Ultrafast magnetization switching by spin-orbit torques

Spin-orbit torques induced by spin Hall and interfacial effects in heavy metal/ferromagnetic bilayers allow for a switching geometry based on in-plane current injection. Using this geometry, we demonstrate deterministic magnetization reversal by current pulses ranging from 180~ps to ms in Pt/Co/AlOx dots with lateral dimensions of 90~nm. We characterize the switching probability and critical current $I_c$ as function of pulse length, amplitude, and external field. Our data evidence two distinct regimes: a short-time intrinsic regime, where $I_c$ scales linearly with the inverse of the pulse length, and a long-time thermally assisted regime where $I_c$ varies weakly. Both regimes are consistent with magnetization reversal proceeding by nucleation and fast propagation of domains. We find that $I_c$ is a factor 3-4 smaller compared to a single domain model and that the incubation time is negligibly small, which is a hallmark feature of spin-orbit torques

Symmetry and magnitude of spin-orbit torques in ferromagnetic heterostructures

Current-induced spin torques are of great interest to manipulate the orientation of nanomagnets without applying external magnetic fields. They find direct application in non-volatile data storage and logic devices, and provide insight into fundamental processes related to the interdependence between charge and spin transport. Recent demonstrations of magnetization switching induced by in-plane current injection in ferromagnetic heterostructures have drawn attention to a class of spin torques based on orbital-to-spin momentum transfer, which is alternative to pure spin transfer torque (STT) between noncollinear magnetic layers and amenable to more diversified device functions. Due to the limited number of studies, however, there is still no consensus on the symmetry, magnitude, and origin of spin-orbit torques (SOTs). Here we report on the quantitative vector measurement of SOTs in Pt/Co/AlO trilayers using harmonic analysis of the anomalous and planar Hall effects as a function of the applied current and magnetization direction. We provide an all-purpose scheme to measure the amplitude and direction of SOTs for any arbitrary orientation of the magnetization, including corrections due to the interplay of Hall and thermoelectric effects. Based on general space and time inversion symmetry arguments, we show that asymmetric heterostructures allow for two different SOTs having odd and even behavior with respect to magnetization reversal. Our results reveal a scenario that goes beyond established models of the Rashba and spin Hall contributions to SOTs. The even SOT is STT-like but stronger than expected from the spin Hall effect in Pt. The odd SOT is composed of a constant field-like term and an additional component, which is strongly anisotropic and does not correspond to a simple Rashba field.Comment: Supplementary Informations follows Paper in the .pdf fil

Chirality-induced asymmetric magnetic nucleation in Pt/Co/AlOx ultrathin microstructures

The nucleation of reversed magnetic domains in Pt/Co/AlO$_{x}$ microstructures with perpendicular anisotropy was studied experimentally in the presence of an in-plane magnetic field. For large enough in-plane field, nucleation was observed preferentially at an edge of the sample normal to this field. The position at which nucleation takes place was observed to depend in a chiral way on the initial magnetization and applied field directions. An explanation of these results is proposed, based on the existence of a sizable Dzyaloshinskii-Moriya interaction in this sample. Another consequence of this interaction is that the energy of domain walls can become negative for in-plane fields smaller than the effective anisotropy field.Comment: Published version, Physical Review Letters 113, 047203 (2014

Direct Observation of Massless Domain Wall Dynamics in Nanostripes with Perpendicular Magnetic Anisotropy

Domain wall motion induced by nanosecond current pulses in nanostripes with perpendicular magnetic anisotropy (Pt/Co/AlO$_x$) is shown to exhibit negligible inertia. Time-resolved magnetic microscopy during current pulses reveals that the domain walls start moving, with a constant speed, as soon as the current reaches a constant amplitude, and no or little motion takes place after the end of the pulse. The very low 'mass' of these domain walls is attributed to the combination of their narrow width and high damping parameter $\alpha$. Such a small inertia should allow accurate control of domain wall motion, by tuning the duration and amplitude of the current pulses

Fieldlike and antidamping spin-orbit torques in as-grown and annealed Ta/CoFeB/MgO layers

Under the terms of the Creative Commons Attribution License 3.0 (CC-BY).-- et al.We present a comprehensive study of the current-induced spin-orbit torques in perpendicularly magnetized Ta/CoFeB/MgO layers. The samples were annealed in steps up to 300 °C and characterized using x-ray-absorption spectroscopy, transmission electron microscopy, resistivity, and Hall effect measurements. By performing adiabatic harmonic Hall voltage measurements, we show that the transverse (fieldlike) and longitudinal (antidampinglike) spin-orbit torques are composed of constant and magnetization-dependent contributions, both of which vary strongly with annealing. Such variations correlate with changes of the saturation magnetization and magnetic anisotropy and are assigned to chemical and structural modifications of the layers. The relative variation of the constant and anisotropic torque terms as a function of annealing temperature is opposite for the fieldlike and antidamping torques. Measurements of the switching probability using sub-μs current pulses show that the critical current increases with the magnetic anisotropy of the layers, whereas the switching efficiency, measured as the ratio of magnetic anisotropy energy and pulse energy, decreases. The optimal annealing temperature to achieve maximum magnetic anisotropy, saturation magnetization, and switching efficiency is determined to be between 240 and 270°C.This work was supported by the the European Commission under the Seventh Framework Programme (GA 318144, SPOT), the European Research Council (StG 203239 NOMAD), the Ministerio de Economía y Competitividad (MAT2010-15659), and the Swiss Competence Centre for Materials Science and Technology (CCMX).Peer Reviewe

