Effective altruism and the dark side of entrepreneurship

Purpose: Effective Altruism (EA) has become one of the most prominent socio-philosophical movements of recent years. EA is also facing intense scrutiny due to the business practices of some of its most prominent adherents. On the other hand, the dark triad traits of Machiavellianism, narcissism and psychopathy have been getting increasing attention in entrepreneurship research. There is growing evidence that these traits can motivate entrepreneurial intention. We therefore sought to investigate if there was a connection between the entrepreneurship discourse in EA and traits corresponding to dark triad behavior. Design/methodology/approach: Using a discursive analytic method, we investigated the discursive threads on entrepreneurship in EA over a 10-year period. Findings: While we believe EA brings a much-needed perspective to the overall debate on doing good, we found ample evidence that it might have promoted the sort of dark triad behavior which some evidence suggests can lead to financial success, but can equally lead to the type of morally bankrupt, unethical and even illegal practices of some entrepreneurs. We also discovered a somewhat temporal dimension in EA’s discourse on entrepreneurship, beginning with discourse encouraging some risk taking and entrepreneurship, before moving on to discourses on the benefits of having a smart and illicit character, and ending with a focus on aggressive risk taking. Originality: The findings contribute to the still nascent debate on dark personality traits in entrepreneurship, and enriches the theoretical advancement of the field. However, our research differs from prior studies which were almost exclusively focused on the firm. Instead, we examine this phenomenon within a highly influential belief system/philosophical movement. Copyright © 2023 Olumekor, Mohiuddin and Su.Ministry of Education and Science of the Russian Federation, Minobrnauka; Ural Federal University, UrFUMO acknowledges funding from the Ministry of Science and Higher Education of the Russian Federation (Ural Federal University project within the Priority-2030 program). Also, the authors gratefully acknowledge the constructive feedback of the reviewers

Local structure study of In_xGa_(1-x)As semiconductor alloys using High Energy Synchrotron X-ray Diffraction

Nearest and higher neighbor distances as well as bond length distributions (static and thermal) of the In_xGa_(1-x)As (0<x<1) semiconductor alloys have been obtained from high real-space resolution atomic pair distribution functions (PDFs). Using this structural information, we modeled the local atomic displacements in In_xGa_(1-x)As alloys. From a supercell model based on the Kirkwood potential, we obtained 3-D As and (In,Ga) ensemble averaged probability distributions. This clearly shows that As atom displacements are highly directional and can be represented as a combination of and displacements. Examination of the Kirkwood model indicates that the standard deviation (sigma) of the static disorder on the (In,Ga) sublattice is around 60% of the value on the As sublattice and the (In,Ga) atomic displacements are much more isotropic than those on the As sublattice. The single crystal diffuse scattering calculated from the Kirkwood model shows that atomic displacements are most strongly correlated along directions.Comment: 10 pages, 12 figure

Probing Mechanical Properties of Graphene with Raman Spectroscopy

The use of Raman scattering techniques to study the mechanical properties of graphene films is reviewed here. The determination of Gruneisen parameters of suspended graphene sheets under uni- and bi-axial strain is discussed and the values are compared to theoretical predictions. The effects of the graphene-substrate interaction on strain and to the temperature evolution of the graphene Raman spectra are discussed. Finally, the relation between mechanical and thermal properties is presented along with the characterization of thermal properties of graphene with Raman spectroscopy.Comment: To appear in the Journal of Materials Scienc

Bilinear amplitude approximation for piecewise-linear oscillators

Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/97069/1/AIAA2012-1793.pd

Water-Gated Charge Doping of Graphene Induced by Mica Substrates

We report on the existence of water-gated charge doping of graphene deposited on atomically flat mica substrates. Molecular films of water in units of ~0.4 nm-thick bilayers were found to be present in regions of the interface of graphene/mica hetero-stacks prepared by micromechanical exfoliation of kish graphite. The spectral variation of the G and 2D bands, as visualized by Raman mapping, shows that mica substrates induce strong p-type doping in graphene, with hole densities of $(9 \pm 2) \times 1012 cm${-2}$. The ultrathin water films, however, effectively block interfacial charge transfer, rendering graphene significantly less hole-doped. Scanning Kelvin probe microscopy independently confirmed a water-gated modulation of the Fermi level by 0.35 eV, in agreement with the optically determined hole density. The manipulation of the electronic properties of graphene demonstrated in this study should serve as a useful tool in realizing future graphene applications.Comment: 15 pages, 4 figures; Nano Letters, accepted (2012

Energy gaps, topological insulator state and zero-field quantum Hall effect in graphene by strain engineering

