Self-assembling processes involved in the molecular beam epitaxy growth of stacked InAs/InP quantum wires

The growth mechanism of stacked InAs/InP(001) quantum wires (QWRs) is studied by combining an atomic-scale cross-sectional scanning tunnelling microscopy analysis with in situ and in real-time stress measurements along the [110] direction (sensitive to stress relaxation during QWR formation). QWRs in stacked layers grow by a non-Stranski–Krastanov (SK) process which involves the production of extra InAs by strain-enhanced As/P exchange and a strong strain driven mass transport. Despite the different growth mechanism of the QWR between the first and following layers of the stack, the QWRs maintain on average the same shape and composition in all the layers of the stack, revealing the high stability of this QWR configuration

Native Chilean Fruits and the Effects of their Functional Compounds on Human Health

In recent years, there has been great interest in the nutraceutical compounds of fruits from native Chilean plant species. In this context, fruits of Amomyrtus meli (Meli), Aristotelia chilensis (Maqui), Berberis microphylla (Calafate), Luma apiculata (Arrayán), Luma chequén (Chequén), and Ugni molinae (Murtilla) growing predominantly in Chilean forests have been studied. This chapter has compiled the existing information about antioxidant activity and antioxidant compound contents of the above mentioned fruit species and their association with the prevention of pathophysiological disorders in humans, such as inflammation, diabetes, and cardiovascular diseases. Results show that the antioxidant compounds of these species, particularly anthocyanins, decrease inflammation as well as the risk of diabetes and cardiovascular diseases. Therefore, consumption of these fruits is a good alternative for preventing cardiovascular and age-related diseases and pathophysiological disorders

Gas sensor based on room temperature optical properties of Surface QDs

Self-organized InGaAs QDs are intensively studied for optoelectronic applications. Several approaches are in study to reach the emission wavelengths needed for these applications. The use of antimony (Sb) in either the capping layer or into the dots is one example. However, these studies are normally focused on buried QD (BQD) where there are still different controversial theories concerning the role of Sb. Ones suggest that Sb incorporates into the dot [1], while others support the hypothesis that the Sb occupies positions surrounding the dot [2] thus helping to keep their shape during the capping growth

Size, strain, and band offset engineering in GaAs(Sb)(N)-capped InAs quantum dots for 1.3 - 1.55 µm LEDs and LDs

The optical and structural properties of InAs/GaAs quantum dots (QD) are strongly modified through the use of a thin (~ 5 nm) GaAsSb(N) capping layer. In the case of GaAsSb-capped QDs, cross-sectional scanning tunnelling microscopy measurements show that the QD height can be controllably tuned through the Sb content up to ~ 14 % Sb. The increased QD height (together with the reduced strain) gives rise to a strong red shift and a large enhancement of the photoluminescence (PL) characteristics. This is due to improved carrier confinement and reduced sensitivity of the excitonic bandgap to QD size fluctuations within the ensemble. Moreover, the PL degradation with temperature is strongly reduced in the presence of Sb. Despite this, emission in the 1.5 !lm region with these structures is only achieved for high Sb contents and a type-II band alignment that degrades the PL. Adding small amounts of N to the GaAsSb capping layer allows to progressively reduce the QD-barrier conduction band offset. This different strategy to red shift the PL allows reaching 1.5 !lm with moderate Sb contents, keeping therefore a type-I alignment. Nevertheless, the PL emission is progressively degraded when the N content in the capping layer is increase

The influence of Ga composition of GaInAsN QDs on N incorporation.

Currently, dilute nitride III-N-As semiconductors, such as InGaAsN/GaAs quantum well material system, allow to develop very competitive lasers at long wavelength emission (1.3 µm). However, longer wavelengths, such as 1.55 µm, are very difficult to achieve without making worse the performance of the device. Alternatively, as it is well known, great efforts are being devoted to the study of dilute nitride III-N-As quantum dots (QDs) semiconductor [1]. Mainly, this is due to the attractive advantages that they show over other materials and structures: the strong reduction in the bandgap of the III-As semiconductor by adding even a few percent of nitrogen into them, and the interesting physical properties that the QDs offer to laser characteristics (e.g. low threshold current, etc

Near infrared high efficiency InAs/GaAsSb QDLEDs: band alignment and carrier recombination mechanisms

The development of high efficiency laser diodes (LD) and light emitting diodes (LED) covering the 1.0 to 1.55 μm region of the spectra using GaAs heteroepitaxy has been long pursued. Due to the lack of materials that can be grown lattice-macthed to GaAs with bandgaps in the 1.0 to 1.55 μm region, quantum wells (QW) or quantum dots (QD) need be used. The most successful approach with QWs has been to use InGaAs, but one needs to add another element, such as N, to be able to reach 1.3/1.5μm. Even though LDs have been successfully demonstrated with the QW approach, using N leads to problems with compositional homogeneity across the wafer, and limited efficiency due to strong non-radiative recombination. The alternative approach of using InAs QDs is an attractive option, but once again, to reach the longest wavelengths one needs very large QDs and control over the size distribution and band alignment. In this work we demonstrate InAs/GaAsSb QDLEDs with high efficiencies, emitting from 1.1 to 1.52 μm, and we analyze the band alignment and carrier loss mechanisms that result from the presence of Sb in the capping layer

Optimization of InGaAsN(Sb)/GaAs quantum dots for optical emission at 1.55 µm with low optical degradation

