Origin of faceted surface hillocks on semi-polar (1 1 2 ¯ 2) GaN templates grown on pre-structured sapphire

The microstructure of semi-polar (1 1 2 2) GaN templates grown on pre-structured r-plane sapphire by metal–organic vapor phase epitaxy (MOVPE) followed by hydride vapor phase epitaxy (HVPE) has been characterised by transmission electron microscopy (TEM). It is found that dislocations originating from the inclined c-plane-like GaN/sapphire interface bend and then terminate either at the coalescence regions of the adjacent GaN stripes or at the SiO2 mask. However, the regions associated with the coalescence event during the MOVPE growth act as a source of dislocations and stacking faults in the subsequent growth process. More importantly, a direct link between the formation of a surface hillock, the presence of an inversion domain, and the preferential nucleation of randomly oriented GaN particles at a region containing a dislocation bundle originating from coalescence has been established. It is suggested that controlling the surface conditions of the MOVPE GaN layer before HVPE and optimising the HVPE nucleation process are important to avoid the surface hillocks.This work was financially supported by the European Commission (FP7) within the framework of the project “AlGaInN materials on semi-polar templates for yellow emission in solid state lighting applications” (ALIGHT) (Project no.: 280587) and by the Deutsche Forschungsgemeinschaft (DFG) within the framework of the project “Polarization Field Control in Nitride Light Emitters” (PolarCoN).This is the accepted manuscript for a paper published in Journal of Crystal Growth Volume 415, 1 April 2015, Pages 170–175, doi: 10.1016/j.jcrysgro.2014.12.04

The Auxological and Biochemical Continuum of Short Children Born Small for Gestational Age (SGA) or with Normal Birth Size (Idiopathic Short Stature)

Objective. Retrospective single-centre analysis of growth characteristics in 182 healthy short children born small for gestational age (SGA) or appropriate for gestational age (idiopathic short stature, ISS). Methods. Birth size references from the USA and Sweden were compared, and for the classification as SGA or ISS the Swedish reference was chosen. Height, target height (TH), bone age (BA), predicted adult height (PAH), IGF-I and IGFBP-3 values were compared between SGA and ISS. Results. In the combined group, birth weight and length showed a symmetric Gaussian distribution. The American reference overestimates the percentage of short birth length and underestimates that of low birth weight. In childhood, SGA children were shorter than ISS (−3.1 versus −2.6 SDS, P < .001), also in comparison to TH (−2.6 versus −1.9 SDS, P < .001). TH, height SDS change over time, BA delay, and PAH were similar. IGF-I and IGFBP-3 were lower in ISS (P = .03 and .09). Conclusions. SGA children represent the left tail of the Gaussian distribution of birth size in short children. The distinction between SGA and ISS depends on birth size reference. Childhood height of SGA is lower than of ISS, but the other auxological features are similar

1s2p resonant inelastic x-ray scattering in a-Fe2O3

We report experimental and theoretical results on the Fe K edge x-ray absorption spectrum and 1s2p resonant inelastic x-ray scattering (RIXS) spectra in a-Fe2O3 . The results are interpreted using an FeO6^9- cluster model with intra-atomic multiplet coupling and interatomic covalency hybridization. The 1s2p RIXS is treated as a coherent second-order optical process. It is shown that the double-peak structure in the pre-edge region of Fe K absorption spectrum is due to the cubic crystal-field splitting, and that the intensity of the eg (t2g) component in the 1s2p resonant inelastic spectrum is enhanced by tuning the incident photon energy to the eg (t2g) component in the absorption spectrum

Comparative study of polar and semipolar (1122) InGaN layers grown by metalorganic vapour phase epitaxy