Chiral damping of magnetic domain walls

Structural symmetry breaking in magnetic materials is responsible for a variety of outstanding physical phenomena. Examples range from the existence of multiferroics, to current induced spin orbit torques (SOT) and the formation of topological magnetic structures. In this letter we bring into light a novel effect of the structural inversion asymmetry (SIA): a chiral damping mechanism. This phenomenon is evidenced by measuring the field driven domain wall (DW) motion in perpendicularly magnetized asymmetric Pt/Co/Pt trilayers. The difficulty in evidencing the chiral damping is that the ensuing DW dynamics exhibit identical spatial symmetry to those expected from the Dzyaloshinskii-Moriya interaction (DMI). Despite this fundamental resemblance, the two scenarios are differentiated by their time reversal properties: while DMI is a conservative effect that can be modeled by an effective field, the chiral damping is purely dissipative and has no influence on the equilibrium magnetic texture. When the DW motion is modulated by an in-plane magnetic field, it reveals the structure of the internal fields experienced by the DWs, allowing to distinguish the physical mechanism. The observation of the chiral damping, not only enriches the spectrum of physical phenomena engendered by the SIA, but since it can coexists with DMI it is essential for conceiving DW and skyrmion devices

Fieldlike and antidamping spin-orbit torques in as-grown and annealed Ta/CoFeB/MgO layers

We present a comprehensive study of the current-induced spin-orbit torques in perpendicularly magnetized Ta/CoFeB/MgO layers. The samples were annealed in steps up to 300 degrees C and characterized using x-ray absorption spectroscopy, transmission electron microscopy, resistivity, and Hall effect measurements. By performing adiabatic harmonic Hall voltage measurements, we show that the transverse (field-like) and longitudinal (antidamping-like) spin-orbit torques are composed of constant and magnetization-dependent contributions, both of which vary strongly with annealing. Such variations correlate with changes of the saturation magnetization and magnetic anisotropy and are assigned to chemical and structural modifications of the layers. The relative variation of the constant and anisotropic torque terms as a function of annealing temperature is opposite for the field-like and antidamping torques. Measurements of the switching probability using sub-{\mu}s current pulses show that the critical current increases with the magnetic anisotropy of the layers, whereas the switching efficiency, measured as the ratio of magnetic anisotropy energy and pulse energy, decreases. The optimal annealing temperature to achieve maximum magnetic anisotropy, saturation magnetization, and switching efficiency is determined to be between 240 degrees and 270 degrees C

Room temperature chiral magnetic skyrmion in ultrathin magnetic nanostructures

Magnetic skyrmions are chiral spin structures with a whirling configuration. Their topological properties, nanometer size and the fact that they can be moved by small current densities have opened a new paradigm for the manipulation of magnetisation at the nanoscale. To date, chiral skyrmion structures have been experimentally demonstrated only in bulk materials and in epitaxial ultrathin films and under external magnetic field or at low temperature. Here, we report on the observation of stable skyrmions in sputtered ultrathin Pt/Co/MgO nanostructures, at room temperature and zero applied magnetic field. We use high lateral resolution X-ray magnetic circular dichroism microscopy to image their chiral N\'eel internal structure which we explain as due to the large strength of the Dzyaloshinskii-Moriya interaction as revealed by spin wave spectroscopy measurements. Our results are substantiated by micromagnetic simulations and numerical models, which allow the identification of the physical mechanisms governing the size and stability of the skyrmions.Comment: Submitted version. Extended version to appear in Nature Nanotechnolog

Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection

International audienceModern computing technology is based on writing, storing and retrieving information encoded as magnetic bits. Although the giant magnetoresistance effect has improved the electrical read out of memory elements, magnetic writing remains the object of major research efforts. Despite several reports of methods to reverse the polarity of nanosized magnets by means of local electric fields and currents, the simple reversal of a high-coercivity, single-layer ferromagnet remains a challenge. Materials with large coercivity and perpendicular magnetic anisotropy represent the mainstay of data storage media, owing to their ability to retain a stable magnetization state over long periods of time and their amenability to miniaturization. However, the same anisotropy properties that make a material attractive for storage also make it hard to write to. Here we demonstrate switching of a perpendicularly magnetized cobalt dot driven by in-plane current injection at room temperature. Our device is composed of a thin cobalt layer with strong perpendicular anisotropy and Rashba interaction induced by asymmetric platinum and AlOx interface layers. The effective switching field is orthogonal to the direction of the magnetization and to the Rashba field. The symmetry of the switching field is consistent with the spin accumulation induced by the Rashba interaction and the spin-dependent mobility observed in non-magnetic semiconductors as well as with the torque induced by the spin Hall effect in the platinum layer. Our measurements indicate that the switching efficiency increases with the magnetic anisotropy of the cobalt layer and the oxidation of the aluminium layer, which is uppermost, suggesting that the Rashba interaction has a key role in the reversal mechanism. To prove the potential of in-plane current switching for spintronic applications, we construct a reprogrammable magnetic switch that can be integrated into non-volatile memory and logic architectures. This device is simple, scalable and compatible with present-day magnetic recording technolog