, crystalline u-alumina. The vacancies appear to be responsible for increased surface O concentrations when immersed in water. Anodic polarization of irradiated films yields a decrease in the stable pitting potential which correlates with electron dose
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Transport, Growth Mechanisms, and Material Quality in GaN Epitaxial Lateral Overgrowth
Growth kinetics, mechanisms, and material quality in GaN epitaxial lateral over-growth (ELO) were examined using a single mask of systematically varied patterns. A 2-D gas phase reaction/diffusion model describes how transport of the Ga precursor to the growth surface enhances the lateral rate in the early stages of growth. In agreement with SEM studies of truncated growth runs, the model also predicts the dramatic decrease in the lateral rate that occurs as GaN over-growth reduces the exposed area of the mask. At the point of convergence, a step-flow coalescence mechanism is observed to fill in the area between lateral growth-fronts. This alternative growth mode in which a secondary growth of GaN is nucleated along a single convergence line, may be responsible for producing smooth films observed to have uniform cathodoluminescence (CL) when using 1{micro}m nucleation zones. Although emission is comprised of both UV ({approximately}365nm) and yellow ({approximately}550nm) components, the spectra suggest these films have reduced concentrations of threading dislocations normally associated with non-radiative recombination centers and defects known to accompany growth-front convergence lines
Measurements of neutrino oscillation in appearance and disappearance channels by the T2K experiment with 6.6 x 10(20) protons on target
111 pages, 45 figures, submitted to Physical Review D. Minor revisions to text following referee comments111 pages, 45 figures, submitted to Physical Review D. Minor revisions to text following referee comments111 pages, 45 figures, submitted to Physical Review D. Minor revisions to text following referee commentsWe thank the J-PARC staff for superb accelerator performance and the CERN NA61/SHINE Collaboration for providing valuable particle production data. We acknowledge the support of MEXT, Japan; NSERC, NRC, and CFI, Canada; CEA and CNRS/IN2P3, France; DFG, Germany; INFN, Italy; National Science Centre (NCN), Poland; RSF, RFBR and MES, Russia; MINECO and ERDF funds, Spain; SNSF and SER, Switzerland; STFC, UK; and the U. S. Deparment of Energy, USA. We also thank CERN for the UA1/NOMAD magnet, DESY for the HERA-B magnet mover system, NII for SINET4, the WestGrid and SciNet consortia in Compute Canada, GridPP, UK, and the Emerald High Performance Computing facility in the Centre for Innovation, UK. In addition, participation of individual researchers and institutions has been further supported by funds from ERC (FP7), EU; JSPS, Japan; Royal Society, UK; and DOE Early Career program, USA
Search for short baseline nu(e) disappearance with the T2K near detector
8 pages, 6 figures, submitted to PRD rapid communication8 pages, 6 figures, submitted to PRD rapid communicationWe thank the J-PARC staff for superb accelerator performance and the CERN NA61 collaboration for providing valuable particle production data. We acknowledge the support of MEXT, Japan; NSERC, NRC and CFI, Canada; Commissariat `a l’Energie Atomique and Centre National de la Recherche Scientifique–Institut National de Physique Nucle´aire et de Physique des Particules, France; DFG, Germany; INFN, Italy; National Science Centre (NCN), Poland; Russian Science Foundation, RFBR and Ministry of Education and Science, Russia; MINECO and European Regional Development Fund, Spain; Swiss National Science Foundation and State Secretariat for Education, Research and Innovation, Switzerland; STFC, UK; and DOE, USA. We also thank CERN for the UA1/NOMAD magnet, DESY for the HERA-B magnet mover system, NII for SINET4, the WestGrid and SciNet consortia in Compute Canada, GridPP, UK. In addition participation of individual researchers and institutions has been further supported by funds from ERC (FP7), EU; JSPS, Japan; Royal Society, UK; DOE Early Career program, USA
Measurement of the electron neutrino charged-current interaction rate on water with the T2K ND280 pi(0) detector
10 pages, 6 figures, Submitted to PRDhttp://journals.aps.org/prd/abstract/10.1103/PhysRevD.91.112010© 2015 American Physical Society11 pages, 6 figures, as accepted to PRD11 pages, 6 figures, as accepted to PRD11 pages, 6 figures, as accepted to PR
Measurement of and charged current inclusive cross sections and their ratio with the T2K off-axis near detector
We report a measurement of cross section and the first measurements of the cross section
and their ratio
at (anti-)neutrino energies below 1.5
GeV. We determine the single momentum bin cross section measurements, averaged
over the T2K -flux, for the detector target material (mainly
Carbon, Oxygen, Hydrogen and Copper) with phase space restricted laboratory
frame kinematics of 500 MeV/c. The
results are and $\sigma(\nu)=\left( 2.41\
\pm0.022{\rm{(stat.)}}\pm0.231{\rm (syst.)}\ \right)\times10^{-39}^{2}R\left(\frac{\sigma(\bar{\nu})}{\sigma(\nu)}\right)=
0.373\pm0.012{\rm (stat.)}\pm0.015{\rm (syst.)}$.Comment: 18 pages, 8 figure
Measurement of ¯νμ and νμ charged current inclusive cross sections and their ratio with the T2K off-axis near detector
We report a measurement of cross section σ(νμ+nucleus→μ−+X) and the first measurements of the cross section σ(¯νμ+nucleus→μ++X) and their ratio R(σ(¯ν)σ(ν)) at (anti) neutrino energies below 1.5 GeV. We determine the single momentum bin cross section measurements, averaged over the T2K ¯ν/ν-flux, for the detector target material (mainly carbon, oxygen, hydrogen and copper) with phase space restricted laboratory frame kinematics of θμ500 MeV/c. The results are σ(¯ν)=(0.900±0.029(stat)±0.088(syst))×10−39 and σ(ν)=(2.41±0.022(stat)±0.231(syst))×10−39 in units of cm2/nucleon and R(σ(¯ν)σ(ν))=0.373±0.012(stat)±0.015(syst)
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