Among many remarkable qualities of graphene, its electronic properties attract particular interest due to a massless chiral character of charge carriers, which leads to such unusual phenomena as metallic conductivity in the limit of no carriers and the half-integer quantum Hall effect (QHE) observable even at room temperature [1-3]. Because graphene is only one atom thick, it is also amenable to external influences including mechanical deformation. The latter offers a tempting prospect of controlling graphene's properties by strain and, recently, several reports have examined graphene under uniaxial deformation [4-8]. Although the strain can induce additional Raman features [7,8], no significant changes in graphene's band structure have been either observed or expected for realistic strains of approx. 10% [9-11]. Here we show that a designed strain aligned along three main crystallographic directions induces strong gauge fields [12-14] that effectively act as a uniform magnetic field exceeding 10 T. For a finite doping, the quantizing field results in an insulating bulk and a pair of countercirculating edge states, similar to the case of a topological insulator [15-20]. We suggest realistic ways of creating this quantum state and observing the pseudo-magnetic QHE. We also show that strained superlattices can be used to open significant energy gaps in graphene's electronic spectrum

Etching and Narrowing of Graphene from the Edges

Large scale graphene electronics desires lithographic patterning of narrow graphene nanoribbons (GNRs) for device integration. However, conventional lithography can only reliably pattern ~20nm wide GNR arrays limited by lithography resolution, while sub-5nm GNRs are desirable for high on/off ratio field-effect transistors (FETs) at room temperature. Here, we devised a gas phase chemical approach to etch graphene from the edges without damaging its basal plane. The reaction involved high temperature oxidation of graphene in a slightly reducing environment to afford controlled etch rate (\leq ~1nm/min). We fabricated ~20-30nm wide GNR arrays lithographically, and used the gas phase etching chemistry to narrow the ribbons down to <10nm. For the first time, high on/off ratio up to ~10^4 was achieved at room temperature for FETs built with sub-5nm wide GNR semiconductors derived from lithographic patterning and narrowing. Our controlled etching method opens up a chemical way to control the size of various graphene nano-structures beyond the capability of top-down lithography.Comment: 18 pages, 4 figures, to appear in Nature Chemistr

Compression Behavior of Single-layer Graphene

Central to most applications involving monolayer graphene is its mechanical response under various stress states. To date most of the work reported is of theoretical nature and refers to tension and compression loading of model graphene. Most of the experimental work is indeed limited to bending of single flakes in air and the stretching of flakes up to typically ~1% using plastic substrates. Recently we have shown that by employing a cantilever beam we can subject single graphene into various degrees of axial compression. Here we extend this work much further by measuring in detail both stress uptake and compression buckling strain in single flakes of different geometries. In all cases the mechanical response is monitored by simultaneous Raman measurements through the shift of either the G or 2D phonons of graphene. In spite of the infinitely small thickness of the monolayers, the results show that graphene embedded in plastic beams exhibit remarkable compression buckling strains. For large length (l)-to-width (w) ratios (> 0.2) the buckling strain is of the order of -0.5% to -0.6%. However, for l/w <0.2 no failure is observed for strains even higher than -1%. Calculations based on classical Euler analysis show that the buckling strain enhancement provided by the polymer lateral support is more than six orders of magnitude compared to suspended graphene in air

Strain-engineered graphene grown on hexagonal boron nitride by molecular beam epitaxy

Graphene grown by high temperature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuous domains with dimensions of order 20 μm, and exhibits moiré patterns with large periodicities, up to ~30 nm, indicating that the layers are highly strained. Topological defects in the moiré patterns are observed and attributed to the relaxation of graphene islands which nucleate at different sites and subsequently coalesce. In addition, cracks are formed leading to strain relaxation, highly anisotropic strain fields, and abrupt boundaries between regions with different moiré periods. These cracks can also be formed by modification of the layers with a local probe resulting in the contraction and physical displacement of graphene layers. The Raman spectra of regions with a large moiré period reveal split and shifted G and 2D peaks confirming the presence of strain. Our work demonstrates a new approach to the growth of epitaxial graphene and a means of generating and modifying strain in graphene

PEG–Polypeptide Block Copolymers as pH-Responsive Endosome-Solubilizing Drug Nanocarriers

Herein we report the potential of click chemistry-modified polypeptide-based block copolymers for the facile fabrication of pH-sensitive nanoscale drug delivery systems. PEG–polypeptide copolymers with pendant amine chains were synthesized by combining N-carboxyanhydride-based ring-opening polymerization with post-functionalization using azide–alkyne cycloaddition. The synthesized block copolymers contain a polypeptide block with amine-functional side groups and were found to self-assemble into stable polymersomes and disassemble in a pH-responsive manner under a range of biologically relevant conditions. The self-assembly of these block copolymers yields nanometer-scale vesicular structures that are able to encapsulate hydrophilic cytotoxic agents like doxorubicin at physiological pH but that fall apart spontaneously at endosomal pH levels after cellular uptake. When drug-encapsulated copolymer assemblies were delivered systemically, significant levels of tumor accumulation were achieved, with efficacy against the triple-negative breast cancer cell line, MDA-MB-468, and suppression of tumor growth in an in vivo mouse model.Novartis Institutes of Biomedical ResearchNational Institutes of Health (U.S.) (Centers for Cancer Nanotechnology Excellence Grant P30 CA14051)National Institutes of Health (U.S.) (Centers for Cancer Nanotechnology Excellence Grant 5 U54 CA151884-02)National Science Foundation (U.S.). Graduate Research FellowshipNatural Sciences and Engineering Research Council of Canada (Postdoctoral Fellowship