3,990 research outputs found

    Opinion formation models on a gradient

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    Statistical physicists have become interested in models of collective social behavior such as opinion formation, where individuals change their inherently preferred opinion if their friends disagree. Real preferences often depend on regional cultural differences, which we model here as a spatial gradient gg in the initial opinion. The gradient does not only add reality to the model. It can also reveal that opinion clusters in two dimensions are typically in the standard (i.e.\ independent) percolation universality class, thus settling a recent controversy about a non-consensus model. However, using analytical and numerical tools, we also present a model where the width of the transition between opinions scales g1/4\propto g^{-1/4}, not g4/7\propto g^{-4/7} as in independent percolation, and the cluster size distribution is consistent with first-order percolation.Comment: 12 pages, 8 figures, version accepted by PLoS ONE, online supplement added as appendi

    Topological Hall effect in thin films of Mn1.5_{1.5}PtSn

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    Spin chirality in metallic materials with non-coplanar magnetic order can give rise to a Berry phase induced topological Hall effect. Here, we report the observation of a large topological Hall effect in high-quality films of Mn1.5_{1.5}PtSn that were grown by means of magnetron sputtering on MgO(001). The topological Hall resistivity is present up to μ0H4 \mu_{0}H \approx 4~T below the spin reorientation transition temperature, Ts=185T_{s}=185~K. We find, that the maximum topological Hall resistivity is of comparable magnitude as the anomalous Hall resistivity. Owing to the size, the topological Hall effect is directly evident prior to the customarily performed subtraction of magnetometry data. Further, we underline the robustness of the topological Hall effect in Mn\textsubscript{2-x}PtSn by extracting the effect for multiple stoichiometries (x~=~0.5, 0.25, 0.1) and film thicknesses (t = 104, 52, 35~nm) with maximum topological Hall resistivities between 0.76 μΩ0.76~\mu\Omegacm and 1.55 μΩ1.55~\mu\Omegacm at 150~K.Comment: 6 pages, 5 figure

    Are strategies teachable? Developing strategies in Foreign Language Education for more autonomy

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    There is an open discussion about strategies in foreign language education and more specifically whether or not they can be taught and be included in Foreign Language Instruction. The purpose of this paper is to trace teachable strategies among commonly used ones and reinforce their use in order to gain autonomy in foreign language use.Accordingly, communication is divided in three categories:a) oral face-to-face interactionb) creative production of written speech andc) synchronous text-based computer mediated communication.These are the results of three separate researches and the effort of this paper is to combine them and provide a synthesis of strategies used in the 3 domains mentioned above

    Spin-voltage-driven efficient terahertz spin currents from the magnetic Weyl semimetals Co<sub>2</sub>MnGa and Co<sub>2</sub>MnAl

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    Magnetic Weyl semimetals are an emerging material class that combines magnetic order and a topologically non-trivial band structure. Here, we study ultrafast optically driven spin injection from thin films of the magnetic Weyl semimetals Co2MnGa and Co2MnAl into an adjacent Pt layer by means of terahertz emission spectroscopy. We find that (i) Co2MnGa and Co2MnAl are efficient terahertz spin-current generators reaching efficiencies of typical 3d-transition-metal ferromagnets such as Fe. (ii) The relaxation of the spin current provides an estimate of the electron-spin relaxation time of Co2MnGa (165 fs) and Co2MnAl (102 fs), which is comparable to Fe (92 fs). Both observations are consistent with a simple analytical model and highlight the large potential of magnetic Weyl semimetals as spin-current sources in terahertz spintronic devices. Finally, our results provide a strategy to identify magnetic materials that provide maximum spin current amplitudes for a given deposited optical energy density

    Quantum Oscillations in Ferromagnetic (Sb, V)<sub>2</sub>Te<sub>3</sub> Topological Insulator Thin Films

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    An effective way of manipulating 2D surface states in magnetic topological insulators may open a new route for quantum technologies based on the quantum anomalous Hall effect. The doping-dependent evolution of the electronic band structure in the topological insulator Sb2-xVxTe3 (0 <= x <= 0.102) thin films is studied by means of electrical transport. Sb2-xVxTe3 thin films were prepared by molecular beam epitaxy, and Shubnikov-de Hass (SdH) oscillations are observed in both the longitudinal and transverse transport channels. Doping with the 3d element, vanadium, induces long-range ferromagnetic order with enhanced SdH oscillation amplitudes. The doping effect is systematically studied in various films depending on thickness and bottom gate voltage. The angle-dependence of the SdH oscillations reveals their 2D nature, linking them to topological surface states as their origin. Furthermore, it is shown that vanadium doping can efficiently modify the band structure. The tunability by doping and the coexistence of the surface states with ferromagnetism render Sb2-xVxTe3 thin films a promising platform for energy band engineering. In this way, topological quantum states may be manipulated to crossover from quantum Hall effect to quantum anomalous Hall effect, which opens an alternative route for the design of quantum electronics and spintronics

    All Electrical Access to Topological Transport Features in Mn1.8_{1.8}PtSn Films

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    The presence of non-trivial magnetic topology can give rise to non-vanishing scalar spin chirality and consequently a topological Hall or Nernst effect. In turn, topological transport signals can serve as indicators for topological spin structures. This is particularly important in thin films or nanopatterned materials where the spin structure is not readily accessible. Conventionally, the topological response is determined by combining magnetotransport data with an independent magnetometry experiment. This approach is prone to introduce measurement artifacts. In this study, we report the observation of large topological Hall and Nernst effects in micropatterned thin films of Mn1.8_{1.8}PtSn below the spin reorientation temperature TSR190T_\mathrm{SR} \approx 190K. The magnitude of the topological Hall effect ρxyT=8\rho_\mathrm{xy}^\mathrm{T} = 8 nΩ\Omegam is close to the value reported in bulk Mn2_2PtSn, and the topological Nernst effect SxyT=115S_\mathrm{xy}^\mathrm{T} = 115 nV K1^{-1} measured in the same microstructure has a similar magnitude as reported for bulk MnGe (SxyT150S_\mathrm{xy}^\mathrm{T} \sim 150 nV K1^{-1}), the only other material where a topological Nernst was reported. We use our data as a model system to introduce a topological quantity, which allows to detect the presence of topological transport effects without the need for independent magnetometry data. Our approach thus enables the study of topological transport also in nano-patterned materials without detrimental magnetization related limitations.Comment: 8 pages, 3 figure
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