InGaN layers were grown simultaneously on (11¯22) GaN and (0001) GaN templates by metalorganic vapour phase epitaxy. At higher growth temperature ( 750oC), the indium content (<15%) of the (11¯22) and (0001) InGaN layers was similar. However, for temperatures less than 750oC, the indium content of the (11¯22) InGaN layers (15 - 26%) was generally lower than those with (0001) orientation (15 - 32%). The compositional deviation was attributed to the different strain relaxations between the (11¯22) and (0001) InGaN layers. Room temperature photoluminescence measurements of the (11¯22) InGaN layers showed an emission wavelength that shifts gradually from 380 nm to 580 nm with decreasing growth temperature (or increasing indium composition). The peak emission wavelength of the (11 ¯22) InGaN layers with an indium content of more than 10% blue-shifted a constant value of (50 - 60) nm when using higher excitation power densities. This blue-shift was attributed to band lling effects in the layers.This work was nancially supported by the EU-FP7 ALIGHT project, under agreement no. FP7-280587. This work was also partially supported by the Programme for Research in Third Level Institutions (PRTLI) fourth and fth cycles. SNA acknowledges nancial support for his postgraduate fellowship from the Iranian Ministry of Science, Research and Technology. PJP acknowledges nancial support for his Professorship from Science Foundation Ireland.This is the accepted manuscript. The final version is available from AIP at http://scitation.aip.org/content/aip/journal/jap/116/15/10.1063/1.489856

Inelastic x-ray scattering at the National Synchrotron Light

The research program at the inelastic x-ray scattering beamline at the National Synchrotron Light Source is focused on the study of elementary excitations in condensed matter with total energy resolution on the order of 0.1 eV to 1.0 eV. Results from selected experiments are reported to demonstrate the capability of the beamline as well as the information can be obtained from inelastic x- ray scattering experiments

High bandwidth freestanding semipolar (11–22) InGaN/GaN light-emitting diodes

Freestanding semipolar (11–22) indium gallium nitride (InGaN) multiplequantum-well light-emitting diodes (LEDs) emitting at 445 nm have been realized by the use of laser lift-off (LLO) of the LEDs from a 50- m-thick GaN layer grown on a patterned (10–12) r -plane sapphire substrate (PSS). The GaN grooves originating from the growth on PSS were removed by chemical mechanical polishing. The 300 m × 300 m LEDs showed a turn-on voltage of 3.6 V and an output power through the smooth substrate of 0.87 mW at 20 mA. The electroluminescence spectrum of LEDs before and after LLO showed a stronger emission intensity along the [11–23]InGaN/GaN direction. The polarization anisotropy is independent of the GaN grooves, with a measured value of 0.14. The bandwidth of the LEDs is in excess of 150 MHz at 20 mA, and back-to-back transmission of 300 Mbps is demonstrated, making these devices suitable for visible light communication (VLC) applications

Association Analysis of Ten Candidate Genes in a Large Multinational Cohort of Small for Gestational Age Children and Children with Idiopathic Short Stature (NESTEGG study)

Background: Fetal growth failure has been associated with an increased risk of hypertension, cardiovascular disease and diabetes in adulthood. Exploring the mechanisms underlying this association should improve our understanding of these common adult diseases. Patients and Methods: We investigated 225 SNPs in 10 genes involved in growth and glucose metabolism (GH1, GHR, IGF1, IGF1R, STAT5A, STAT5B, MAPK1, MAPK3, PPARγ and INS) in 1,437 children from the multinational NESTEGG consortium: 345 patients born small for gestational age who remained short (SGA-S), 288 who showed catch-up growth (SGA-Cu), 410 idiopathic short stature (ISS) and 394 controls. We related genotype to pre- and/or postnatal growth parameters, response to growth hormone (if applicable) and blood pressure. Results: We found several clinical associations for GH1, GHR, IGF1, IGF1R, PPARγ and MAPK1. One SNP remained significant after Bonferroni's correction: IGF1R SNP rs4966035's minor allele A was significantly more prevalent among SGA and associated with smaller birth length (p = 0.000378) and birth weight (weaker association), independent of gestational age. Conclusion:IGF1R SNP rs4966035 is significantly associated with birth length, independent of gestational age. This and other associations suggest that polymorphisms in these genes might partly explain the phenotype of short children born SGA and children with ISS