Controlled Growth, Patterning and Placement of Carbon Nanotube Thin Films

Controlled growth, patterning and placement of carbon nanotube (CNT) thin films for electronic applications are demonstrated. The density of CNT films is controlled by optimizing the feed gas composition as well as the concentration of growth catalyst in a chemical vapor deposition process. Densities of CNTs ranging from 0.02 CNTs/{\mu}m^2 to 1.29 CNTs/{\mu}m^2 are obtained. The resulting pristine CNT thin films are then successfully patterned using either pre-growth or post-growth techniques. By developing a layered photoresist process that is compatible with ferric nitrate catalyst, significant improvements over popular pre-growth patterning methods are obtained. Limitations of traditional post-growth patterning methods are circumvented by selective transfer printing of CNTs with either thermoplastic or metallic stamps. Resulting as-grown patterns of CNT thin films have edge roughness (< 1 {\mu}m) and resolution (< 5 {\mu}m) comparable to standard photolithography. Bottom gate CNT thin film devices are fabricated with field-effect mobilities up to 20 cm^2/Vs and on/off ratios of the order of 10^3. The patterning and transfer printing methods discussed here have a potential to be generalized to include other nanomaterials in new device configurations

Localization, Coulomb interactions and electrical heating in single-wall carbon nanotubes/polymer composites

Low field and high field transport properties of carbon nanotubes/polymer composites are investigated for different tube fractions. Above the percolation threshold f_c=0.33%, transport is due to hopping of localized charge carriers with a localization length xi=10-30 nm. Coulomb interactions associated with a soft gap Delta_CG=2.5 meV are present at low temperature close to f_c. We argue that it originates from the Coulomb charging energy effect which is partly screened by adjacent bundles. The high field conductivity is described within an electrical heating scheme. All the results suggest that using composites close to the percolation threshold may be a way to access intrinsic properties of the nanotubes by experiments at a macroscopic scale.Comment: 4 pages, 5 figures, Submitted to Phys. Rev.

Passivating graphene and suppressing interfacial phonon scattering with mechanically transferred large-area Ga2O3

Quantum Matter and Optic

Electronic Structure of Carbon Nanotube Ropes

We present a tight binding theory to analyze the motion of electrons between carbon nanotubes bundled into a carbon nanotube rope. The theory is developed starting from a description of the propagating Bloch waves on ideal tubes, and the effects of intertube motion are treated perturbatively in this basis. Expressions for the interwall tunneling amplitudes between states on neighboring tubes are derived which show the dependence on chiral angles and intratube crystal momenta. We find that conservation of crystal momentum along the tube direction suppresses interwall coherence in a carbon nanorope containing tubes with random chiralities. Numerical calculations are presented which indicate that electronic states in a rope are localized in the transverse direction with a coherence length corresponding to a tube diameter.Comment: 15 pages, 10 eps figure

Dynamical Mean-Field Theory of Electron-Phonon Interactions in Correlated Systems: Application to Isotope Effects on Electronic Properties

We use a recently developed formalism (combining an adiabatic expansion and dynamical mean-field theory) to obtain expressions for isotope effects on electronic properties in correlated systems. As an example we calculate the isotope effect on electron effective mass for the Holstein model as a function of electron-phonon interaction strength and doping. Our systematic expansion generates diagrams neglected in previous studies, which turn out to give the dominant contributions. The isotope effect is small unless the system is near a lattice instability. We compare this to experiment.Comment: 6 pages, 4 figures; added discussion of isotope effect away from half fillin

Diffusive Charge Transport in Graphene on SiO2

We review our recent work on the physical mechanisms limiting the mobility of graphene on SiO2. We have used intentional addition of charged scattering impurities and systematic variation of the dielectric environment to differentiate the effects of charged impurities and short-range scatterers. The results show that charged impurities indeed lead to a conductivity linear in density in graphene, with a scattering magnitude that agrees quantitatively with theoretical estimates [1]; increased dielectric screening reduces scattering from charged impurities, but increases scattering from short-range scatterers [2]. We evaluate the effects of the corrugations (ripples) of graphene on SiO2 on transport by measuring the height-height correlation function. The results show that the corrugations cannot mimic long-range (charged impurity) scattering effects, and have too small an amplitude-to-wavelength ratio to significantly affect the observed mobility via short-range scattering [3, 4]. Temperature-dependent measurements show that longitudinal acoustic phonons in graphene produce a resistivity linear in temperature and independent of carrier density [5]; at higher temperatures, polar optical phonons of the SiO2 substrate give rise to an activated, carrier density-dependent resistivity [5]. Together the results paint a complete picture of charge carrier transport in graphene on SiO2 in the diffusive regime.Comment: 28 pages, 7 figures, submitted to Graphene Week proceeding

Non-Drude THz conductivity of graphene due to structural distortions

Quantum Matter and Optic

Suppression of the vortex glass transition due to correlated defects with a persistent direction perpendicular to an applied magnetic field

It is found on the basis of the lowest Landau level approach for the Ginzburg-Landau model that, in bulk type II superconductors with strong line disorder directed {\it perpendicularly} to an applied field, the continuous vortex-glass transition is depressed to the low $T$ limit in the limit of weak {\it point} disorder. An anomalous resistive broadening in twin-free YBCO with columnar defects in a field parallel to the layers is discussed based on this theoretical finding. Other phenomena which, we argue, arise indirectly from this mechanism in type II superconductors including correlated defects are also discussed.Comment: 5 pages, 3 figures, Fig.2 and text were modified. To appear in Phys. Rev. B (Rapid Comunication