Opto-electronic devices utilizing graphene have already demonstrated unique
capabilities, which are much more difficult to realize with conventional
technologies. However, the requirements in terms of material quality and
uniformity are very demanding. A major roadblock towards high-performance
devices are the nanoscale variations of graphene properties, which strongly
impact the macroscopic device behaviour. Here, we present and apply
opto-electronic nanoscopy to measure locally both the optical and electronic
properties of graphene devices. This is achieved by combining scanning
near-field infrared nanoscopy with electrical device read-out, allowing
infrared photocurrent mapping at length scales of tens of nanometers. We apply
this technique to study the impact of edges and grain boundaries on spatial
carrier density profiles and local thermoelectric properties. Moreover, we show
that the technique can also be applied to encapsulated graphene/hexagonal boron
nitride (h-BN) devices, where we observe strong charge build-up near the edges,
and also address a device solution to this problem. The technique enables
nanoscale characterization for a broad range of common graphene devices without
the need of special device architectures or invasive graphene treatment