Low optical degradation in GaInAsN(Sb)/GaAs quantum dots (QDs) p–i–n structures emitting up to 1.55 μm is presented in this paper. We obtain emission at different energies by means of varying N content from 1 to 4%. The samples show a low photoluminescence (PL) intensity degradation of only 1 order of magnitude when they are compared with pure InGaAs QD structures, even for an emission wavelength as large as 1.55 μm. The optimization studies of these structures for emission at 1.55 μm are reported in this work. High surface density and homogeneity in the QD layers are achieved for 50% In content by rapid decrease in the growth temperature after the formation of the nanostructures. Besides, the effect of N and Sb incorporation in the redshift and PL intensity of the samples is studied by post-growth rapid thermal annealing treatments. As a general conclusion, we observe that the addition of Sb to QD with low N mole fraction is more efficient to reach 1.55 μm and high PL intensity than using high N incorporation in the QD. Also, the growth temperature is determined to be an important parameter to obtain good emission characteristics. Finally, we report room temperature PL emission of InGaAsN(Sb)/GaAs at 1.4 μm

Biomechanical behavior of customized scaffolds: A three-dimensional finite element analysis

Teeth loss due to periodontal diseases, trauma, or infections often causes dimensional loss in the affected maxillary. In patients with reduced maxillary size, restoration of chewing function and esthetics with endosseous dental implants may fail. The aim of this work was to simulate the biomechanical behavior, using the finite element method, of customized scaffolds fixed by a dental implant on a partially edentulous jaw. Porous scaffolds were designed from medical images of a partially edentulous jaw with type IV bone quality. The influence of the diameter of the hole and the porosity of the scaffold on the maximum levels of stress and strain in the peri-implant bone was evaluated. The highest stress values in the scaffolds, dental implant, and crown were lower than the yield strength of their respective materials. The customized scaffolds allow to recover the dimensions of the evaluated jaw. A significant decrease in stress and strain values was observed in the peri-implant cortical bone. Furthermore, it was found that the evaluated parameters did not have a significant influence on the maximum von Mises equivalent stress and maximum strain values in the peri-implant bone.MCIN/ AEI/10.13039/501100011033 PID2019-109371 GB-I0

Environmental predictors of filarial infection in Amazonian primates : Ecological factors and primate filarial infection

Altres ajuts: acord transformatiu CRUE-CSICUTP en procés de revisióAltres ajuts: ERANet17/HLH-0271, and by the National Council for Scientific and Technological Development (CNPq) (grant number 201,475/2017-0).Filarial nematode infections are common in primates, but have received little attention in the Neotropics. Epidemiological data on filarial infections in primates are still too sparse to fully understand the complex of this parasitism, especially because of the difficulty in studying the ecology and epidemiology of wild primates. We describe natural infections by Dipetalonema parasitizing 211 primates belonging to eight free-living primate genera in Amazonia, and assess the relationships between parasitic indicators and climatic (rainfall and river level), ecological (fruiting periods of plants) and biological (sex, species' body mass, group size and density) factors. The overall prevalence was 64.4% (95% CI: 64.0 - 64.9); parasitic mean abundance (N filariae per individual) and parasitic mean intensity (N filariae per infected host) of infection were 11.9 (95% CI: 8.3 - 15.6) and 18.4 (95% CI: 13.4 - 23.4) filariae/individual, respectively. Although we observed differences in parasitic parameters among primate genera, there was no correlation between parasitic parameters with density, body mass or group size. Sapajus, Cebus and Lagothrix had the highest prevalence and parasitic mean intensity. Using Lagothrix lagotricha poeppigii, the most sampled species (n = 92), as a model, we found that the number of filariae per infected host was associated with fruit production in swamp forests during the dry season, the time of food scarcity. The long periods of food shortage may cause environmental stress on primates, impairing their immune defenses and leading to increased parasite load but not affecting infection prevalence. However, the lack of information on vector ecology, key to understand risk factors associated to infection rate, prevents confirming the existence of an infection pattern dependent on food availability

Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots

The use of GaAsSbN capping layers on InAs/GaAs quantum dots (QDs) has recently been proposed for micro- and optoelectronic applications for their ability to independently tailor electron and hole confinement potentials. However, there is a lack of knowledge about the structural and compositional changes associated with the process of simultaneous Sb and N incorporation. In the present work, we have characterized using transmission electron microscopy techniques the effects of adding N in the GaAsSb/InAs/GaAs QD system. Firstly, strain maps of the regions away from the InAs QDs had revealed a huge reduction of the strain fields with the N incorporation but a higher inhomogeneity, which points to a composition modulation enhancement with the presence of Sb-rich and Sb-poor regions in the range of a few nanometers. On the other hand, the average strain in the QDs and surroundings is also similar in both cases. It could be explained by the accumulation of Sb above the QDs, compensating the tensile strain induced by the N incorporation together with an In-Ga intermixing inhibition. Indeed, compositional maps of column resolution from aberration-corrected Z-contrast images confirmed that the addition of N enhances the preferential deposition of Sb above the InAs QD, giving rise to an undulation of the growth front. As an outcome, the strong redshift in the photoluminescence spectrum of the GaAsSbN sample cannot be attributed only to the N-related reduction of the conduction band offset but also to an enhancement of the effect of Sb on the QD band structure