190 research outputs found
Universal quantum control of two-electron spin quantum bits using dynamic nuclear polarization
One fundamental requirement for quantum computation is to perform universal
manipulations of quantum bits at rates much faster than the qubit's rate of
decoherence. Recently, fast gate operations have been demonstrated in logical
spin qubits composed of two electron spins where the rapid exchange of the two
electrons permits electrically controllable rotations around one axis of the
qubit. However, universal control of the qubit requires arbitrary rotations
around at least two axes. Here we show that by subjecting each electron spin to
a magnetic field of different magnitude we achieve full quantum control of the
two-electron logical spin qubit with nanosecond operation times. Using a single
device, a magnetic field gradient of several hundred milliTesla is generated
and sustained using dynamic nuclear polarization of the underlying Ga and As
nuclei. Universal control of the two-electron qubit is then demonstrated using
quantum state tomography. The presented technique provides the basis for single
and potentially multiple qubit operations with gate times that approach the
threshold required for quantum error correction.Comment: 11 pages, 4 figures. Supplementary Material included as ancillary
fil
Hot-carrier photocurrent effects at graphene-metal interfaces
Photoexcitation of graphene leads to an interesting sequence of phenomena,
some of which can be exploited in optoelectronic devices based on graphene. In
particular, the efficient and ultrafast generation of an electron distribution
with an elevated electron temperature and the concomitant generation of a
photo-thermoelectric voltage at symmetry-breaking interfaces is of interest for
photosensing and light harvesting. Here, we experimentally study the generated
photocurrent at the graphene-metal interface, focusing on the time-resolved
photocurrent, the effects of photon energy, Fermi energy and light
polarization. We show that a single framework based on photo-thermoelectric
photocurrent generation explains all experimental results
Near-field photocurrent nanoscopy on bare and encapsulated graphene
Opto-electronic devices utilizing graphene have already demonstrated unique
capabilities, which are much more difficult to realize with conventional
technologies. However, the requirements in terms of material quality and
uniformity are very demanding. A major roadblock towards high-performance
devices are the nanoscale variations of graphene properties, which strongly
impact the macroscopic device behaviour. Here, we present and apply
opto-electronic nanoscopy to measure locally both the optical and electronic
properties of graphene devices. This is achieved by combining scanning
near-field infrared nanoscopy with electrical device read-out, allowing
infrared photocurrent mapping at length scales of tens of nanometers. We apply
this technique to study the impact of edges and grain boundaries on spatial
carrier density profiles and local thermoelectric properties. Moreover, we show
that the technique can also be applied to encapsulated graphene/hexagonal boron
nitride (h-BN) devices, where we observe strong charge build-up near the edges,
and also address a device solution to this problem. The technique enables
nanoscale characterization for a broad range of common graphene devices without
the need of special device architectures or invasive graphene treatment
Generation of photovoltage in graphene on a femtosecond time scale through efficient carrier heating
Graphene is a promising material for ultrafast and broadband photodetection.
Earlier studies addressed the general operation of graphene-based
photo-thermoelectric devices, and the switching speed, which is limited by the
charge carrier cooling time, on the order of picoseconds. However, the
generation of the photovoltage could occur at a much faster time scale, as it
is associated with the carrier heating time. Here, we measure the photovoltage
generation time and find it to be faster than 50 femtoseconds. As a
proof-of-principle application of this ultrafast photodetector, we use graphene
to directly measure, electrically, the pulse duration of a sub-50 femtosecond
laser pulse. The observation that carrier heating is ultrafast suggests that
energy from absorbed photons can be efficiently transferred to carrier heat. To
study this, we examine the spectral response and find a constant spectral
responsivity between 500 and 1500 nm. This is consistent with efficient
electron heating. These results are promising for ultrafast femtosecond and
broadband photodetector applications.Comment: 6 pages, 4 figure
Driven coherent oscillations of a single electron spin in a quantum dot
The ability to control the quantum state of a single electron spin in a
quantum dot is at the heart of recent developments towards a scalable
spin-based quantum computer. In combination with the recently demonstrated
exchange gate between two neighbouring spins, driven coherent single spin
rotations would permit universal quantum operations. Here, we report the
experimental realization of single electron spin rotations in a double quantum
dot. First, we apply a continuous-wave oscillating magnetic field, generated
on-chip, and observe electron spin resonance in spin-dependent transport
measurements through the two dots. Next, we coherently control the quantum
state of the electron spin by applying short bursts of the oscillating magnetic
field and observe about eight oscillations of the spin state (so-called Rabi
oscillations) during a microsecond burst. These results demonstrate the
feasibility of operating single-electron spins in a quantum dot as quantum
bits.Comment: Total 25 pages. 11 pages main text, 5 figures, 9 pages supplementary
materia
Circuit Quantum Electrodynamics with a Spin Qubit
Circuit quantum electrodynamics allows spatially separated superconducting
qubits to interact via a "quantum bus", enabling two-qubit entanglement and the
implementation of simple quantum algorithms. We combine the circuit quantum
electrodynamics architecture with spin qubits by coupling an InAs nanowire
