Determination of complex dielectric functions of ion implanted and implanted‐annealed amorphous silicon by spectroscopic ellipsometry

Measuring with a spectroscopic ellipsometer (SE) in the 1.8–4.5 eV photon energy region we determined the complex dielectric function (ϵ = ϵ1 + iϵ2) of different kinds of amorphous silicon prepared by self‐implantation and thermal relaxation (500 °C, 3 h). These measurements show that the complex dielectric function (and thus the complex refractive index) of implanted a‐Si (i‐a‐Si) differs from that of relaxed (annealed) a‐Si (r‐a‐Si). Moreover, its ϵ differs from the ϵ of evaporated a‐Si (e‐a‐Si) found in the handbooks as ϵ for a‐Si. If we use this ϵ to evaluate SE measurements of ion implanted silicon then the fit is very poor. We deduced the optical band gap of these materials using the Davis–Mott plot based on the relation: (ϵ2E2)1/3 ∼ (E− Eg). The results are: 0.85 eV (i‐a‐Si), 1.12 eV (e‐a‐Si), 1.30 eV (r‐a‐Si). We attribute the optical change to annihilation of point defects

Design and assembly of a catalyst bed gas generator for the catalytic decomposition of high concentration hydrogen peroxide propellants and the catalytic combustion of hydrocarbon/air mixtures

A method for designing and assembling a high performance catalyst bed gas generator for use in decomposing propellants, particularly hydrogen peroxide propellants, for use in target, space, and on-orbit propulsion systems and low-emission terrestrial power and gas generation. The gas generator utilizes a sectioned catalyst bed system, and incorporates a robust, high temperature mixed metal oxide catalyst. The gas generator requires no special preheat apparatus or special sequencing to meet start-up requirements, enabling a fast overall response time. The high performance catalyst bed gas generator system has consistently demonstrated high decomposition efficiency, extremely low decomposition roughness, and long operating life on multiple test articles

Non-destructive characterization of nitrogen-implanted silicon-on-insulator structures by spectroscopic ellipsometry

Silicon-on-insulator (SOI) structures implanted with 200 or 400 keV N+ ions at a dose of 7.5 × 1017cm−2 were studied by spectroscopic ellipsometry (SE). The SE measurements were carried out in the 300–700 nm wavelength (4.13-1.78 eV photon energy) range. The SE data were analysed by the conventional method of using appropriate optical models and linear regression analysis. We applied a seven-layer model (a surface oxide layer, a thick silicon layer, upper two interface layers, a thick nitride layer and lower two interface layers) with good results. The fitted parameters were the layer thickness and compositions. The results were compared with data obtained from Rutherford backscattering spectroscopy (RBS) and transmission electron microscopy. The sensitivity of our optical model and fitting technique was good enough to distinguish between the silicon-rich transition layers near the upper and lower interfaces of the nitride layer, which are unresolvable in RBS measurements

Ion-implantation induced anomalous surface amorphization in silicon

Spectroscopic ellipsometry (SE), high-depth-resolution Rutherford backscattering (RBS) and channeling have been used to examine the surface damage formed by room temperature N and B implantation into silicon. For the analysis of the SE data we used the conventional method of assuming appropriate optical models and fitting the model parameters (layer thicknesses and volume fraction of the amorphous silicon component in the layers) by linear regression. The dependence of the thickness of the surface-damaged silicon layer (beneath the native oxide layer) on the implantation parameters was determined: the higher the dose, the thicker the disordered layer at the surface. The mechanism of the surface amorphization process is explained in relation to the ion beam induced layer-by-layer amorphization. The results demonstrate the applicability of Spectroscopic ellipsometry with a proper optical model. RBS, as an independent cross-checking method supported the constructed optical model

