Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol

We explore different resistance states of La 0.325Pr 0.300 Ca 0.375 MnO 3- Ti interfaces as prototypes of non-volatile memory devices at room temperature. In addition to high and low resistance states accessible through bipolar pulsing with one pulse, higher resistance states can be obtained by repeatedly pulsing with a single polarity. The accumulative action of successive pulsing drives the resistance towards saturation, the time constant being a strong function of the pulsing amplitude. The experiments reveal that the pulsing amplitude and the number of applied pulses necessary to reach a target high resistance value appear to be in an exponential relationship, with a rate that results independent of the resistance value. Model simulations confirm these results and provide the oxygen vacancy profiles associated to the high resistance states obtained in the experiments. © 2012 American Institute of Physics.Fil:Rozenberg, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina.Fil:Rubi, D. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina.Fil:Levy, P. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina

Proton irradiation effects on metal-YBCO interfaces

10 MeV proton-irradiation effects on a YBCO-based test structure were analyzed by measuring its current-voltage (IV) characteristics for different cumulated fluences. For fluences of up to ~ 80⋅109 p/cm2 no changes in the electrical behavior of the device were observed, while for a fluence of ~ 300⋅109 p/cm2 it becomes less conducting. A detailed analysis of the room temperature IV characteristics based on the γ power exponent parameter [γ = dLn(I)/dLn(V)] allowed us to reveal the main conduction mechanisms as well as to establish the equivalent circuit model of the device. The changes produced in the electrical behavior, in accordance with Monte Carlo TRIM simulations, suggest that the main effect induced by protons is the displacement of oxygen atoms within the YBCO lattice, particularly from oxygen-rich to oxygen-poor areas, where they become trapped.</p

Modeling of the major and minor I-V loops in La0.3Ca 0.7 MnO 3 films using asymmetric logistic hysterons

International audienceThe conduction characteristics of La 1/3 Ca 2/3 MnO 3 (LCMO) films grown by pulsed laser deposition were investigated. The devices exhibit bipolar resistive switching effect with intermediate conduction states achievable by the application of positive and negative voltage ramps. The I-V curves are modeled using a nonlinear memristive approach based on the double-diode equation and the solution of the generalized logistic differential equation. © 2015 IEEE

Modeling of the major and minor I-V loops in La0.3Ca 0.7 MnO 3 films using asymmetric logistic hysterons

International audienceThe conduction characteristics of La 1/3 Ca 2/3 MnO 3 (LCMO) films grown by pulsed laser deposition were investigated. The devices exhibit bipolar resistive switching effect with intermediate conduction states achievable by the application of positive and negative voltage ramps. The I-V curves are modeled using a nonlinear memristive approach based on the double-diode equation and the solution of the generalized logistic differential equation. © 2015 IEEE