double quantum dot to a superconducting cavity. We drive single spin rotations
using electric dipole spin resonance and demonstrate that photons trapped in
the cavity are sensitive to single spin dynamics. The hybrid quantum system
allows measurements of the spin lifetime and the observation of coherent spin
rotations. Our results demonstrate that a spin-cavity coupling strength of 1
MHz is feasible.Comment: Related papers at http://pettagroup.princeton.edu
Spin qubits with electrically gated polyoxometalate molecules
Spin qubits offer one of the most promising routes to the implementation of
quantum computers. Very recent results in semiconductor quantum dots show that
electrically-controlled gating schemes are particularly well-suited for the
realization of a universal set of quantum logical gates. Scalability to a
larger number of qubits, however, remains an issue for such semiconductor
quantum dots. In contrast, a chemical bottom-up approach allows one to produce
identical units in which localized spins represent the qubits. Molecular
magnetism has produced a wide range of systems with tailored properties, but
molecules permitting electrical gating have been lacking. Here we propose to
use the polyoxometalate [PMo12O40(VO)2]q-, where two localized spins-1/2 can be
coupled through the electrons of the central core. Via electrical manipulation
of the molecular redox potential, the charge of the core can be changed. With
this setup, two-qubit gates and qubit readout can be implemented.Comment: 9 pages, 6 figures, to appear in Nature Nanotechnolog
Tuning ultrafast electron thermalization pathways in a van der Waals heterostructure
Ultrafast electron thermalization - the process leading to Auger
recombination, carrier multiplication via impact ionization and hot carrier
luminescence - occurs when optically excited electrons in a material undergo
rapid electron-electron scattering to redistribute excess energy and reach
electronic thermal equilibrium. Due to extremely short time and length scales,
the measurement and manipulation of electron thermalization in nanoscale
devices remains challenging even with the most advanced ultrafast laser
techniques. Here, we overcome this challenge by leveraging the atomic thinness
of two-dimensional van der Waals (vdW) materials in order to introduce a highly
tunable electron transfer pathway that directly competes with electron
thermalization. We realize this scheme in a graphene-boron nitride-graphene
(G-BN-G) vdW heterostructure, through which optically excited carriers are
transported from one graphene layer to the other. By applying an interlayer
bias voltage or varying the excitation photon energy, interlayer carrier
transport can be controlled to occur faster or slower than the intralayer
scattering events, thus effectively tuning the electron thermalization pathways
in graphene. Our findings, which demonstrate a novel means to probe and
directly modulate electron energy transport in nanoscale materials, represent
an important step toward designing and implementing novel optoelectronic and
energy-harvesting devices with tailored microscopic properties.Comment: Accepted to Nature Physic
Ultrafast optical control of entanglement between two quantum dot spins
The interaction between two quantum bits enables entanglement, the
two-particle correlations that are at the heart of quantum information science.
In semiconductor quantum dots much work has focused on demonstrating single
spin qubit control using optical techniques. However, optical control of
entanglement of two spin qubits remains a major challenge for scaling from a
single qubit to a full-fledged quantum information platform. Here, we combine
advances in vertically-stacked quantum dots with ultrafast laser techniques to
achieve optical control of the entangled state of two electron spins. Each
electron is in a separate InAs quantum dot, and the spins interact through
tunneling, where the tunneling rate determines how rapidly entangling
operations can be performed. The two-qubit gate speeds achieved here are over
an order of magnitude faster than in other systems. These results demonstrate
the viability and advantages of optically controlled quantum dot spins for
multi-qubit systems.Comment: 24 pages, 5 figure
Application of Graphene within Optoelectronic Devices and Transistors
Scientists are always yearning for new and exciting ways to unlock graphene's
true potential. However, recent reports suggest this two-dimensional material
may harbor some unique properties, making it a viable candidate for use in
optoelectronic and semiconducting devices. Whereas on one hand, graphene is
highly transparent due to its atomic thickness, the material does exhibit a
strong interaction with photons. This has clear advantages over existing
materials used in photonic devices such as Indium-based compounds. Moreover,
the material can be used to 'trap' light and alter the incident wavelength,
forming the basis of the plasmonic devices. We also highlight upon graphene's
nonlinear optical response to an applied electric field, and the phenomenon of
saturable absorption. Within the context of logical devices, graphene has no
discernible band-gap. Therefore, generating one will be of utmost importance.
Amongst many others, some existing methods to open this band-gap include
chemical doping, deformation of the honeycomb structure, or the use of carbon
nanotubes (CNTs). We shall also discuss various designs of transistors,
including those which incorporate CNTs, and others which exploit the idea of
quantum tunneling. A key advantage of the CNT transistor is that ballistic
transport occurs throughout the CNT channel, with short channel effects being
minimized. We shall also discuss recent developments of the graphene tunneling
transistor, with emphasis being placed upon its operational mechanism. Finally,
we provide perspective for incorporating graphene within high frequency
devices, which do not require a pre-defined band-gap.Comment: Due to be published in "Current Topics in Applied Spectroscopy and
the Science of Nanomaterials" - Springer (Fall 2014). (17 pages, 19 figures
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