High-temperature catalyst for catalytic combustion and decomposition

A robust, high temperature mixed metal oxide catalyst for propellant composition, including high concentration hydrogen peroxide, and catalytic combustion, including methane air mixtures. The uses include target, space, and on-orbit propulsion systems and low-emission terrestrial power and gas generation. The catalyst system requires no special preheat apparatus or special sequencing to meet start-up requirements, enabling a fast overall response time. Start-up transients of less than 1 second have been demonstrated with catalyst bed and propellant temperatures as low as 50 degrees Fahrenheit. The catalyst system has consistently demonstrated high decomposition effeciency, extremely low decomposition roughness, and long operating life on multiple test particles

Application of a mixed metal oxide catalyst to a metallic substrate

A method for applying a mixed metal oxide catalyst to a metallic substrate for the creation of a robust, high temperature catalyst system for use in decomposing propellants, particularly hydrogen peroxide propellants, for use in propulsion systems. The method begins by forming a prepared substrate material consisting of a metallic inner substrate and a bound layer of a noble metal intermediate. Alternatively, a bound ceramic coating, or frit, may be introduced between the metallic inner substrate and noble metal intermediate when the metallic substrate is oxidation resistant. A high-activity catalyst slurry is applied to the surface of the prepared substrate and dried to remove the organic solvent. The catalyst layer is then heat treated to bind the catalyst layer to the surface. The bound catalyst layer is then activated using an activation treatment and calcinations to form the high-activity catalyst system

Comparative investigation of damage induced by diatomic and monoatomic ion implantation in silicon

The damaging effect of mono- and diatomic phosphorus and arsenic ions implanted into silicon was investigated by spectroscopic ellipsometry (SE) and high-depth-resolution Rutherford backscattering and channeling techniques. A comparison was made between the two methods to check the capability of ellipsometry to examine the damage formed by room temperature implantation into silicon. For the analysis of the spectroscopic ellipsometry data we used the conventional method of assuming appropriate optical models and fitting the model parameters (layer thicknesses and volume fractions of the amorphous silicon component in the layers) by linear regression. The depth dependence of the damage was determined by both methods. It was revealed that SE can be used to investigate the radiation damage of semiconductors together with appropriate optical model construction which can be supported or independently checked by the channeling method. However, in case of low level damage (consisting mainly of isolated point defects) ellipsometry can give false results, overestimating the damage using inappropriate dielectric functions. In that case checking by other methods like channeling is desirable

Expression of human milk fat globulin proteins in cells of haemopoietic origin

Lineage-specific gene expression has been used for the identification of metastasis of cancers with unknown primary site or of disseminated cancer cells in haemopoietic compartments such as bone marrow or in lymph nodes. For the muc1, cytokeratin-19 and the CEA genes, the transcription in haemopoietic cells has been shown recently. Here, the expression of the mammary epithelium related antigens BA46 (lactadherin) and BA70 in lymphoid and myeloid cell lines, and in clinical specimens is analysed. By Northern-hybridization with specific oligonucleotides an ubiquitous transcription of both genes, independent from the provenance of cells or the chromosomal gender was found. Both mRNA molecules were amplified by rtPCR from the samples and the specificity could be confirmed by sequence analysis. Peptide-specific antibodies were raised in rabbits and used for Western-blot analysis and for immunocytochemical studies. Both antibodies reacted with total cell lysates from myeloid and lymphatic cells. In immunocytochemistry antibody P717 (anti-lactadherin) had a significant strong staining of the myeloid cell lines K562 and HL60 suggesting a participation of lactadherin in leukocyte-function. Using antibody P718, strong stains were seen in myeloid line K562 and lymphoid line ST486. In conclusion, our findings expand the results that the concept of lineage-specific gene expression is no longer valid at the molecular level. © 2000 Cancer Research Campaig

Inner approximated reachability analysis

International audienceComputing a tight inner approximation of the range of a function over some set is notoriously di cult, way beyond obtaining outer approximations. We propose here a new method to compute a tight inner approximation of the set of reachable states of non-linear dynamical systems on a bounded time interval. This approach involves a ne forms and Kaucher arithmetic, plus a number of extra ingredients from set-based methods. An implementation of the method is discussed, and illustrated on representative numerical schemes, discrete-time and continuous-time dynamical systems