Origin of Sn(II) oxidation in tin halide perovskites

Tin-halide perovskites have great potential as photovoltaic materials, but their performance is hampered by undesirable oxidation of Sn(ii) to Sn(iv). NMR proves DMSO to be a main cause of oxidation

Fluoride Chemistry in Tin Halide Perovskites

Tin is the frontrunner for substituting toxic lead in perovskite solar cells. However, tin suffers the detrimental oxidation of SnII to SnIV. Most of reported strategies employ SnF2 in the perovskite precursor solution to prevent SnIV formation. Nevertheless, the working mechanism of this additive remains debated. To further elucidate it, we investigate the fluoride chemistry in tin halide perovskites by complementary analytical tools. NMR analysis of the precursor solution discloses a strong preferential affinity of fluoride anions for SnIV over SnII, selectively complexing it as SnF4. Hard X-ray photoelectron spectroscopy on films shows the lower tendency of SnF4 than SnI4 to get included in the perovskite structure, hence preventing the inclusion of SnIV in the film. Finally, small-angle X-ray scattering reveals the strong influence of fluoride on the colloidal chemistry of precursor dispersions, directly affecting perovskite crystallization

Halogen Bonded Hole Transport Material Suppresses Charge Recombination and Enhances Stability of Perovskite Solar Cells

Interfaces play a crucial role in determining perovskite solar cells, PSCs performance and stability. It is therefore of great importance to constantly work toward improving their design. This study shows the advantages of using a hole transport material HTM that can anchor to the perovskite surface through halogen bonding XB . A halo functional HTM PFI is compared to a reference HTM PF , identical in optoelectronic properties and chemical structure but lacking the ability to form XB. The interaction between PFI and perovskite is supported by simulations and experiments. XB allows the HTM to create an ordered and homogenous layer on the perovskite surface, thus improving the perovskite HTM interface and its energy level alignment. Thanks to the compact and ordered interface, PFI displays increased resistance to solvent exposure compared to its not interacting counterpart. Moreover, PFI devices show suppressed nonradiative recombination and reduced hysteresis, with a Voc enhancement of bigger equal as 20 mV and a remarkable stability, retaining more than 90 efficiency after 550 h of continuous maximum power point tracking. This work highlights the potential that XB can bring to the context of PSCs, paving the way for a new halo functional design strategy for charge transport layers, which tackles the challenges of charge transport and interface improvement simultaneousl

Fluoridchemie in Zinn‐Halogenid‐Perowskiten

Zinn ist der Top-Favorit für den Ersatz von giftigem Blei in Perowskit-Solarzellen. Allerdings kommt es dabei verstärkt zu der unerwünschten Oxidation von SnII zu SnIV. Die herkömmlichen Verfahren verwenden SnF2 in der Perowskit-Vorläuferlösung, um die Bildung von SnIV zu verhindern. Dennoch bleibt der Wirkmechanismus des Additivs unklar. Um diesen eingehender zu erläutern, untersuchen wir die Fluoridchemie in Zinn-Halogenid-Perowskiten mit einander ergänzenden Analyseverfahren. NMR-Spektroskopie der Vorläuferlösung offenbart eine stark bevorzugte Affinität der Fluoridanionen für SnIV gegenüber SnII, wodurch dieses selektiv als SnF4 komplexiert wird. Harte Röntgenphotoelektronenspektroskopie an Dünnschichten zeigt die geringere Bereitschaft von SnF4 gegenüber SnI4, in die Perowskit-Struktur eingebaut zu werden und verhindert somit den Einschluss von SnIV in der Dünnschicht. Abschließend offenbart Röntgen-Kleinwinkelstreuung den starken Einfluss vom Fluorid auf die kolloidale Chemie der Vorläuferlösungen, der sich direkt auf die darauffolgende Kristallisation auswirkt.European Research Council (ERC)Peer Reviewe

Ion Migration‐Induced Amorphization and Phase Segregation as a Degradation Mechanism in Planar Perovskite Solar Cells

The operation of halide perovskite optoelectronic devices, including solar cells and LEDs, is strongly influenced by the mobility of ions comprising the crystal structure. This peculiarity is particularly true when considering the long‐term stability of devices. A detailed understanding of the ion migration‐driven degradation pathways is critical to design effective stabilization strategies. Nonetheless, despite substantial research in this first decade of perovskite photovoltaics, the long‐term effects of ion migration remain elusive due to the complex chemistry of lead halide perovskites. By linking materials chemistry to device optoelectronics, this study highlights that electrical bias‐induced perovskite amorphization and phase segregation is a crucial degradation mechanism in planar mixed halide perovskite solar cells. Depending on the biasing potential and the injected charge, halide segregation occurs, forming crystalline iodide‐rich domains, which govern light emission and participate in light absorption and photocurrent generation. Additionally, the loss of crystallinity limits charge collection efficiency and eventually degrades the device performance

20.8% Slot-Die Coated MAPbI3 Perovskite Solar Cells by Optimal DMSO-Content and Age of 2-ME Based Precursor Inks

Solar cells incorporating metal-halide perovskite (MHP) semiconductors are continuing to break efficiency records for solution-processed solar cell devices. Scaling MHP-based devices to larger area prototypes requires the development and optimization of scalable process technology and ink formulations that enable reproducible coating results. It is demonstrated that the power conversion efficiency (PCE) of small-area methylammonium lead iodide (MAPbI3) devices, slot-die coated from a 2-methoxy-ethanol (2-ME) based ink with dimethyl-sulfoxide (DMSO) used as an additive depends on the amount of DMSO and age of the ink formulation. When adding 12 mol% of DMSO, small-area devices of high performance (20.8%) are achieved. The effect of DMSO content and age on the thin film morphology and device performance through in situ X-ray diffraction and small-angle X-ray scattering experiments is rationalized. Adding a limited amount of DMSO prevents the formation of a crystalline intermediate phase related to MAPbI3 and 2-ME (MAPbI3-2-ME) and induces the formation of the MAPbI3 perovskite phase. Higher DMSO content leads to the precipitation of the (DMSO)2MA2Pb3I8 intermediate phase that negatively affects the thin-film morphology. These results demonstrate that rational insights into the ink composition and process control are critical to enable reproducible large-scale manufacturing of MHP-based devices for commercial applications