Influence of substrate annealing on inducing Ti3+ and oxygen vacancy in TiO2 thin films deposited via RF magnetron sputtering

Nano-crystalline TiO2 has been prepared by RF magnetron sputtering at varied substrate temperatures ranging from 200 to 500 °C. The alteration of oxygen and titanium atom in TiO2 at uppermost surface is clearly observed on the effect of annealing temperature by Auger Electron Spectroscopy (AES) technique. The measurement of peak to peak value of Ti and O transition line at 400 °C indicates the surface chemical state of O2 in TiO2 thin films defect at surface and Fermi level was analyzed using the X-Ray Photoelectron Spectroscopy (XPS). The Ti 2p observation of pre and post surface treatment shows the concentration of Ti3+ is seven times higher after post sputtered for sample 200 °C. Ti3+ decrease by increasing temperature. The Ti3+-oxygen vacancy which also assigned as Ti2O3 occurred in all sample, yet sample deposited at 400 °C gives nearest binding energy for Ti2O3. This observation also supported by The Time of Flight Secondary Ion Mass Spectrometry (ToF-SIMS) analysis which shows highest total ion count for positive polarity is O+ for sample at 300 °C and Ti ion dominant is Ti2O3 + for sample at 400 °C. Based on the analyses, it is clearly seen that high defect of Ti3+-oxygen vacancy which is located between surface layer and fermi level state, this defect levels was created at surface layer at low annealing temperature. However, increasing temperature leads to defect creation on bellow surface layer which consider as within fermi level laye

Zinc Oxide Nanostructures for Efficient Energy Conversion in Organic Solar Cell

We present a new approach of solution-processed using zinc oxide (ZnO) nanostructures as extraction layer material for organic solar cells. It is low chemical reaction compatibility with all types of organic blends and its good adhesion to both surfaces of ITO/glass substrate and the active layer (blends). Parameters such as the thickness and the morphology of the films were investigated to prove that these factors greatly affect the efficiency of organic solar cells. In this work, ZnO layer with thickness of approximately 53 nm was used as an interlayer to prevent pin-holes between the electrode and the polymer layer. The polymer layer was coated on the ZnO layer with the thickness of about 150 nm. The thick polymer layer will form a non-uniform surface because of the solvent, 1-2dichlorobenzene will etch away some region of the polymer layer and forming pin-holes. ZnO nanostructures layer was used to prevent pin-holes between the polymer layer and electrode. From the surface morphology of ZnO layer, it shows a uniform surface with particle grain size obtained between 50 -100 nm. The presence of the interlayer has a positive effect on the electrical characteristics of the solar cells. It was found that an organic solar cell with thickness less than 150 nm shows the optimum performance with efficiency of 0.0067% and Fill Factor (FF) of about 19.73

Difference in structural and chemical properties of sol–gel spin coated Al doped TiO2, Y doped TiO2 and Gd doped TiO2 based on trivalent dopants

n this research, pure titanium dioxide (TiO2) and doped TiO2 thin film layers were prepared using the spin coating method of titanium(IV) butoxide on a glass substrate from the sol–gel method and annealed at 500 �C. The effects on the structural and chemical properties of these thin films were then investigated. The metal doped TiO2 thin film which exists as trivalent electrons consists of aluminium (Al), yttrium (Y) and gadolinium (Gd). The anatase phase of the thin films was observed and it was found that the crystal size became smaller when the concentration of thin film increased. The grain size was found to be 0.487 to 13.925 nm. The types of surface morphologies of the thin films were nanoporous, with a little agglomeration and smaller nanoparticles corresponding to Al doped TiO2, Y doped TiO2 and Gd doped TiO2, respectively. The trivalent doping concentration of the thin films increased with a rising of thickness of the thin film. This can contribute to the defects that give advantages to the thin film when the mobility of the hole carriers is high and the electrons of Ti can move easily. Thus, Ti3+ existed as a defect state in the metal doped TiO2 thin film based on lattice distortion with a faster growth thin film that encouraged the formation of a higher level of oxygen vacancy defects

Oxide semiconductors for solar to chemical energy conversion: nanotechnology approach

The present work considers the application of oxide semiconductors in the conversion of solar energy into the chemical energy required for water purification (removal of microbial cells and toxic organic compounds from water) and the generation of solar hydrogen fuel by photoelectrochemical water splitting. The first part of this work considers the concept of solar energy conversion by oxide semiconductors and the key performance-related properties, including electronic structure, charge transport, flat band potential and surface properties, which are responsible to the reactivity and photoreactivity of oxides with water. The performance of oxide systems for solar energy conversion is briefly considered in terms of an electronic factor. The progress of research in the formation of systems with high performance is considered in terms of specific aspects of nanotechnology, leading to the formation of systems with high performance. The nanotechnology approach in the development of high-performance photocatalysts is considered in terms of the effect of surface energy associated with the formation of nanostructured system on the formation of surface structures that exhibit outstanding properties. The unresolved problems that should be tackled in better understanding of the effect of nanostructures on properties and performance of oxide semiconductors in solar energy conversion are discussed. This part is summarised by a list of unresolved problems of crucial importance in the formation of systems with enhanced performance. This work also formulates the questions that must be addressed in order to overcome the hurdles in the formation of oxide semiconductors with high performance in water purification and the generation of solar fuel. The research strategy in the development of oxide systems with high performance, including photocatalysts for solar water purification and photoelectrodes for photoelectrochemical water splitting, is considered. The considerations are focused on the systems based on titanium dioxide of different defect disorder as well as its solid solutions and composites