93 research outputs found
Band-edge diagrams for strained III-V semiconductor quantum wells, wires, and dots
We have calculated band-edge energies for most combinations of zincblende
AlN, GaN, InN, GaP, GaAs, InP, InAs, GaSb and InSb in which one material is
strained to the other. Calculations were done for three different geometries,
quantum wells, wires, and dots, and mean effective masses were computed in
order to estimate confinement energies. For quantum wells, we have also
calculated band-edges for ternary alloys. Energy gaps, including confinement,
may be easily and accurately estimated using band energies and a simple
effective mass approximation, yielding excellent agreement with experimental
results. By calculating all material combinations we have identified novel and
interesting material combinations, such as artificial donors, that have not
been experimentally realized. The calculations were perfomed using
strain-dependent k-dot-p theory and provide a comprehensive overview of band
structures for strained heterostructures.Comment: 9 pages, 17 figure
Fabrication, optical characterization and modeling of strained core-shell nanowires
Strained nanowires with varying InAs/InP core-shell thicknesses were grown
using Chemical Beam Epitaxy. Microphotoluminescence spectroscopy, performed at
low temperature, was then used to study the optical properties of single wires.
Emission from the InAs core was observed and its dependence on the shell
thickness/core diameter ratio was investigated. We found that it is possible to
tune the emission energy towards 0.8 eV by controlling this ratio. We have
compared the measured energies with calculated energies. Our findings are
consistent with the wires having a hexagonal crystal structure.Comment: 9 pages, 5 figures, Proceedings of the Eighth International
Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
and the Thirteenth International Congress on Thin Films - ACSIN-8/ICTF-1
Electronic structure of strained InP/GaInP quantum dots
We calculate the electronic structure of nm scale InP islands embedded in
. The calculations are done in the envelope approximation
and include the effects of strain, piezoelectric polarization, and mixing among
6 valence bands. The electrons are confined within the entire island, while the
holes are confined to strain induced pockets. One pocket forms a ring at the
bottom of the island near the substrate interface, while the other is above the
island in the GaInP. The two sets of hole states are decoupled. Polarization
dependent dipole matrix elements are calculated for both types of hole states.Comment: Typographical error corrected in strain Hamiltonia
Optimization of supply diversity for the self-assembly of simple objects in two and three dimensions
The field of algorithmic self-assembly is concerned with the design and
analysis of self-assembly systems from a computational perspective, that is,
from the perspective of mathematical problems whose study may give insight into
the natural processes through which elementary objects self-assemble into more
complex ones. One of the main problems of algorithmic self-assembly is the
minimum tile set problem (MTSP), which asks for a collection of types of
elementary objects (called tiles) to be found for the self-assembly of an
object having a pre-established shape. Such a collection is to be as concise as
possible, thus minimizing supply diversity, while satisfying a set of stringent
constraints having to do with the termination and other properties of the
self-assembly process from its tile types. We present a study of what we think
is the first practical approach to MTSP. Our study starts with the introduction
of an evolutionary heuristic to tackle MTSP and includes results from extensive
experimentation with the heuristic on the self-assembly of simple objects in
two and three dimensions. The heuristic we introduce combines classic elements
from the field of evolutionary computation with a problem-specific variant of
Pareto dominance into a multi-objective approach to MTSP.Comment: Minor typos correcte
Optimization of the short-circuit current in an InP nanowire array solar cell through opto-electronic modeling
Anomalous quantum confined Stark effects in stacked InAs/GaAs self-assembled quantum dots
Vertically stacked and coupled InAs/GaAs self-assembled quantum dots (SADs)
are predicted to exhibit a strong non-parabolic dependence of the interband
transition energy on the electric field, which is not encountered in single SAD
structures nor in other types of quantum structures. Our study based on an
eight-band strain-dependent Hamiltonian indicates that
this anomalous quantum confined Stark effect is caused by the three-dimensional
strain field distribution which influences drastically the hole states in the
stacked SAD structures.Comment: 4 pages, 4 figure
Optical properties and morphology of InAs ∕ InP (113)B surface quantum dots
We report on long-wavelength photoluminescence(PL) emission at room temperature from self-organized InAssurfacequantum dotsgrown by gas-source molecular beam epitaxy on a GaInAsP∕InP (113)B substrate. The influence of arsenic pressure conditions during growth on the PL emission of surfacequantum dots is detailed as well as oxide/contamination layer formation after growth. Experimental results are in good agreement with six-band k⋅p theory in the envelope function approximation.This work was supported by the SANDIE European Network
of Excellence
Sub-microsecond correlations in photoluminescence from InAs quantum dots
Photon correlation measurements reveal memory effects in the optical emission
of single InAs quantum dots with timescales from 10 to 800 ns. With above-band
optical excitation, a long-timescale negative correlation (antibunching) is
observed, while with quasi-resonant excitation, a positive correlation
(blinking) is observed. A simple model based on long-lived charged states is
presented that approximately explains the observed behavior, providing insight
into the excitation process. Such memory effects can limit the internal
efficiency of light emitters based on single quantum dots, and could also be
problematic for proposed quantum-computation schemes.Comment: 8 pages, 8 figure
Unintentional high density p-type modulation doping of a GaAs/AlAs core-multi-shell nanowire
Achieving significant doping in GaAs/AlAs core/shell nanowires (NWs) is of
considerable technological importance but remains a challenge due to the
amphoteric behavior of the dopant atoms. Here we show that placing a narrow
GaAs quantum well in the AlAs shell effectively getters residual carbon
acceptors leading to an \emph{unintentional} p-type doping. Magneto-optical
studies of such a GaAs/AlAs core multi-shell NW reveal quantum confined
emission. Theoretical calculations of NW electronic structure confirm quantum
confinement of carriers at the core/shell interface due to the presence of
ionized carbon acceptors in the 1~nm GaAs layer in the shell.
Micro-photoluminescence in high magnetic field shows a clear signature of
avoided crossings of the Landau level emission line with the Landau
level TO phonon replica. The coupling is caused by the resonant hole-phonon
interaction, which points to a large 2D hole density in the structure.Comment: just published in Nano Letters
(http://pubs.acs.org/doi/full/10.1021/nl500818k
Equilibrium shapes and energies of coherent strained InP islands
The equilibrium shapes and energies of coherent strained InP islands grown on
GaP have been investigated with a hybrid approach that has been previously
applied to InAs islands on GaAs. This combines calculations of the surface
energies by density functional theory and the bulk deformation energies by
continuum elasticity theory. The calculated equilibrium shapes for different
chemical environments exhibit the {101}, {111}, {\=1\=1\=1} facets and a (001)
top surface. They compare quite well with recent atomic-force microscopy data.
Thus in the InP/GaInP-system a considerable equilibration of the individual
islands with respect to their shapes can be achieved. We discuss the
implications of our results for the Ostwald ripening of the coherent InP
islands. In addition we compare strain fields in uncapped and capped islands.Comment: 10 pages including 6 figures. Submitted to Phys. Rev. B. Related
publications can be found at http://www.fhi-berlin.mpg.de/th/paper.htm
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